AUIRF3805S-7P

AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P AUIRF3805L-7P Features l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) typ. 55V 2.0mΩ Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S max. 2.6mΩ ID D i S (Pin 2, 3, 5, 6, 7) G (Pin 1) D 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRF3805S-7P D2Pak 7 Pin G S S S S S GS SS S S TO-263CA 7 Pin AUIRF3805L-7P G D S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 240 170 160 1000 300 2.0 ± 20 440 680 See Fig.12a,12b,15,16 2.3 -55 to + 175 300 10 lbf•in (1.1N•m) A W W/°C V mJ A mJ V/ns °C c c d j c e Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) h Parameter Typ. ––– 0.50 ––– ––– Max. 0.50 ––– 62 40 Units °C/W g HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/20/10 AUIRF3805S/L-7P Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) SMD VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– 2.0 110 ––– ––– ––– ––– ––– 0.05 2.0 ––– ––– ––– ––– ––– ––– ––– ––– 2.6 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 140A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 140A VDS = 55V, VGS = 0V µA VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 130 53 49 23 130 80 52 4.5 7.5 7820 1260 610 4310 980 1540 200 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 140A VDS = 44V VGS = 10V VDD = 28V ID = 140A RG = 2.4Ω VGS = 10V Between lead, e e ns D 6mm (0.25in.) from package G pF f S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 45 35 240 A 1000 1.3 68 53 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù S p-n junction diode. TJ = 25°C, IS = 140A, VGS = 0V TJ = 25°C, IF = 140A, VDD = 28V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ This value determined from sample failure population starting TJ = 25°C, L=0.043mH, RG = 25Ω, IAS = 140A,VGS =10V. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. … This is applied to D2Pak, when mounted on 1" square PCB † Rθ is measured at TJ of approximately 90°C. ‡ Solder mounted on IMS substrate. ˆ Limited by TJmax starting TJ = 25°C, L=0.043mH, RG = 25Ω, IAS = 140A,VGS =10V.Part not recommended for use above this value. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com AUIRF3805S/L-7P Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 7L-D2 PAK MSL1 , 260°C Class M4(+/-425V) (per AEC-Q101-002) Class H3A(+/-4000V) (per AEC-Q101-001) Class C5 (+/-1000V) (per AEC-Q101-005) Yes Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF3805S/L-7P 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 1000 1000 BOTTOM 100 4.5V 10 10 1 4.5V ≤60µs PULSE WIDTH 0.1 0.1 1 Tj = 25°C 10 1 100 1000 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 1000 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 Gfs, Forward Transconductance (S) 250 TJ = 25°C 200 ID, Drain-to-Source Current (Α) 100 T J = 175°C 150 T J = 175°C 10 TJ = 25°C 100 VDS = 25V ≤60µs PULSE WIDTH 1.0 2 4 6 8 10 50 V DS = 10V 380µs PULSE WIDTH 0 0 20 40 60 80 100 120 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 4 www.irf.com AUIRF3805S/L-7P 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd 12.0 ID= 140A VGS, Gate-to-Source Voltage (V) C rss = C gd 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 64V VDS= 40V C, Capacitance(pF) 10000 Ciss Coss 1000 Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 50 100 150 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 1msec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 1000 100 10msec DC 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 VDS, Drain-to-Source Voltage (V) 100 10 10 1 VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) 0.1 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRF3805S/L-7P 250 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID = 140A VGS = 10V 2.0 200 ID, Drain Current (A) 150 1.5 100 50 1.0 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) 0.0794 0.1474 0.2737 τi (sec) 0.000192 0.000628 0.014012 τ1 0.01 τ2 Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF3805S/L-7P 15V 2000 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER RG VGS 20V D.U.T IAS tp + V - DD 1500 ID TOP 21A 37A BOTTOM 140A A 0.01Ω 1000 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 500 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG VGS(th) Gate threshold Voltage (V) QGD 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. ID = 250µA ID = 1.0mA ID = 1.0A 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature www.irf.com 7 AUIRF3805S/L-7P 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 10 1.0E-03 tav (sec) 1.0E-02 1.0E-01 Fig 15. Typical Avalanche Current vs.Pulsewidth 500 EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 140A 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRF3805S/L-7P D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3805S/L-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information AUIRF3805S-7 Part Number IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3805S/L-7P TO-263CA 7 Pin Long Leads Package Outline Dimensions are shown in millimeters (inches) TO-263CA - 7 Pin Part Marking Information Part Number AUIRF3805L-7 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF3805S/L-7P D2Pak - 7 Pin Tape and Reel 12 www.irf.com AUIRF3805S/L-7P Ordering Information Base part AUIRF3805L-7P AUIRF3805S-7P Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRF3805L-7P AUIRF3805S-7P AUIRF3805S-7PTRL AUIRF3805S-7PTRR www.irf.com 13 AUIRF3805S/L-7P IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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