60APU02

Bulletin PD-21079 08/05 60EPU02PbF 60APU02PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free ("PbF" suffix) Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. trr = 35ns IF(AV) = 60Amp VR = 200V Absolute Maximum Ratings Parameters VR IF(AV) IFSM IFRM TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 127°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures Max 200 60 800 120 - 55 to 175 Units V A °C Square Wave, 20kHz Case Styles 60EPU02PbF 60APU02PbF BASE COMMON CATHODE 2 BASE COMMON CATHODE 2 1 CATHODE 3 ANODE ANODE 1 ANODE 3 TO-247AC (Modified) www.irf.com TO-247AC 1 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage Min Typ Max Units Test Conditions 200 V V V µA mA pF nH IR = 100µA IF = 60A IF = 60A, TJ = 175°C VR = V R Rated TJ = 150°C, VR = V R Rated VR = 200V Measured lead to lead 5mm from package body 0.98 1.08 0.81 0.88 87 8.0 50 2 - IR Reverse Leakage Current - CT LS Junction Capacitance Series Inductance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters t rr Reverse Recovery Time Min Typ Max Units Test Conditions 28 50 4 8 59 220 35 nC A ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 60A VR = 160V diF /dt = 200A/µs IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.2 5.5 0.2 T Mounting Torque Marking Device Mounting Surface, Flat, Smooth and Greased Min Typ Max 0.70 Units K/W g (oz) 1.2 N*m 60EPU02, 60APU02 2 www.irf.com 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 1000 Reverse Current - I R (µA) 1000 100 T J = 175˚C 125˚C 10 1 0.1 0.01 0.001 0 50 100 150 200 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 25˚C Instantaneous Forward Current - I F (A) 100 T = 175˚C J J J T = 125˚C T = 25˚C 10000 10 Junction Capacitance - C T (pF) T J = 25˚C 1000 100 1 0 0.5 1 1.5 2 2.5 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Thermal Impedance Z thJC PDM 0.1 t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc Single Pulse (Thermal Resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 180 Allowable Case Temperature (°C) Average Power Loss ( Watts ) 100 RMS Limit 170 160 150 140 130 120 110 100 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Square wave (D = 0.50) 80% Rated Vr applied 80 60 40 20 0 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) DC D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC see note (3) Fig. 6 - Forward Power Loss Characteristics 70 IF = 90A IF = 60A IF = 30A 800 700 600 500 Qrr ( nC ) Vr = 160V Tj = 125˚C Tj = 25˚C 60 50 trr ( ns ) IF = 90A IF = 60A IF = 30A 40 400 300 30 200 20 Vr = 160V Tj = 125˚C Tj = 25˚C 100 0 100 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt 10 100 di F /dt (A/µs ) 1000 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt (3) Formula used: TC = T J - (Pd + PdREV) x R thJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = V R1 x IR (1 - D); IR @ VR1 = 80% rated V R 4 www.irf.com 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST G D IRFP250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 IF 0 trr ta tb Qrr I RRM 4 2 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di fF/dt di /dt 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 I RRM extrapolated to zero current Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 Outline Table 60EPU02PbF 15.90 (0.626) 15.30 (0.602) 5. 70 (0 .22 5) 5.30 ( 0.208) 20.30 (0 .800 ) 19.70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0.17 7) 1 3 (2 PLCS.) 1 3 ANODE BASE COMMON CATHODE 2 3. 65 (0.14 4) 3. 55 (0.13 9) DIA. 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 14. 80 ( 0.583) 14 .20 (0 .559 ) CATHODE 4. 30 (0 .170) 3. 70 (0 .145) 2. 20 (0 .08 7) 2. 40 (0.09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .213) 1. 40 ( 0 .05 6) M AX. 1. 00 (0 .039) 10. 94 ( 0.430) 10 .86 (0 .427 ) Dimensions in millimeters and inches 60APU02PbF BASE COMMON CATHODE 2 15 .90 (0 .626 ) 15 .30 (0 .602 ) 3. 65 (0 .14 4) 3. 55 (0 .13 9) DIA. 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) ANODE 1 ANODE 3 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 3 (2 PLCS.) 14. 80 ( 0.583) 14 .20 (0 .559 ) 4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1. 40 (0 .05 6) 2. 40 (0 .09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3) M AX . 1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 (0 .427 ) 6 www.irf.com 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 Marking Information PART NUMBER EXAMPLE: THIS IS A 60EPU02 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 60EPU02 P035H 56 57 DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H EXAMPLE: THIS IS A 60APU02 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER 60APU02 P035H 56 57 DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H Ordering Information Table Device Code 60 1 1 2 - E 2 P 3 U 4 02 PbF 5 6 Current Rating (60 = 60A) Circuit Configuration: E = Single Diode A = Single Diode, 3 pins 3 4 5 6 - Package: P = TO-247AC (Modified) Type of Silicon: U = UltraFast Recovery Voltage Rating (02 = 200V) none = Standard Production PbF = Lead-Free www.irf.com 7 60EPU02PbF, 60APU02PbF Bulletin PD-21079 08/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 08/05 8 www.irf.com