AUIRF2907Z

PD - 97545 AUTOMOTIVE GRADE Features ● ● ● ● ● HEXFET® Power MOSFET D AUIRF2907Z 75V 4.5mΩ 170A 75A ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) G S ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S TO-220AB AUIRF2907Z G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Max. 170 120 75 680 300 2.0 ± 20 270 690 See Fig.12a,12b,15,16 -55 to + 175 300 10 lbf•in (1.1N•m) Units A c W W/°C V mJ A mJ °C c i d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range h Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance RθJC RθCS RθJA Mounting torque, 6-32 or M3 screw Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j Parameter Typ. ––– 0.50 ––– Max. 0.50 ––– 62 k Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/23/2010 AUIRF2907Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 ––– ––– 2.0 180 ––– ––– ––– ––– ––– 0.069 3.5 ––– ––– ––– ––– ––– ––– ––– ––– 4.5 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 75A µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 180 46 65 19 140 97 100 5.0 13 7500 970 510 3640 650 1020 270 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nC ns Conditions ID = 75A VDS = 60V VGS = 10V VDD = 38V ID = 75A RG = 2.5Ω VGS = 10V Between lead, f f nH D 6mm (0.25in.) from package G S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 41 59 75 A 680 1.3 61 89 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 38V di/dt = 100A/µs f S Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L=0.095mH, RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 75A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ‡ This value determined from sample failure population, starting TJ = 25°C, L=0.095mH, RG = 25Ω, IAS = 75A, VGS =10V. ˆ Rθ is measured at TJ of approximately 90°C. ‰ TO-220 device will have an Rth of 0.45°C/W. 2 www.irf.com AUIRF2907Z Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB N/A Class M4 (425V) AEC-Q101-002 Class H2 (4000V) AEC-Q101-001 Charged Device Model Class C4 (1000V) AEC-Q101-005 Yes Moisture Sensitivity Level Machine Model Human Body Model ESD RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF2907Z 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 1000 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 100 4.5V 10 4.5V ≤60µs PULSE WIDTH 1 0.1 1 Tj = 25°C 10 100 0.1 1 10 ≤60µs PULSE WIDTH Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 Gfs, Forward Transconductance (S) 200 T J = 25°C 150 ID, Drain-to-Source Current (Α ) 100 T J = 175°C 10 T J = 25°C 100 T J = 175°C 1 VDS = 25V ≤60µs PULSE WIDTH 2 4 6 8 10 50 V DS = 10V 380µs PULSE WIDTH 0 0 25 50 75 100 125 150 ID,Drain-to-Source Current (A) 0.1 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 4 www.irf.com AUIRF2907Z 100000 C oss = C ds + C gd VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 12.0 ID= 90A 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 60V VDS= 38V VDS= 15V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 100 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 1msec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) T J = 175°C 100 1000 10 TJ = 25°C 10 Limited by package 10msec Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS, Drain-to-Source Voltage (V) DC 1 VGS = 0V 1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) 0.1 100 ce Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRF2907Z 180 160 140 ID, Drain Current (A) 2.5 Limited By Package RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 90A VGS = 10V 2.0 120 100 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ1 τ2 τ 0.01 Ri (°C/W) τi (sec) 0.279 0.000457 0.221 0.003019 Ci= τi/Ri Ci i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF2907Z EAS , Single Pulse Avalanche Energy (mJ) 15V 1200 1000 800 600 400 200 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) ID TOP 9.0A 13A BOTTOM 75A VDS L DRIVER RG 20V VGS D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG VGS(th) Gate threshold Voltage (V) QGD 4.0 3.5 Charge 3.0 Fig 13a. Basic Gate Charge Waveform 2.5 ID = 250µA 2.0 1.5 L 0 DUT 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF2907Z 100 0.01 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 10 0.05 0.10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 250 200 150 100 50 0 25 50 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRF2907Z D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ - +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF2907Z TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF2907Z IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2907Z Ordering Information Base part AUIRF2907Z Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF2907Z www.irf.com 11 AUIRF2907Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 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