75SLQ030

PD-94068A SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 75SLQ030 75 Amp, 30V Major Ratings and Characteristics Description/Features The 75SLQ030 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. • • • • Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability • Surface Mount • Lightweight Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 75Apk, TJ =125°C 75SLQ030 75 Units A 30 600 0.51 V A V TJ, Tstg Operating and storage -55 to 150 °C CASE STYLE CATHODE ANODE ANODE IR Case Style SMD-1 www.irf.com 1 6/29/01 75SLQ030 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 75SLQ030 30 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 600 A @ tp = 8.3 ms half-sine Limits 75 Units A Conditions 50% duty cycle @ TC = 82°C, square waveform Electrical Specifications Parameters VFM Max. Forward Voltage Drop See Fig. 1Q Limits 0.65 0.82 0.59 0.79 0.51 0.77 Units V V V V V V mA mA mA pF nH @ 75A @ 150A @ 75A @ 150A @ 75A @ 150A TJ = 25°C TJ = 100°C TJ = 125°C Conditions TJ = -55°C TJ = 25°C TJ = 125°C I RM Max. Reverse Leakage Current See Fig. 2Q 1.0 100 300 VR = rated VR CT LS Max. Junction Capacitance Typical Series Inductance 3650 5.9 VR = 5VDC ( 1MHz, 25°C ) Measured from center of cathode pad to center of anode pad Thermal-Mechanical Specifications Parameters TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size (Typical) Case Style 2.6 200X200 SMD-1 g mils Limits Units -55 to 150 -55 to 150 1.1 °C °C °C/W DC operation Conditions RthJC Max. Thermal Resistance, Junction See Fig. 4 Q Pulse Width < 300µs, Duty Cycle < 2% R Pins 2 and 3 externally tied together 2 www.irf.com 75SLQ030 1000 125°C Reverse Current - I R ( mA ) 100 100°C 10 75°C 1000 1 25°C 0.1 0.01 Instantaneous Forward Current - I F (A) 0 10 20 30 100 Reverse Voltage - V (V) R Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 10 Tj = 125°C Tj = 25°C 10000 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V F (V) Junction Capacitance - C T (pF) Tj = -55°C T J = 25°C Fig. 1 - Max. Forward Voltage Drop Characteristics 1000 0 10 20 30 Reverse Voltage -V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 75SLQ030 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1  PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 180 160 Allowable Case Temprature - (°C) 140 120 75SLQ030 R thJC = 1.1°C/W DC 100 80 60 40 20 0 0 20 40 60 80 100 120 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 6/01 4 www.irf.com