0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
60APU06

60APU06

  • 厂商:

    IRF

  • 封装:

  • 描述:

    60APU06 - Ultrafast Soft Recovery Diode - International Rectifier

  • 数据手册
  • 价格&库存
60APU06 数据手册
Bulletin PD-21099 11/05 60EPU06PbF 60APU06PbF Ultrafast Soft Recovery Diode Features • Ultrafast Recovery • 175°C Operating Junction Temperature • Lead-Free ("PbF" suffix) Benefits • Reduced RFI and EMI • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. trr = 34ns (typ) IF(AV) = 60Amp VR = 600V Absolute Maximum Ratings Parameters VR IF(AV) IFSM IFRM TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 116°C Single Pulse Forward Current, TC = 25°C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures Max 600 60 600 120 - 55 to 175 Units V A °C Square Wave, 20kHz Case Styles 60EPU06PbF 60APU06PbF CATHODE TO BASE 2 CATHODE TO BASE 2 1 3 1 ANODE 3 ANODE CATHODE ANODE TO-247AC (Modified) www.irf.com TO-247AC 1 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage Min Typ Max Units Test Conditions 600 V V V V µA µA pF IR = 100µA IF = 60A IF = 60A, TJ = 125°C IF = 60A, TJ = 175°C VR = VR Rated TJ = 150°C, VR = VR Rated VR = 600V 1.35 1.68 1.20 1.42 1.11 1.30 39 50 500 - IR Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions 34 81 164 7.4 17.0 300 1394 45 nC A ns IF = 1A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 60A VR = 200V diF /dt = 200A/µs IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.2 5.5 0.2 T Mounting Torque 1.2 10 Marking Device Mounting Surface, Flat, Smooth and Greased Min Typ Max 0.63 Units K/W g (oz) 2.4 20 N*m lbf.in 60EPU06, 60APU06 2 www.irf.com 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 1000 Reverse Current - I R (µA) 1000 Tj = 175˚C 100 125˚C 10 1 0.1 0.01 0.001 25˚C Instantaneous Forward Current - I F (A) 100 T = 175˚C J J J 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 125˚C T = 25˚C Junction Capacitance - C T (pF) 1000 10 T J = 25˚C 100 1 0 0.5 1 1.5 2 2.5 3 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 1 10 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Impedance Z thJC (°C/W) 0.1 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 180 Allowable Case Temperature (°C) Average Power Loss ( Watts ) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC RMS Limit 160 140 120 Square wave (D = 0.50) DC 100 80% Rated Vr applied 80 see note (3) 60 0 20 40 60 80 100 Average Forward Current - IF(AV)(A) Fig. 6 - Forward Power Loss Characteristics Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 3000 2500 2000 Tj = 125°C Tj = 25°C 300 Tj = 125°C Tj = 25°C If = 30A If = 60A 250 Qrr(nC) 1500 1000 500 0 10 If = 30A If = 60A trr (ns) 200 150 100 50 100 1000 10 100 1000 dIf/ dt (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt dIf/ dt (A/µs) Fig.87 - Typical Stored Charge vs. dif/dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F / dif/dtdt ADJUST D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit 3 IF 0 trr ta tb 4 Q rr 2 I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 /dt di fF/dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t x I RRM Q rr = rr 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 Outline Table 60EPU06PbF 15 .90 (0 .626 ) 15 .30 (0 .602 ) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 3 (2 PLCS.) 1 3 ANODE BASE COMMON CATHODE 2 3. 65 (0 .14 4) 3. 55 (0 .13 9) DIA. 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 14. 80 ( 0.583) 14 .20 ( 0 .559 ) CATHODE 4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1. 40 ( 0 .05 6) 2. 40 (0 .09 5) M AX. 0.80 ( 0.032) 0. 40 (0 .21 3) M AX . 1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 (0 .427 ) Dimensions in millimeters and inches 60APU06PbF BASE COMMON CATHODE 2 15 .90 (0 .626 ) 15 .30 (0 .602 ) 3. 65 (0 .14 4) 3. 55 (0 .13 9) DIA. 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 ( 0 .800 ) ANODE 1 ANODE 3 19 .70 ( 0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 3 (2 PLCS.) 14. 80 ( 0.583) 14 .20 ( 0 .559 ) 4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1. 40 (0 .05 6) 2. 40 (0 .09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3) M AX . 1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 (0 .427 ) 6 www.irf.com 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 Marking Information EXAMPLE: THIS IS A 60EPU06 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2003 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER 60EPU06 P335H 56 57 DATE CODE P = LEAD-FREE YEAR 3 = 2003 WEEK 35 LINE H EXAMPLE: THIS IS A 60APU06 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2004 IN ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER 60APU06 P435H 56 57 DATE CODE P = LEAD-FREE YEAR 4 = 2004 WEEK 35 LINE H Ordering Information Table Device Code 60 1 1 2 - E 2 P 3 U 4 06 PbF 5 6 Current Rating (60 = 60A) Circuit Configuration: E = Single Diode A = Single Diode, 3 pins 3 4 5 6 - Package: P = TO-247AC (Modified) Type of Silicon: U = UltraFast Recovery Voltage Rating (06 = 600V) none = Standard Production PbF = Lead-Free www.irf.com 7 60EPU06PbF/ 60APU06PbF Bulletin PD-21099 11/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/05 8 www.irf.com
60APU06 价格&库存

很抱歉,暂时无法提供与“60APU06”相匹配的价格&库存,您可以联系我们找货

免费人工找货