50RIA60S90M

Bulletin I2401 rev. A 07/00 50RIA SERIES MEDIUM POWER THYRISTORS Features High current rating Excellent dynamic characteristics dv/dt = 1000V/µs option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM / V RRM Stud Version 50 A Typical Applications Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 10 to 120 50 94 80 50RIA 140 to 160 50 90 80 1200 1257 7.21 6.58 1400 to 1600 110 Units A °C A A A KA2s KA2s V µs °C @ 50Hz @ 60Hz 1430 1490 10.18 9.30 100 to 1200 It @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical - 40 to 125 Case Style TO-208AC (TO-65) www.irf.com 1 5 0RIA Series Bulletin I2401 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 10 20 40 60 50RIA 80 100 120 140 160 V DRM /V RRM , max. repetitive peak and off-state voltage (1) V 100 200 400 600 800 1000 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage (2) V 150 300 500 700 900 1100 1300 1500 1700 I DRM /I RRM m ax. @ TJ = TJ max. mA 15 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp ≤ 5ms On-state Conduction Parameter IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current 50RIA 10 to 120 50 94 80 1430 1490 1200 1255 140 to 160 50 90 80 1200 1257 1010 1057 7.21 6.58 5.10 4.65 72.1 1.02 1.17 4.78 3.97 1.78 Units A °C A A Conditions 180° sinusoidal conduction t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. I2t Maximum I2t for fusing 10.18 9.30 7.20 6.56 KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms I2√t VT(TO)1 Maximum I2√t for fusing Low level value of threshold voltage 101.8 0.94 1.08 4.08 3.34 1.60 200 400 KA2√s V t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max. VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Latching current mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max. V mA Ipk= 157 A, TJ = 25°C TJ = 25°C. Anode supply 22V, resistive load, Initial IT = 2A Anode supply 6V, resistive load 2 www.irf.com 5 0RIA Series Bulletin I2401 rev. A 07/00 Switching Parameter di/dt Max. rate of rise of turned-on current VDRM ≤ 600V VDRM ≤ 1600V td tq Typical delay time 200 100 0.9 µs Typical turn-off time 110 A/µs 50RIA Units Conditions TC = 125°C, VDM = rated VDRM Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max. ITM = (2x rated di/dt) A TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15Ω source, tp = 20µs TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs dir/dt = -10A/µs, VR=50V Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 50RIA 200 500 (*) Units Conditions V/µs TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90. Triggering Parameter PGM IGM +VGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger 10 250 100 50 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.5 2.5 5.0 0.2 V mA V mA TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C Max. gate current/ voltage not to TJ = TJ max VDRM = rated voltage trigger is the max. value which will not trigger any unit with rated TJ = TJ max VDRM anode-to-cathode applied 20 V 50RIA 10 2.5 2.5 Units Conditions W A TJ = TJ max, t p ≤ 5 ms Max. required gate trigger current/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied www.irf.com 3 5 0RIA Series Bulletin I2401 rev. A 07/00 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 50RIA - 40 to 125 - 40 to 125 0.35 Units Conditions °C °C K/W DC operation RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque Min. Max. wt Approximate weight Case style 0.25 K/W Mounting surface, smooth, flat and greased 2.8 (25) 3.4 (30) 28 (1.0) Nm (lbf-in) g (oz) Non-lubricated threads TO-208AC (TO-65) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction Units 0.078 0.094 0.120 0.176 0.294 0.057 0.098 0.130 0.183 0.296 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 50 1 RIA 160 S90 2 3 4 M 5 1 2 3 4 - Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection) 5 - None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M = Stud base TO-208AC (TO-65) M6 X 1 4 www.irf.com 5 0RIA Series Bulletin I2401 rev. A 07/00 Outline Table Case Style TO-208AC (TO-65) All dimensions in millimeters (inches) Maximum Allowable Case Temperature (°C) 50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W Maximum Allowable Case Temperature (°C) 130 130 50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W 120 Conduction Angle 120 110 Conduction Period 110 30° 100 60° 100 90° 120° 180° 90 30° 80 0 10 20 60° 90° 120° 40 180° 60 DC 70 80 90 0 10 20 30 40 50 60 30 50 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 5 5 0RIA Series Bulletin Maximum Average On-state Power Loss (W) 80 70 60 50 40 30 Conduction Angle I2401 rev. A 07/00 180° 120° 90° 60° 30° RMS Limit Maximum Average On-state Power Loss (W) 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 20 10 0 0 10 20 50RIA Series (100V to 1200V) T = 125°C J 30 40 50 50RIA Series (100V to 1200V) T = 125°C J 50 60 70 80 Average On-state Current (A) Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1300 Peak Half Sine Wave On-state Current (A) 1200 1100 1000 900 800 700 600 50RIA Series (100V to 1200V) 1 10 100 Fig. 4 - On-state Power Loss Characteristics 1500 Peak Half Sine Wave On-state Current (A) 1400 1300 1200 1100 1000 900 800 700 600 500 0.01 50RIA Series (100V to 1200V) 0.1 Pulse Train Duration (s) 1 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated V RRM Reapplied Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 130 Fig. 6 - Maximum Non-Repetitive Surge Current 130 50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W 120 120 110 30° Conduction Angle 110 Conduction Period 100 60° 90° 120° 100 180° 90 90 30° 80 0 90° 60° 120° 180° DC 80 0 5 10 15 20 25 30 35 40 45 50 55 Average On-state Current (A) 10 20 30 40 50 60 70 80 90 Average On-state Current (A) Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics 6 www.irf.com 5 0RIA Series Bulletin I2401 rev. A 07/00 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 90 80 70 60 50 40 30 20 10 0 0 5 Conduction Angle 120 110 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 180° 120° 90° 60° 30° RMS Limit 50RIA Series (1400V to 1600V) T = 125°C J 10 15 20 25 30 35 40 45 50 Average On-state Current (A) 50RIA Series (1400V to 1600V) T = 125°C J 50 60 70 80 Average On-state Current (A) Fig. 9 - On-state Power Loss Characteristics 1100 Peak Half Sine Wave On-state Current (A) 1000 900 800 700 600 500 Fig. 10 - On-state Power Loss Characteristics 1200 Peak Half Sine Wave On-state Current (A) 1100 1000 900 800 700 600 500 50RIA Series (1400V to 1600V) 0.1 Pulse Train Duration (s) 1 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C J No Voltage Reapplied Rated V RRMReapplied 50RIA Series (1400V to 1600V) 1 10 100 400 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 11 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) Instantaneous On-state Current (A) Fig. 12 - Maximum Non-Repetitive Surge Current 1000 100 100 T = 25°C J 10 T = 125°C J T = 25°C J 10 T = 125°C J 50RIA Series (100V to 1200V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 50RIA Series (1400V to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics www.irf.com 7 5 0RIA Series Bulletin I2401 rev. A 07/00 Transient Thermal Impedance ZthJ-hs (K/W) 1 Steady State Value RthJ-hs = 0.35 K/W 0.1 50RIA Series 0.01 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 15 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr