50MT060ULS

I27123 rev. C 02/03 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved ( file E78996 ) VCES = 600V IC = 100A, TC = 25°C Benefits • Optimized for Welding, UPS and SMPS Applications • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode • Low EMI, requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters VCES IC ICM ILM IF IFM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation Diode IGBT @ T C = 25°C @ TC = 100°C @ T C = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 122°C Max 600 100 50 200 200 48 200 ± 20 2500 445 175 205 83 Units V A V W www.irf.com 1 50MT060ULS I27123 rev. C 02/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.69 1.96 1.88 3 600 - 13 22 29 0.25 6 1.64 1.82 1.56 1.74 ± 250 2.31 2.55 2.24 6 V V GE = 0 V, IC = 2 50µA = 1 5V, IC = 5 0A = 1 5V, IC = 1 00A = 1 5V, I C = 1 00A, TJ = 1 50°C 0 .5mA 2 00µA = VGE , IC = 5 00µA V GE V GE V GE IC = IR = mV/°C V CE S mA V nA V GE(th) B VR ∆ V GE(th)/ ∆T J g fe I CES V FM I GES Gate Threshold Voltage Diode Reverse Breakdown Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Collector-to-Emiter Leaking Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V CE = 5 0V, I C = 1 00A V GE = 0 V, VCE = 6 00V V GE = 0 V, VCE = 6 00V, TJ = 1 50°C I F = 1 00A, VGE = 0 V I F = 1 00A, V GE = 0 V, T J = 1 50°C V GE = ± 2 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres Ct trr Irr Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Junction Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Min Typ Max Units Test Conditions 370 64 163 0.7 1.7 2.4 1.1 2.5 3.6 555 96 245 1.2 2.6 3.8 1.7 3.8 5.5 nC IC = 100A VCC = 480V VGE = 15V IC = 50A, VCC = 480V, VGE = 15V, Rg = 5Ω Energy losses include tail and diode reverse recovery mJ mJ IC = 50A, VCC = 480V, VGE = 15V Rg = 5Ω, T J = 1 25°C Energy losses include tail and diode reverse recovery 9800 14700 602 121 118 99 6.5 320 236 903 182 177 150 9.8 735 pF VGE = 0V VCC = 30V f = 1.0 MHz Vr = 600V, f = 1.0 MHz VCC = 480V, IC = 50A di/dt = 200A/µs ns A Qrr Diode Recovery Charge di(rec)M/dt Diode PeakRate of Fall of Recovery During tb nC Rg = 5Ω A/µs 2 www.irf.com 50MT060ULS I27123 rev. C 02/03 Thermistor Specifications (50MT060ULST only) Parameters R0 β (1) (1) (2) Min Typ 30 4000 R0 = exp R1 Max Units Test Conditions kΩ K T0 = 25°C T0 = 25°C T1 = 85°C Resistance Sensitivity index of the thermistor material (2) (1) T0,T1 are thermistor's temperatures [β(1 T 0 1 , Temperatures in kelvin T1 )] Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS T Wt Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Mounting torque to heatsink Weight compound. Lubricated threads Min - 40 - 40 IGBT Diode Module (3) Typ Max 150 125 Units °C °C/ W 0.18 0.4 0.06 3 ± 10% 66 0.28 0.6 (Heatsink Compound Thermal Conductivity = 1 W/mK) Nm g (3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the 100 75 Duty cycle : 50% Tj = 125°C Tsink = 90°C Power Dissipation = 92W Load Current ( A ) 50 25 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) www.irf.com 3 50MT060ULS I27123 rev. C 02/03 100 1000.0 IC , Collector-to-Emitter Current (Α ) IC , Collector-to-Emitter Current (A) TJ = 150C T J = 150°C 100.0 TJ = 25C 10 T J = 25°C 10.0 Vge = 15V 380µs Pulse Width 1 0.6 1.0 1.4 1.8 2.2 VCC = 50V 20µs PULSE WIDTH 1.0 5.0 5.5 6.0 6.5 VCE , C ollector-to-Em