AUIRF1324S

AUTOMOTIVE GRADE AUIRF1324S AUIRF1324L HEXFET® Power MOSFET D PD - 97483 Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited) G S 24V 1.3mΩ 340A 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G G D S S D G TO-262 AUIRF1324L D2Pak AUIRF1324S D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. 340 240 195 1420 300 2.0 ± 20 270 See Fig. 14, 15, 22a, 22b 0.46 -55 to + 175 300 Units A d Ãd e f d W W/°C V mJ A mJ V/ns °C Thermal Resistance Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted, steady-state) k Parameter Typ. Max. 0.50 40 Units °C/W j ––– ––– HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 03/29/2010 AUIRF1324S/L Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs RG IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 24 ––– ––– 2.0 180 ––– ––– ––– ––– ––– ––– 22 1.3 ––– ––– 2.3 ––– ––– ––– ––– Conditions ––– V VGS = 0V, ID = 250µA ––– mV/°C Reference to 25°C, ID = 5.0mA 1.65 mΩ VGS = 10V, ID = 195A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 195A ––– Ω 20 µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C 250 200 nA VGS = 20V VGS = -20V -200 g d Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Min. Typ. Max. Units 160 84 49 76 17 190 83 120 7590 3440 1960 4700 4490 240 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 195A VDS = 12V VGS = 10V ID = 195A, VDS =0V, VGS = 10V VDD = 16V ID = 195A RG = 2.7Ω VGS = 10V VGS = 0V VDS = 24V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 19V , See Fig. 11 VGS = 0V, VDS = 0V to 19V ––– ––– ––– ––– Turn-On Delay Time ––– Rise Time ––– Turn-Off Delay Time ––– Fall Time ––– Input Capacitance ––– Output Capacitance ––– Reverse Transfer Capacitance ––– Effective Output Capacitance (Energy Related) ––– Effective Output Capacitance (Time Related) ––– g ns g pF Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton i h Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– 350 ––– ™ Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 195A, VGS = 0V VR = 20V, TJ = 25°C IF = 195A TJ = 125°C TJ = 25°C di/dt = 100A/µs TJ = 125°C TJ = 25°C D A A Ãd 1420 Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time ––– ––– 1.3 V ––– 46 ––– ns ––– 71 ––– ––– 160 ––– nC ––– 430 ––– ––– 7.7 ––– A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) g S g Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140). ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.014mH RG = 25 Ω, IAS = 195A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 195A, di/dt ≤ 450A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom‰ Rθ is measured at TJ approximately 90°C. Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com AUIRF1324S/L Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2Pak TO-262 MSL1 N/A Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF1324S/L 10000 ≤60µs PULSE WIDTH Tj = 25°C TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V 10000 ≤60µs PULSE WIDTH Tj = 175°C ID, Drain-to-Source Current (A) TOP ID, Drain-to-Source Current (A) 1000 100 1000 BOTTOM BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V 10 100 1 4.0V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 4.0V 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 2.0 ID = 195A VGS = 10V ID, Drain-to-Source Current (A) 100 T J = 175°C 10 T J = 25°C 1.5 1.0 1 VDS = 15V ≤60µs PULSE WIDTH 2 3 4 5 6 7 8 9 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 14.0 ID= 195A VGS, Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 19V VDS= 12V C, Capacitance (pF) 10000 Ciss Coss Crss 1000 1 10 VDS, Drain-to-Source Voltage (V) 100 0 50 100 150 200 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com AUIRF1324S/L 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 1msec 100 Limited by package 10msec Tc = 25°C Tj = 175°C Single Pulse 1 0.0 0.5 1.0 1.5 1 10 VDS, Drain-to-Source Voltage (V) 100 VSD, Source-to-Drain Voltage (V) 100 T J = 175°C 10 T J = 25°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10 VGS = 0V 1.0 DC 350 300 ID, Drain Current (A) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 32 Id = 5mA Limited By Package 250 200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 30 28 26 24 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 2.0 1.8 1.6 1.4 Fig 10. Drain-to-Source Breakdown Voltage 1200 EAS , Single Pulse Avalanche Energy (mJ) 1000 800 600 400 200 0 ID 44A 83A BOTTOM 195A TOP Energy (µJ) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -5 0 5 10 15 20 25 30 25 50 75 100 125 150 175 Fig 11. Typical COSS Stored Energy VDS, Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com 5 AUIRF1324S/L 1 Thermal Response ( Z thJC ) °C/W D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.0125 0.0822 0.2019 0.2036 0.000008 0.000078 0.001110 0.007197 τi (sec) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 100 0.05 0.10 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs.Pulsewidth 6 www.irf.com AUIRF1324S/L 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature 4.5 VGS(th) , Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) ID = 250µA ID = 1.0mA ID = 1.0A Fig 16. Threshold Voltage vs. Temperature www.irf.com 7 AUIRF1324S/L D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 22a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 22b. Unclamped Inductive Waveforms VDS 90% D.U.T. + - VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) tr t d(off) tf Fig 23a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. Fig 23b. Switching Time Waveforms Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr 8 Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com AUIRF1324S/L D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF1324S IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRF1324S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF1324L IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF1324S/L D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 www.irf.com 11 AUIRF1324S/L Ordering Information Base part AUIRF1324S AUIRF1324L Package Type D2Pak TO-262 Standard Pack Form Tube Tape and Reel Left Tape and Reel Right Tube Complete Part Number Quantity 50 800 800 50 AUIRF1324S AUIRF1324STRL AUIRF1324STRR AUIRF1324L 12 www.irf.com AUIRF1324S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13