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94MTKB

94MTKB

  • 厂商:

    IRF

  • 封装:

  • 描述:

    94MTKB - THREE PHASE AC SWITCH - International Rectifier

  • 数据手册
  • 价格&库存
94MTKB 数据手册
Bulletin I27504 08/97 MT..KB SERIES THREE PHASE AC SWITCH Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio 4000 VRMS isolating voltage UL E78996 approved 50 A 90 A 100 A Description A range of extremely compact, encapsulated three phase AC-switches offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications as control motor starter. Major Ratings and Characteristics Parameters IO @ TC I FSM @ 50Hz @ 60Hz It 2 54MT.KB 94MT.KB 104MT.KB Units 50 80 390 410 770 700 7700 90 80 950 1000 4525 4130 45250 800 to 1600 - 40 to 125 - 40 to 125 100 80 1130 1180 6380 5830 63800 A °C A A A2s A2s A2√s V °C °C @ 50Hz @ 60Hz I2√ t VRRM range TSTG range TJ range www.irf.com 1 54-94-104MT..KB Series Bulletin I27504 08/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code VRRM, maximum repetitive peak reverse voltage V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 VRSM, maximum non-repetitive peak reverse voltage V 900 1100 1300 1500 1700 900 1100 1300 1500 1700 VDRM, max. repetitive peak off-state voltage, gate open circuit V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 IRRM /IDRMmax. @ TJ = 125°C mA 80 100 54MT..KB 120 140 160 80 100 94/104MT..KB 120 140 160 * For single AC switch 20 * 40 * Forward Conduction Parameter IO ITSM Maximum IRMS output current @ Case temperature Maximum peak, one-cycle forward, non-repetitive on state surge current 54MT.KB 94MT.KB 104MT.KB Units Conditions 50 80 390 410 330 345 90 80 950 1000 800 840 4525 4130 3200 2920 45250 0.99 100 80 1130 1180 950 1000 6380 5830 4510 4120 63800 0.99 A 2√s V As 2 A °C A For all conduction angle t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% V RRM reapplied No voltage reapplied 100% V RRM reapplied Initial TJ = TJ max. It 2 Maximum I t for fusing 2 770 700 540 500 I2 √ t Maximum I2√ t for fusing 7700 1.16 t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. (I > π x I T(AV)), @ T J max. VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage rt1 rt2 VTM di/dt Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop 1.44 1.19 1.15 mΩ 12.54 4.16 3.90 (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. (I > π x I T(AV)), @ T J max. 11.00 3.56 3.48 2.68 1.55 1.53 V Ipk = 150A, TJ = 25°C tp = 400µs single junction TJ = 25oC, from 0.67 VDRM , ITM = π x I T(AV), Ig = 500mA,tr < 0.5 µs, t p > 6 µs TJ = 25o C, anode supply = 6V, Max. non-repetitive rate of rise of turned on current 150 A/µs IH IL Max. holding current 200 mA resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load Max. latching current 400 2 www.irf.com 54-94-104MT..KB Series Bulletin I27504 08/97 Blocking Parameter VINS RMS isolation voltage 54MT.KB 94MT.KB 104MT.KB Units Conditions 4000 500 V V/µs TJ = 25 oC all terminal shorted f = 50Hz, t = 1s TJ = TJ max., linear to 0.67 VDRM, gate open circuit dv/dt Max. critical rate of rise of off-state voltage (*) (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 104MT160KBS90. Triggering Parameter PGM Max. peak gate power 54MT.KB 94MT.KB 104MT.KB Units Conditions 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 mA V A V V TJ = - 40°C Anode supply = 6V, resistive load TJ = 25°C TJ = 125°C TJ = - 40°C Anode supply = 6V, resistive load TJ = 25°C TJ = 125°C @ TJ = TJ max., rated VDRM applied W TJ = TJ max. PG(AV) Max. average gate power IGM -V GT VGT Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger 6 mA Thermal and