AUIRF4104STRR

PD - 97471A AUTOMOTIVE GRADE Features Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF4104 AUIRF4104S HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) 40V 4.3mΩ 5.5mΩ 120A 75A G S Description ID (Package Limited) k Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB AUIRF4104 D2Pak AUIRF4104S Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Power Dissipation Max. 120 84 75 470 140 k k Units A ™ W W/°C V mJ A mJ °C Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Ù g d 0.95 ± 20 120 220 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1N m) Operating Junction and Storage Temperature Range g Thermal Resistance RθJC RθCS Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw j y y Junction-to-Case i Parameter Typ. ––– 0.50 ––– Max. 1.05 ––– 40 Units °C/W Case-to-Sink, Flat Greased Surface Junction-to-Ambient (PCB Mount) RθJA HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Note  to ‰ are on page 3 www.irf.com 1 3/29/10 AUIRF4104/S Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Parameter V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 40 ––– ––– 2.0 63 ––– ––– ––– ––– ––– 0.032 4.3 ––– ––– ––– ––– ––– ––– ––– ––– 5.5 4.0 ––– 20 250 200 -200 V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A V V μA nA VDS = VGS, ID = 250μA VDS = 10V, ID = 75A e VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 68 21 27 16 130 38 77 4.5 7.5 3000 660 380 2160 560 850 100 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 6.8 Ω VGS = 10V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V G D S ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time f Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 23 6.8 75 A 470 1.3 35 10 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs Ù e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com AUIRF4104/S Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB D PAK 2 Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant N/A MSL1 Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C3 AEC-Q101-005 Yes ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. … This value determined from sample failure population, max. junction temperature. (See fig. 11). starting TJ = 25°C, L = 0.04mH, RG = 25Ω, IAS = 75A, VGS =10V ‚ Limited by TJmax, starting TJ = 25°C, L = 0.04mH † This is applied to D2Pak, when mounted on 1" square PCB RG = 25Ω, IAS = 75A, VGS =10V. Part not ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. recommended for use above this value. ‡ Rθ is measured at TJ approximately 90°C. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ˆ This is only applied to TO-220AB pakcage. „ Coss eff. is a fixed capacitance that gives the ‰ Calculated continuous current based on maximum allowable same charging time as Coss while VDS is rising junction temperature. Bond wire current limit is 75A. Note that from 0 to 80% VDSS . current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN-1140 http://www.irf.com/technical-info/appnotes/an-1140.pdf)  Repetitive rating; pulse width limited by Notes: www.irf.com 3 AUIRF4104/S 1000 TOP VGS 1000 TOP ID, Drain-to-Source Current (A) 100 10 ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 1 0.1 0.1 1 20μs PULSE WIDTH Tj = 25°C 10 10 100 4.5V 0.1 1 20μs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 120 T J = 25°C T J = 175°C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 100 80 60 40 20 0 T J = 25°C 100 TJ = 175°C 10 1 4 6 8 VDS = 15V 20μs PULSE WIDTH 10 12 VDS = 10V 380μs PULSE WIDTH 0 20 40 60 80 100 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 4 www.irf.com AUIRF4104/S 5000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID= 75A VDS= 32V VDS= 20V 4000 VGS, Gate-to-Source Voltage (V) 16 C, Capacitance (pF) 3000 Ciss 12 2000 8 1000 Coss Crss 4 0 1 10 100 0 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100.0 T J = 175°C 10.0 T J = 25°C 1.0 1000 100 100μsec 10 Tc = 25°C Tj = 175°C Single Pulse 0 1 10 1msec 10msec 100 1000 0.1 0.2 0.6 1.0 VGS = 0V 1.4 1.8 1 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) nce Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRF4104/S 120 LIMITED BY PACKAGE 100 ID , Drain Current (A) 2.0 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.371 0.000272 0.337 0.337 0.001375 0.018713 τ1 τ2 0.01 Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 0.001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF4104/S EAS, Single Pulse Avalanche Energy (mJ) 15V 500 TOP VDS L DRIVER 400 BOTTOM ID 11A 16A 75A RG VGS 20V D.U.T IAS tp + V - DD 300 A 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 4.0 VG 3.0 ID = 250μA Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.0 50KΩ 12V .2μF .3μF D.U.T. VGS 3mA + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature www.irf.com 7 AUIRF4104/S 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Δ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Avalanche Current (A) 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 120 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRF4104/S Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD VDS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + - VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF4104/S TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF4104 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Leadfree IR Logo Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF4104/S D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUF4104S YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Leadfree IR Logo Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF4104/S D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 TO-220AB package is not recommended for Surface Mount Application. 12 www.irf.com AUIRF4104/S Ordering Information Base part number Package Type AUIRF4104 AUIRF4104S AUIRF4104S AUIRF4104S TO-220 D2Pak Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF4104 Tube 50 AUIRF4104S Tape and Reel Left 800 AUIRF4104STRL Tape and Reel Right 800 AUIRF4104STRR www.irf.com 13 AUIRF4104/S IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 14 www.irf.com AUIRF4104/S Revision History Date 2/5/2010 Revised with new AU tem plate: Comments 1)Add sentence below Absolute Max Rating 2)Update ESD by using ESD data and table from Anika 3)Update Part Marking drawing 4) Add Order Info table 5) Add Revision History www.irf.com 15