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4GBU02F

4GBU02F

  • 厂商:

    IRF

  • 封装:

  • 描述:

    4GBU02F - 4.0 Amps Single Phase Full Wave - International Rectifier

  • 数据手册
  • 价格&库存
4GBU02F 数据手册
PART OBSOLETE - EOL18 Bulletin I2717 rev. G 05/02 4GBU Series 4.0 Amps Single Phase Full Wave Features Diode chips are glass passivated Suitable for Universal hole mounting Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 V RMS) Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260°C for 8-10 secs UL E160375 approved Bridge Rectifier IO(AV) = 4A VRRM = 50/ 800V Description These GBU Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment. Major Ratings and Characteristics Parameters IO @ TC IFSM @ 50Hz @ 60Hz It 2 4GBU 4 100 150 158 113 104 50 to 800 - 55 to 150 Units A °C A A A2s A2s V o @ 50Hz @ 60Hz 4GBU VRRM TJ range C www.irf.com 1 4GBU Series Bulletin I2717 rev. G 05/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code VRRM , max repetitive peak rev. voltage TJ = TJ max. V 50 100 200 400 600 800 VRMS , max RMS voltage TJ = TJ max. V 35 70 140 280 420 560 IRRM max. @ rated VRRM TJ = 25°C µA 5 5 5 5 5 5 IRRM max. @ rated VRRM TJ = 150°C µA 400 400 400 400 400 400 4GBU 4GBU...F 005 01 02 04 06 08 Forward Conduction Parameters IO IFSM Maximum DC output current Maximum peak, one-cycle non-repetitive surge current, following any rated load condition and with rated VRRM reapplied I2t VFM IRM VRRM Maximum I 2t for fusing, initial TJ = TJ max Maximum peak forward voltage per diode Typical peak reverse leakage curren t per diode Maximum repetitive peak reverse voltage range 50 to 800 V 5 µA TJ = 25 oC, 100% VRRM 113 104 1.0 V A2s t = 10ms t = 8.3ms TJ = 25 oC, IFM = 4A 158 t = 8.3ms TJ = 150°C 4GBU 4 3.2 150 Unit A Conditions TC = 100°C, Resistive & inductive load TC = 100°C, Capacitive load t = 10ms Thermal and Mechanical Specifications Parameters TJ Tstg RthJC RthJA W T Operating and storage temperature range Max. thermal resistance junction to case Thermal resistance, junction to ambient Approximate weight Mounting Torque 4 (0.14) 1.0 9.0 g (oz) Nm Lb.in Bridge to Heatsink 22 °C/ W DC rated current through bridge (1) 4.2 °C/ W DC rated current through bridge (1) 4GBU -55 to 150 Unit o Conditions C Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum heat transfer and bolt down using 3mm screw 2 www.irf.com 4GBU Series Bulletin I2717 rev. G 05/02 Ordering Information Table Device Code 4 1 1 2 3 4 - GBU 2 08 3 F 4 Bridge current Basic Part Number Voltage Code: code x 100 = VRRM Lead Forming: 7.5 mm Outline Table Add suffix "F" for 7.5 mm equal space lead forming All dimensions are in millimetres www.irf.com 3 4GBU Series Bulletin I2717 rev. G 05/02 Maximum Allowable Case Temperature (°C) 160 150 140 130 120 110 100 90 0 1 2 3 4 5 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 1000 4GBU Series Instantaneous Forward Current (A) 100 180˚ (Rect) 180˚ (Sine) 10 T J = 25˚C T J = 150˚C 1 4GBU Series 0.1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Maximum Average Forward Power Loss (W) Peak Half Sine Wave Forward Current (A) 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Average Forward Current (A) Fig. 3 - Total Power Loss Characteristics 160 140 120 100 80 60 40 1 180˚ (Sine) 180˚ (Rect) At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4GBU Series T J = 150˚C 4GBU Series 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current 4 www.irf.com 4GBU Series Bulletin I2717 rev. G 05/02 Data and specifications subject to change without notice. This product has been designed and qualified for Multiple Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/02 www.irf.com 5
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