Mechanical Specifications Parameter TJ Tstg Max. junction operating temperature range Max. storage temperature range RthJC Max. thermal resistance, junction to case 0.52 1.05 0.56 1.12 RthCS Max. thermal resistance, case to heatsink T Mounting torque ± 10% wt to heatsink to terminal 4 to 6 3 to 4 225 g Nm 0.39 0.77 0.40 0.80 0.03 0.34 0.69 0.36 0.72 K/W K/W DC operation per single AC switch DC operation per junction 180° Sine cond. angle per single AC switch 180° Sine cond. angle per junction Per module Mounting surface smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 54MT.KB 94MT.KB 104MT.KB Units Conditions -40 to 125 °C -40 to 125 °C Approximate weight www.irf.com 3 54-94-104MT..KB Series Bulletin I27504 08/97 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices 54MT.KB 94MT.KB 104MT.KB Sinusoidal conduction @ TJ max. 180o 0.072 0.033 0.027 120o 0.085 0.039 0.033 90o 0.108 0.051 0.042 60o 0.152 0.069 0.057 30o 0.233 0.099 0.081 180o 0.055 0.027 0.023 Rectangular conduction @ TJ max. 120o 0.091 0.044 0.037 90o 0.117 0.055 0.046 60o 0.157 0.071 0.059 30o 0.236 0.100 0.082 Units K/W Ordering Information Table Device Code 10 1 4 2 MT 3 160 4 K B 5 S90 6 1 - Current rating code: 5 = 50 A (Avg) 9 = 90 A (Avg) 10 = 100 A (Avg) 2 3 4 5 6 - AC Switch Essential part number Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) Generation II Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com 54-94-104MT..KB Series Bulletin I27504 08/97 Outline Table (with optional barriers) All dimensions in millimeters (inches) Outline Table (without optional barriers) All dimensions in millimeters (inches) www.irf.com 5 Optional Hardware MT..KB Series GATE LEADS Ident No. 6443.2112.AA 6443.2113.AA 6443.2114.AA Device Series 51, 91, 111MT..KB 52, 92, 112MT..KB 53, 93, 113MT ..KB 54, 94, 104MT..KB Description 2 DX connectors with yellow and white leads 1 SX + 1 DX connectors with yellow and white leads 1 SX + 2 DX connectors with yellow and white leads All dimensions are in millimeters (inches) BARRIERS Ident No. 6444.0211.AA for all MT..KB Series Barriers Mounting Instructions Coat uniformly the groove on the plastic box with a silicon adhesive. Insert the barriers into the groove on the plastic box. Cure the silicon adhesive according to its technical notes. We suggest the use of DOW CORNING Silastic 744RTV (time curing 30 min. at room temperature). All dimensions are in millimeters (inches) Bulletin I27900 rev. A 12/99 1 5 4-94-104MT..KB Series Bulletin I27504 08/97 Maximum Allowable Case Temperature (°C) 130 120 110 100 90 80 70 60 0 10 20 30 40 50 60 RMS Output Current (A) For all Conduction Angles Per Single AC Switch 1000 Instantaneous On-state Current (A) 54MT..KB Series Device Fully Turned-on T = 25°C J T = 125°C J 100 10 54MT..KB Series Per Junction 1 0 1 2 3 4 5 6 Instantaneous On-state Voltage (V) Fig. 1 - Current Ratings Characteristic 350 300 250 200 150 100 50 0 0 10 20 30 40 50 60 0 Conduction Angle Fig. 2 - Forward Voltage Drop Characteristics Maximum Total Power Loss (W) (Per Total Module) 54MT..KB Series T = 125°C J Device Fully Turned-on R th 180° 120° 90° 60° 30° 1 0. W K/ K /W 0. 3K /W 0. 