AUIRF7640S2TR1

PD -97551 AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Class D Audio Amplifier and High Speed • • • • • • • • • Switching Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into an 8Ω Load Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free SB SC M2 M4 DirectFET™ Power MOSFET ‚ V(BR)DSS 60V RDS(on) typ. 27m max. RG (typical) Qg (typical) AUIRF7640S2TR AUIRF7640S2TR1 : 36m: 3.5: 7.3nC Applicable DirectFET Outline and Substrate Outline  SB DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed switching systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. 60 ± 20 21 15 5.8 77 84 30 2.4 38 57 See Fig.18a, 18b, 15, 16 270 -55 to + 175 Units V A f e f W mJ A mJ °C Ù g d ™ Thermal Resistance RθJA RθJA RθJA RθJ-Can RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can fl e j k Parameter Typ. ––– 12.5 20 ––– 1.4 0.2 Max. 63 ––– ––– 5.0 ––– Units °C/W Junction-to-PCB Mounted HEXFET® is a registered trademark of International Rectifier. Linear Derating Factor fl W/°C www.irf.com 1 8/16/10 AUIRF7640S2TR/TR1 Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ gfs RG IDSS IGSS Static @ TJ = 25°C (unless otherwise specified) Min. 60 ––– ––– 3.0 ––– 9.3 ––– Typ. Max. Units ––– 0.1 27 4.0 -11 ––– 3.5 ––– ––– ––– ––– 7.3 1.5 0.9 3.0 1.9 3.9 5.3 4.0 12 6.3 6.2 450 160 48 610 120 Conditions Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– VGS = 0V, ID = 250μA ––– V ––– V/°C Reference to 25°C, ID = 1mA 36 mΩ VGS = 10V, ID = 13A VDS = VGS, ID = 25μA 5.0 V ––– mV/°C VDS = 50V, ID = 13A ––– S 5.0 Ω 5 μA VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA VGS = -20V -100 i Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Coss Coss 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– VDS = 30V VGS = 10V ID = 13A See Fig. 6 and 17 nC nC ns VDS = 16V, VGS = 0V VDD = 30V, VGS = 10V ID = 13A RG=6.8Ω VGS = 0V VDS = 25V Ãi pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 48V, f=1.0MHz Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– ––– 26 24 21 84 1.3 39 36 V ns nC A Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 13A, VGS = 0V TJ = 25°C, IF = 13A, VDD = 25V di/dt = 100A/μs D Ãg i S i ƒ Surface mounted on 1 in. square Cu (still air). ‰ Mounted to a PCB with small clip heatsink (still air) ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes  through Š are on page 3 2 www.irf.com AUIRF7640S2TR/TR1 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Class B AEC-Q101-002 Class 2 AEC-Q101-001 Charged Device Model Class IV AEC-Q101-005 Yes MSL1 Moisture Sensitivity Level Machine Model Human Body Model ESD RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com †† Exceptions to AEC-Q101 requirements are noted in the qualification report. Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A. ‡ Pulse width ≤ 400μs; duty cycle ≤ 2%. ˆ Used double sided cooling, mounting pad with large heatsink. ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š Rθ is measured at TJ of approximately 90°C. www.irf.com 3 AUIRF7640S2TR/TR1 100 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 1 BOTTOM 10 BOTTOM 0.1 1 5.0V 0.01 5.0V 0.001 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) ≤60μs PULSE WIDTH Tj = 25°C ≤60μs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Ω RDS(on), Drain-to -Source On Resistance (m ) ID = 13A 80 ( RDS(on), Drain-to -Source On Resistance mΩ) Fig 2. Typical Output Characteristics 100 Vgs = 10V 80 100 TJ = 125°C 60 TJ = 125°C 60 40 20 TJ = 25°C 0 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 TJ = 25°C 20 0 10 20 30 40 50 ID, Drain Current (A) Fig 3. Typical On-Resistance vs. Gate Voltage 100 VGS, Gate -to -Source Voltage (V) Fig 4. Typical On-Resistance vs. Drain Current 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 13A 2.0 ID, Drain-to-Source Current(A) VGS = 10V 10 1 TJ = -40°C TJ = 25°C TJ = 175°C 1.5 0.1 VDS = 25V ≤60μs PULSE WIDTH 0.01 2 4 6 8 10 12 14 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120140160 180 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 4 www.irf.com AUIRF7640S2TR/TR1 6.5 VGS(th), Gate threshold Voltage (V) 100 TJ = -40°C TJ = 25°C TJ = 