AUIRF2804

AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D D ID (Package Limited) 195A D G D S G D S G D S TO-220AB AUIRF2804 G D2Pak AUIRF2804S D TO-262 AUIRF2804L S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 270 190 195 1080 300 2.0 ± 20 540 1160 c Units A d W W/°C V mJ A mJ d e e d See Fig.12a,12b,15,16 -55 to + 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance RθJC RθCS RθJA Mounting torque, 6-32 or M3 screw Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient l Parameter Typ. ––– 0.50 ––– ––– Max. 0.50 ––– 62 40 Units °C/W RθJA Junction-to-Ambient (PCB Mount, steady state) HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ j www.irf.com 1 02/19/10 AUIRF2804/S/L Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) SMD RDS(on) TO-220 VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 40 ––– ––– ––– 2.0 130 ––– ––– ––– ––– Typ. Max. Units ––– 0.031 1.5 1.8 ––– ––– ––– ––– ––– ––– ––– ––– 2.0 2.3 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A ** mΩ VGS = 10V, ID = 75A ** V VDS = VGS, ID = 250µA S VDS = 10V, ID = 75A ** VDS = 40V, VGS = 0V µA VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V f f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units 160 41 66 13 120 130 130 4.5 7.5 6450 1690 840 5350 1520 2210 240 62 99 ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 75A ** VDS = 32V VGS = 10V VDD = 20V ID = 75A ** RG = 2.5Ω VGS = 10V Between lead, f f ns D 6mm (0.25in.) from package G pF S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V g Diode Characteristics Parameter IS ISM VSD trr Qrr ton Notes:  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN-1140) http://www.irf.com/technical-info/appnotes/an-1140.pdf ‚ Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ƒ This value determined from sample failure population , starting T J = 25°C, L=0.24mH, RG = 25Ω, IAS = 75A, VGS =10V. Min. ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– ––– 56 67 270 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ™ Conditions MOSFET symbol D A Ù 1080 1.3 84 100 V ns nC showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 75A **, VGS = 0V TJ = 25°C, IF = 75A **, VDD = 20V di/dt = 100A/µs f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) „ ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 1.0ms; duty cycle ≤ 2%. † Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‡ This value determined from sample failure population. 100% tested to this value in production ˆ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Max RDS(on) for D2Pak and TO-262 (SMD) devices. Š TO-220 device will have an Rth value of 0.45°C/W. * * All AC and DC test condition based on old Package limitation current = 75A. f 2 www.irf.com AUIRF2804/S/L Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2 PAK MSL1 N/A Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes Moisture Sensitivity Level TO-220 TO-262 Machine Model ESD Human Body Model Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF2804/S/L 10000 ID, Drain-to-Source Current (A) 1000 ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10000 TOP TOP 1000 15V 15V 10V 10V 8.0V 8.0V 7.0V 7.0V 6.0V 6.0V 5.5V 5.5V 5.0V 5.0V BOTTOM 4.5V BOTTOM 4.5V V VGS GS 100 100 10 4.5V 20µs PULSE WIDTH Tj = 25°C 4.5V 20µs PULSE WIDTH Tj = 175°C 0.1 1 10 100 1 0.1 1 10 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 300 G fs , Forward Transconductance ( S) ID, Drain-to-Source Current (Α) 250 T J = 175°C 100 T J = 25°C 200 150 T J = 25°C 10 T J = 175°C 100 1 4.0 5.0 6.0 VDS = 10V 20µs PULSE WIDTH 7.0 8.0 9.0 50 0 0 40 80 VDS = 10V 20µs PULSE WIDTH 120 160 200 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 4 www.irf.com AUIRF2804/S/L 20 12000 10000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + C , Cds SHORTED gs gd Crss = C gd Coss = Cds + C gd ID= 75A VDS= 32V VDS= 20V VDS= 8.0V 16 C, Capacitance (pF) 8000 12 6000 Ciss 8 4000 4 2000 Coss Crss 0 1 10 100 0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 100.0 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10.0 100 1msec 10msec 1.0 T J = 25°C 0.1 0.2 0.6 1.0 1.4 VGS = 0V 1.8 2.2 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRF2804/S/L 300 Limited By Package 250 ID, Drain Current (A) 2.0 200 150 100 50 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) RDS(on) , Drain-to-Source On Resistance ID = 75A VGS = 10V 1.5 (Normalized) 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 0.0001 1E-008 1E-007 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF2804/S/L 15V 1200 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 1000 800 600 400 200 0 25 50 75 100 ID 31A 53A BOTTOM 75A TOP RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD 4.0 VGS(th) Gate threshold Voltage (V) Charge 3.0 ID = 250µA Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.0 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature www.irf.com 7 AUIRF2804/S/L 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 500 400 300 200 100 0 25 50 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRF2804/S/L D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF2804/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF2804 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2804/S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUIRF2804S IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF2804/S/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUIRF2804L IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRF2804/S/L D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 www.irf.com 13 AUIRF2804/S/L Ordering Information Base part AUIRF2804 AUIRF2804L AUIRF2804S Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 50 800 800 AUIRF2804 AUIRF2804L AUIRF2804S AUIRF2804STRL AUIRF2804STRR 14 www.irf.com AUIRF2804/S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 15