AUIRF3805STRL

AUTOMOTIVE GRADE PD - 96319 Features l l l l l l l HEXFET® Power MOSFET D AUIRF3805 AUIRF3805S AUIRF3805L 55V 2.6mΩ 210A c 3.3mΩ max. Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) ID (Package Limited) 160A D D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G D S G D S G D S TO-220AB AUIRF3805 G D2Pak AUIRF3805S D TO-262 AUIRF3805L S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (Tested ) IAR EAR TJ TSTG Thermal Resistance RθJC RθCS RθJA RθJA Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw d Ãd e e h 210 150 160 890 300 2.0 ± 20 650 940 See Fig.12a, 12b, 15, 16 -55 to + 175 ™ ™ Units A W W/°C V mJ A mJ °C i 300 10 lbf in (1.1N m) y y Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount) k i Parameter Typ. ––– 0.50 ––– ––– Max. 0.5 ––– 62 40 i j l Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/20/10 AUIRF3805/S/L Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– 2.0 75 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.051 2.6 ––– ––– ––– ––– ––– ––– 190 52 72 150 20 93 87 4.5 7.5 7960 1260 630 4400 980 1550 ––– ––– 3.3 4.0 ––– 20 250 200 -200 290 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A ** V VDS = VGS, ID = 250µA V VDS = 25V, ID = 75A ** VDS = 55V, VGS = 0V µA VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. nC ID = 75A ** VDS = 44V VGS = 10V VDD = 28V ID = 75A** RG = 2.6 Ω VGS = 10V Between lead, f f ns D 6mm (0.25in.) from package G pF S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V g Diode Characteristics Parameter IS ISM VSD trr Qrr ton Note Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 36 47 210 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time  through Š ,, ™ Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A** , VGS = 0V TJ = 25°C, IF = 75A** , VDD = 28V di/dt = 100A/µs A V ns nC Ù 890 1.3 54 71 f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ∗ ∗ are on page 3 www.irf.com 2 AUIRF3805/S/L Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-D2 PAK MSL1 , 260°C N/A Class M4(+/-425V) (per AEC-Q101-002) Class H3A(+/-4000V) (per AEC-Q101-001) Class C5 (+/-1000V) (per AEC-Q101-005) Yes Moisture Sensitivity Level 3L-TO-262 3L-TO-220 Machine Model ESD Human Body Model Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead ‚ ƒ mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). This value determined from sample failure population , starting T J = 25°C, L = 0.23mH RG = 25Ω, I AS = 75A, „ … VGS =10V. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to † ‡ ˆ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ of approximately 90°C. Š TO-220 device will have an Rth of 0.45°C/W. * * All AC and DC test condition based on former Package limitated current of 75A. 80% VDSS . www.irf.com 3 AUIRF3805/S/L 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 10 0.1 4.5V ≤ 60µs PULSE WIDTH Tj = 175°C 10 100 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 200 TJ = 175°C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current(Α) TJ = 25°C 160 TJ = 175°C 100.0 120 10.0 TJ = 25°C 1.0 80 VDS = 20V ≤ 60µs PULSE WIDTH 0.1 4.0 5.0 6.0 7.0 8.0 40 VDS = 10V 380µs PULSE WIDTH 0 20 40 60 80 100 120 140 160 180 0 ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 4 www.irf.com AUIRF3805/S/L 14000 12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 VGS, Gate-to-Source Voltage (V) ID= 75A 16 VDS = 44V VDS= 28V C, Capacitance (pF) 10000 8000 6000 4000 2000 0 1 Ciss 12 8 Coss Crss 10 100 4 0 0 50 100 150 200 250 300 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 ISD , Reverse Drain Current (A) TJ = 175°C 100.0 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 10msec 10 1msec 10.0 TJ = 25°C 1.0 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Tc = 25°C Tj = 175°C Single Pulse 1 10 100 1000 0.1 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRF3805/S/L 240 LIMITED BY PACKAGE 200 ID , Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 75A VGS = 10V 160 120 80 40 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 D = 0.50 Thermal Response ( ZthJC ) 0.1 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 τC τ1 τ2 τ 0.01 τJ Ri (°C/W) 0.2653 0.2347 τi (sec) 0.001016 0.012816 0.001 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF3805/S/L EAS, Single Pulse Avalanche Energy (mJ) 15V 2000 VDS L DRIVER 1600 ID 15A 20A BOTTOM 75A TOP RG 20V VGS D.U.T IAS tp + V - DD 1200 A 0.01Ω 800 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 400 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 4.5 VG 4.0 ID = 250µA 3.5 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 3.0 2.5 50KΩ 12V .2µF .3µF 2.0 D.U.T. VGS 3mA + V - DS 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature www.irf.com 7 AUIRF3805/S/L 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 100 0.01 0.05 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 10 0.10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 800 EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f 175 ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRF3805/S/L Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3805/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF3805 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3805/S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUIRF3805S IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF3805/S/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUIRF3805L IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRF3805/S/L D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 www.irf.com 13 AUIRF3805/S/L Ordering Information Base part AUIRF3805 AUIRF3805L AUIRF3805S Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 50 800 800 AUIRF3805 AUIRF3805L AUIRF3805S AUIRF3805STRL AUIRF3805STRR 14 www.irf.com AUIRF3805/S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 15