175°C 10 5.5 4.5 3.5 I D = 25μA ID = 250μA ID = 1.0mA D = 1.0A ISD, Reverse Drain Current (A) 1 2.5 VGS = 0V 0.1 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Threshold Voltage vs. Junction Temperature 18 Gfs , Forward Transconductance (S) Fig 8. Typical Source-Drain Diode Forward Voltage 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 16 14 TJ = 25°C C, Capacitance (pF) 12 10 8 6 4 2 0 0 4 8 12 16 20 24 ID,Drain-to-Source Current (A) VDS = 5.0V 380μs PULSE WIDTH TJ = 175°C 1000 Ciss Coss 100 Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 9. Typical Forward Transconductance Vs. Drain Current 14 ID= 13A VGS, Gate-to-Source Voltage (V) Fig 10. Typical Capacitance vs.Drain-to-Source Voltage 24 12 10 8 6 4 2 0 0 2 VDS= 80V VDS= 50V ID, Drain Current (A) 20 16 12 8 4 0 VDS= 20V 4 6 8 10 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) TC , Case Temperature (°C) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature www.irf.com 5 AUIRF7640S2TR/TR1 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) EAS , Single Pulse Avalanche Energy (mJ) 1000 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) ID 2.5A 4.8A BOTTOM 13A TOP 100 1msec 10 100μsec 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 0 1 DC 10msec 10 100 VDS , Drain-toSource Voltage (V) Fig 13. Maximum Safe Operating Area 10 Thermal Response ( Z thJC ) °C/W Fig 14. Maximum Avalanche Energy vs. Temperature D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.49687 τ τi (sec) 0.000119 8.231486 0.018926 0.002741 τJ 0.00517 2.55852 1.94004 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Δ Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 10 0.01 0.05 1 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current Vs.Pulsewidth 6 www.irf.com AUIRF7640S2TR/TR1 40 EAR , Avalanche Energy (mJ) 30 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 13A 20 10 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav V(BR)DSS tp Fig 17. Maximum Avalanche Energy Vs. Temperature 15V VDS L DRIVER RG 20V D.U.T IAS tp + - VDD VGS A 0.01Ω I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds L 0 DUT 20K 1K S VCC Vgs Vgs(th) Fig 19a. Gate Charge Test Circuit VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD Qgodr Qgd Qgs2 Qgs1 Fig 19b. Gate Charge Waveform VDS + D.U.T. - V DD 90% 10% VGS td(on) tr t d(off) tf Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms www.irf.com 7 AUIRF7640S2TR/TR1 DirectFET Auto™ Board Footprint, SB (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations CL G = GATE D = DRAIN S = SOURCE D G D S D D 8 www.irf.com AUIRF7640S2TR/TR1 DirectFET Auto™ Outline Dimension, SB Outline (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DIMENSIONS CODE A B C D E F G H J K L M P R METRIC MIN MAX 4.75 4.85 3.70 3.95 2.75 2.85 0.35 0.45 0.48 0.52 0.88 0.92 0.98 1.02 0.88 0.92 N/A N/A 0.95 1.05 1.85 1.95 0.68 0.74 0.08 0.17 0.02 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.035 0.036 0.039 0.040 0.035 0.036 N/A N/A 0.037 0.041 0.073 0.077 0.027 0.029 0.003 0.007 0.001 0.003 DirectFET™ Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" www.irf.com 9 AUIRF7640S2TR/TR1 Automotive DirectFET™ Tape & Reel Dimension (Showing component orientation). F D C B NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7640S2TR). For 1000 parts on 7" reel, order AUIRF7640S2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC CODE MIN MIN MAX MIN MIN MAX MAX MAX 12.992 6.9 A N.C 177.77 N.C 330.0 N.C N.C 0.795 0.75 B N.C 19.06 20.2 N.C N.C N.C C 0.504 0.53 0.50 13.5 12.8 0.520 13.2 12.8 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 3.937 2.31 N.C 58.72 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 N.C 12.4 0.567 14.4 12.01 H 0.469 0.47 11.9 N.C 11.9 0.606 15.4 12.01 E G H LOADED TAPE FEED DIRECTION B A H D F E G DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 0.319 8.10 7.90 0.154 4.10 3.90 0.161 0.469 0.484 12.30 11.90 0.215 5.55 5.45 0.219 0.158 4.00 0.165 4.20 0.205 0.197 5.20 5.00 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H 10 C A www.irf.com AUIRF7640S2TR/TR1 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11