itter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 120 2 IC Maximum DC Collector Current (A) VCE , Collector-to Emitter Voltage (V) 100 80 60 40 20 0 25 50 75 100 125 150 TC Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature IC = 100A 1.75 IC = 50A 1.5 1.25 IC = 25A 1 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 4 www.irf.com 50MT060ULS I27123 rev. C 02/03 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.01 0.05 0.01 0.02 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τC τ τ3 Ri (°C/W) 0.060 0.130 0.100 τi (sec) 0.000968 0.019621 0.051755 0.001 τ1 τ2 τ3 Ci= τi/ Ri Ci= i /Ri 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.01 0.02 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τC τ τ3 Ri (°C/W) 0.200 0.296 0.102 τi (sec) 0.000993 0.038934 0.52648 τ1 τ2 τ3 0.001 Ci= τi/ Ri Ci= i /Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 5 50MT060ULS I27123 rev. C 02/03 20.0 14000 12000 VGE , Gate-to-Emitter Voltage (V) Cies VGE = 0V, f = 1 MHZ C = C +C , C SHORTED ies ge gc ce C =C res gc C =C +C oes ce gc IC= 100A VCE = 480V 16.0 C, Capacitance (pF) 10000 8000 12.0 Coes 6000 4000 2000 0 1 10 100 1000 8.0 4.0 Cres 0.0 0 100 200 300 400 VDS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.0 VCC = 480V VGE = 15V TJ = 25°C I C = 100A 3.0 100 RG = 5.0 Ω VGE = 15V VCC = 480V 10 I C = 100A I C = 50A 2.0 Total Switching Losses (mJ) 4.0 EOFF Switching Losses (mJ) I C = 25A 1 EON 1.0 0.0 0 10 20 30 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( Ω ) T J , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 6 www.irf.com 50MT060ULS I27123 rev. C 02/03 1000 12 10 IC, Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 5.0Ω TJ = 125°C VGE = 15V VCC = 480V VGE = 20V T J = 125° 8 100 6 4 10 2 SAFE OPERATING AREA 0 20 40 60 80 100 1 1 10 100 1000 IC, Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 Instantaneous Forward Current - I F ( A ) 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - VF ( V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.irf.com 7 50MT060ULS I27123 rev. C 02/03 320 40 VR = 480V TJ = 125°C TJ = 25°C 30 240 280 t rr - (ns) 200 IRRM - (A) IF = 100A IF = 50A IF = 25A IF = 100A IF = 50A IF = 25A 20 160 120 10 80 VR = 480V TJ = 125°C TJ = 25°C 40 100 200 300 400 500 600 0 100 200 300 400 500 600 dif / dt - (A / µs) dif / dt - (A / µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 2000 10000 1600 IF = 1 00A IF = 5 0A IF = 2 5A VR = 480V TJ = 125°C TJ = 25°C IF = 100A IF = 50A IF = 25A 1200 di(rec)M/dt - (A/µs) VR = 480V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 Q rr - (nC) 1000 800 400 0 100 100 200 300 400 500 600 dif / dt - (A / µs) dif / dt - (A / µs) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 8 www.irf.com 50MT060ULS I27123 rev. C 02/03 Outline Table Circuit Diagram Resistance in ohms Dimensions in millimetres Note: unused terminals are not assembled in the package www.irf.com 9 50MT060ULS I27123 rev. C 02/03 Ordering Information Table Device Code 50 1 MT 060 2 3 U 4 LS 5 6 1 2 3 4 5 6 - Current rating Voltage code Speed/ Type Special Option (50 = 50A) (060 = 600V) (U = Ultra Fast IGBT) Essential Part Number Circuit Configuration (LS = Low Side Chopper) Empty = no special option T = Thermistor Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 10 www.irf.com