2 SA = 05 0. W K/ R ta el -D 0.5 K/ W 0.7 K/W 1K /W 2 K/W 25 50 75 100 125 RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 - Total Power Loss Characteristics 350 Peak Half Sine Wave On-state Current (A) 325 300 275 250 225 200 175 150 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 400 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C J No Voltage Reapplied Rated VRRM Reapplied 250 200 54MT..KB Series Per Junction 150 0.01 0.1 Pulse Train Duration (s) 1 54MT..KB Series Per Junction Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 6 www.irf.com 5 4-94-104MT..KB Series Bulletin I27504 08/97 Maximum Allowable Case Temperature (°C) 130 Instantaneous On-state Current (A) 1000 120 110 100 90 80 70 60 50 0 20 40 94MT..KB Series Device Fully Turned-on 100 Per Single AC Switch T = 25°C J 10 T = 125°C J 94MT..KB Series Per Junction 1 0 1 2 3 4 5 For all Conduction Angles 60 80 100 120 RMS Output Current (A) Instantaneous On-state Voltage (V) Fig. 6 - Current Ratings Characteristic 450 400 Maximum Total Power Loss (W) (Per Total Module) 350 300 250 200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 0 RMS Output Current (A) Conduction Angle Fig. 7 - Forward Voltage Drop Characteristics 94MT..KB Series TJ = 125°C Device Fully Turned-on R th 05 0. 180° 120° 90° 60° 30° 0. 15 SA W K/ K /W = /W 3K 0.0 0.3 K/ W a elt -D R 0.5 K/W 0.7 K/W 1 K/W 1.5 K/W 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 8 - Total Power Loss Characteristics 750 Peak Half Sine Wave On-state Current (A) 700 650 600 550 500 450 400 350 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine W ave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 600 500 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated VRRMReapplied 94MT..KB Series Per Junction 94MT..KB Series Per Junction 0.1 Pulse Train Duration (s) 1 300 0.01 Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current www.irf.com 7 5 4-94-104MT..KB Series Bulletin I27504 08/97 Maximum Allowable Case Temperature (°C) 130 120 110 100 90 80 70 60 0 20 40 60 80 100 120 RMS Output Current (A) Per Single AC Switch Instantaneous On-state Current (A) 1000 104MT..KB Series Device Fully Turned-on 100 T = 25°C J 10 T = 125°C J 104MT..KB Series Per Junction 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) For all Conduction Angles Fig. 11 - Current Ratings Characteristic 500 450 Maximum Total Power Loss (W) (Per Total Module) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 0 Conduction An gle Fig. 12 - Forward Voltage Drop Characteristics 104MT..KB Series 180° TJ = 125°C 120° Device Fully 90° Turned-on 60° 30° R th 0.3 K/W 0.5 K/W 0.7 K/W 1 K/W 1.5 K/W 25 RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 13 - Total Power Loss Characteristics 1100 Peak Half Sine W ave On-state Current (A) 1000 900 800 700 600 500 400 1 10 100 Number Of Equal Am plitude Half Cycle Current Pulses (N) W K/ 05 0. /W K SA 15 0. .03 =0 W K/ a elt -D R 50 75 100 125 Peak Half Sine W ave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1200 1100 1000 900 800 700 600 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 104MT..KB Series Per Junction 104MT..KB Series Per Junction 0.1 Pulse Train Duration (s) 1 400 0.01 Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current 8 www.irf.com 5 4-94-104MT..KB Series Bulletin I27504 08/97 10 Transient Therm Impedance ZthJC (K/W al ) Steady State Value R thJC = 1.05 K/W 1 R thJC = 0.77 K/W R thJC = 0.69 K/W (DC Operation) 104MT..KB Series 0.1 94MT..KB Series 54MT..KB Series 0.01 Per Junction 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 16 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) R ectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b) Recommended load line for = 6 µs 10 (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = -40 °C TJ = 25 °C TJ = 125 °C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 54/ 94/ 104MT..KB Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9
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