81RIA80

Bulletin I25201 rev. B 03/03 80RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features Hermetic glass-metal seal International standard case TO-209AC (TO-94) 80A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 80RIA 80 85 125 1900 1990 18 16 400 to 1200 110 - 40 to 125 Unit A °C A A A KA2s KA2s V µs °C case style TO-209AC (TO-94) www.irf.com 1 8 0RIA Series Bulletin I25201 rev. B 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 40 80RIA 80 120 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 I DRM/I RRM m ax. @ TJ = 125°C mA 15 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current 80RIA 80 85 125 1900 1990 1600 1675 Units A °C A Conditions 180° conduction, half sine wave DC @ 75°C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. A t = 8.3ms t = 10ms t = 8.3ms t = 10ms I2t Maximum I2t for fusing 18 16 12.7 11.7 KA2 s t = 8.3ms t = 10ms t = 8.3ms I 2√ t Maximum I2√t for fusing 180.5 0.99 KA2√s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 1.13 (I > π x IT(AV)),TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. mΩ 1.84 1.60 200 400 mA T J = 2 5°C, anode supply 12V resistive load V (I > π x IT(AV)),TJ = TJ max. Ipk= 250A, TJ = 25°C tp = 10ms sine pulse 2.29 2 www.irf.com 8 0RIA Series Bulletin I25201 rev. B 03/03 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current 300 A/µs 80RIA Units Conditions TJ = 125°C, Vd = rated VDRM, ITM = 2xdi/dt snubber Per JEDEC Standard RS-397, 5.2.2.6. 0.2µF, 15Ω, Gate pulse: 20V, 65Ω, tp = 6µs, tr= 0.5µs td tq Typical delay time 1 µs Gate pulse: 10V, 15Ω source, tp = 6µs, tr = 0.1µs, Vd = rated VDRM, ITM = 50Adc, TJ = 25°C. dv/dt = 20V/µs, Gate bias: 0V 25Ω, tp = 500µs ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V, Typical turn-off time 110 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 80RIA 500 15 Units V/µs mA Conditions TJ = 125°C exponential to 67% rated VDRM TJ = 125°C rated V DRM /V RRM applied Triggering Parameter PGM Maximum peak gate power 80RIA 12 3 3 20 Units W A Conditions TJ = TJ max, t p ≤ 5 ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p ≤ 5 ms PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage IGT Max. DC gate current required to trigger V 10 270 120 60 mA TJ = TJ max, tp ≤ 5ms TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C V TJ = 25°C TJ = 125°C mA TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 6V anode-to-cathode applied VGT Max. DC gate voltage required to trigger 3.5 2.5 1.5 IGD VGD DC gate current not to trigger 6 DC gate voltage not to trigger 0.25 V www.irf.com 3 8 0RIA Series Bulletin I25201 rev. B 03/03 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 80RIA -40 to 125 -40 to 150 0.30 Units °C Conditions RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% DC operation K/W 0.1 15.5 (137) 14 (120) Nm (lbf-in) g Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads wt Approximate weight Case style 130 TO-209AC(TO-94) See Outline Table ∆RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction Units 0.042 0.050 0.064 0.095 0.164 0.030 0.052 0.070 0.100 0.165 K/W Conditions T J = T J m ax. Ordering Information Table Device Code 8 1 0 2 RIA 120 3 4 1 2 - ITAV x 10A 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 3 4 5 - RIA = Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base 1/2"-20UNF- 2A threads NOTE: For Metric Device M12 x 1.75 E6 Contact factory 4 www.irf.com 8 0RIA Series Bulletin I25201 rev. B 03/03 Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. 8.5 (0.3) DIA. 4.3 (0.17) DIA. 37 )M IN. ( 0. 9 .5 2.5 (0.10) MAX. C.S. 16mm 2 (.025 s.i.) RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 20 (0 . FLEXIBLE LEAD 79 )M IN. Fast-on Terminals AMP. 280000-1 REF-250 55 (2.17) MIN. 215 (8.46) RED SHRINK WHITE SHRINK 24 (0.94) MAX. 10 (0.39) 10 (0.39) MAX. 23.5 (0.92) MAX. DIA. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A * 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) * FOR METRIC DEVICE: M12 X 1.75 E6 CONTACT FACTORY Maximum Allowable Case T emperature (°C) 130 80RIA S eries RthJC (DC) = 0.30 K/ W 120 Maximum Allowable Case T emperature (°C) 130 120 110 80RIA S eries RthJC (DC) = 0.30 K/ W 110 Conduc tion Angle Conduction Period 100 90 30° 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 100 30° 60° 90° 120° 180° 90 60° 90° 120° 180° DC 80 0 10 20 30 40 50 60 70 80 90 Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com 5 8 0RIA Series Bulletin I25201 rev. B 03/03 Maximum Average On-s tate Power Loss (W) 120 hS Rt 110 100 90 80 70 60 50 180° 120° 90° 60° 30° RMSLimit 6 0. W K/ A = W K/ 0.4 1 K/ W -D elt a 1.4 K/ W 2K /W R 40 30 20 Conduction Angle 3 K/ W 10 0 0 10 20 30 40 80RIA S eries T = 125°C J 50 60 70 80 0 5 K/ W 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Los (W) s 180 160 140 120 100 80 60 40 20 0 DC 180° 120° 90° 60° 30° R th S A = 0. 6 0. 4 K/ W K/ W -D el ta 1K /W R RMSLimit Conduc tion Period 1.4 K/ W 2 K/ W 3 K/ W 80RIA S eries T = 125°C J 0 20 40 60 80 100 120 5 K/ W 140 0 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (°C) Fig. 4 - On-state Power Loss Characteristics Peak Half S Wave On-s ine tate Current (A) 1600 At Any R ated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 125°C J @60 Hz 0.0083 s @50 Hz 0.0100 s 1400 Peak Half S Wave On-state Current (A) ine 1800 2000 Maximum Non Repetitive S urge Current 1900 Versus Pulse T rain Duration. Control 1800 Of Conduction May Not Be Maintained. Initial T = 125°C 1700 J No Voltage Reapplied 1600 Rated VRRM Reapplied 1500 1400 1300 1200 1100 1000 900 80RIA S eries 800 700 0.01 1200 1000 80R S IA eries 800 1 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) 0.1 1 Puls T e rain Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6 www.irf.com 8 0RIA Series Bulletin I25201 rev. B 03/03 10000 Instantaneous On-state Current (A) 1000 100 T = 25°C J T = 125°C J 10 80R S IA eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 1 S teady S tate Value R thJC = 0.30 K/ W (DC Operation) 0.1 T ransient T hermal Impedance Z thJC (K/ W) 0.01 80RIA S eries 0.001 0.0001 0.001 0.01 0.1 1 10 S uare Wave Pulse Duration (s) q Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) R ecommended load line for rated di/ dt : 20V, 30ohms; tr