AUIRF7665S2TR1

PD - 96286 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7665S2TR AUIRF7665S2TR1 DirectFET™ Power MOSFET ‚ V(BR)DSS 100V RDS(on) typ. 51mΩ max. 62mΩ RG (typical) 3.5Ω Qg (typical) 8.3nC Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 SB DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Max. 100 ± 20 14.4 10.2 4.1 77 58 30 2.4 37 56 See Fig. 18a,18b,16,17 270 -55 to + 175 Units V Continuous Drain Current, VGS @ 10V (Silicon Limited)e A Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy (Tested Value) Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and f e f W mJ A mJ °C Ãg h h g Storage Temperature Range Thermal Resistance Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can RθJA RθJA RθJA RθJ-Can RθJ-PCB Junction-to-PCB Mounted fl e j k Parameter Typ. ––– 12.5 20 ––– 1.4 0.2 Max. 63 ––– ––– 5.0 ––– Units °C/W Linear Derating Factor HEXFET® is a registered trademark of International Rectifier. f W/°C www.irf.com 1 01/05/10 AUIRF7665S2TR/TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ gfs RG(int) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 ––– ––– 3.0 ––– 8.8 ––– ––– ––– ––– ––– Typ. ––– 0.10 51 4.0 -13 ––– 3.5 ––– ––– ––– ––– Max. ––– ––– 62 5.0 ––– ––– 5.0 20 250 100 -100 Units V V/°C Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 8.9A mΩ V VDS = VGS, ID = 25µA mV/°C VDS = 25V, ID = 8.9A S i Ω µA nA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 8.3 1.9 0.77 3.2 2.4 4.0 4.7 3.8 6.4 7.1 3.6 515 110 30 530 70 115 Max. 13 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units VDS = 50V VGS = 10V nC ID = 8.9A See Fig. 11 Conditions nC VDS = 16V, VGS = 0V VDD = 50V ID = 8.9A RG = 6.8Ω VGS = 10V VGS = 0V VDS = 25V ns i pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 33 38 Max. 14.4 58 1.3 ––– ––– Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 8.9A, VGS = 0V TJ = 25°C, IF = 8.9A, VDD = 25V di/dt = 100A/µs Ãg V ns nC i i ƒ Surface mounted on 1 in. square Cu (still air). ‰ Mounted to a PCB with small clip heatsink (still air) ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes  through Š are on page 11 2 www.irf.com AUIRF7665S2TR/TR1 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Class B AEC-Q101-002 Class 2 AEC-Q101-001 Charged Device Model Class IV AEC-Q101-005 Yes MSL1 Moisture Sensitivity Level Machine Model Human Body Model ESD RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF7665S2TR/TR1 100 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 1 BOTTOM 10 BOTTOM 0.1 1 5.0V 0.01 5.0V ≤60µs PULSE WIDTH 0.001 0.1 1 Tj = 25°C 10 100 ≤60µs PULSE WIDTH Tj = 175°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on), Drain-to -Source On Resistance (m Ω) RDS(on), Drain-to -Source On Resistance ( mΩ) Fig 2. Typical Output Characteristics 320 Vgs = 10V 280 240 200 160 120 80 40 0 10 20 30 40 ID, Drain Current (A) T J = 25°C T J = 125°C 140 ID = 8.9A 120 100 T J = 125°C 80 60 T J = 25°C 40 6 7 8 9 10 11 12 13 14 15 Fig 3. Typical On-Resistance vs. Gate Voltage 100 RDS(on) , Drain-to-Source On Resistance (Normalized) VGS, Gate -to -Source Voltage (V) Fig 4. Typical On-Resistance vs. Drain Current 2.5 ID = 8.9A VGS = 10V 2.0 ID, Drain-to-Source Current (A) 10 1 T J = -40°C TJ = 25°C TJ = 175°C 1.5 0.1 VDS = 25V ≤60µs PULSE WIDTH 0.01 2 4 6 8 10 12 14 16 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 4 www.irf.com AUIRF7665S2TR/TR1 100 VGS(th) , Gate threshold Voltage (V) 6.5 ISD, Reverse Drain Current (A) 5.5 10 T J = -40°C TJ = 25°C TJ = 175°C 4.5 1 3.5 ID = 25µA 2.5 ID = 250µA ID = 1.0mA D = 1.0A 0.1 VGS = 0V 0.01 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Threshold Voltage vs. Junction Temperature 20 Gfs, Forward Transconductance (S) Fig 8. Typical Source-Drain Diode Forward Voltage 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 18 16 T J = 25°C C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 ID,Drain-to-Source Current (A) V DS = 10V 380µs PULSE WIDTH T J = 175°C 1000 Ciss Coss 100 Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 Fig 9. Typical Forward Transconductance Vs. Drain Current 14.0 ID= 8.9A VGS, Gate-to-Source Voltage (V) Fig 10. Typical Capacitance vs.Drain-to-Source Voltage 16 14 12 10 8 6 4 2 0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 2 VDS= 20V 4 6 8 10 12 ID, Drain Current (A) VDS= 80V VDS= 50V 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) T C , Case Temperature (°C) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature www.irf.com 5 AUIRF7665S2TR/TR1 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 160 EAS , Single Pulse Avalanche Energy (mJ) 140 120 100 80 60 40 20 0 ID, Drain-to-Source Current (A) 100 ID 1.64A 3.04A BOTTOM 8.90A TOP 10 100µsec 1msec 1 10msec 0.1 Tc = 25°C Tj = 175°C Single Pulse 0 1 DC 0.01 10 100 1000 VDS, Drain-to-Source Voltage (V) 25 50 75 100 125 150 175 Fig 13. Maximum Safe Operating Area 10 Thermal Response ( Z thJC ) °C/W Fig 14. Maximum Avalanche Energy vs. Temperature Starting T J , Junction Temperature (°C) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ2 τ3 τ4 τ4 Ri (°C/W) 0.49687 τ τi (sec) 0.000119 8.231486 0.018926 0.00517 2.55852 1.94004 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τ i/Ri Ci i/Ri 0.002741 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse Avalanche Current (A) 10 0.01 1 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.01 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 16. Typical Avalanche Current Vs.Pulsewidth 6 www.irf.com AUIRF7665S2TR/TR1 40 35 EAR , Avalanche Energy (mJ) 30 25 20 15 10 5 0 25 50 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 8.9A 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav V(BR)DSS tp Starting T J , Junction Temperature (°C) Fig 17. Maximum Avalanche Energy Vs. Temperature 15V VDS L DRIVER RG 20V D.U.T IAS tp + - VDD VGS A 0.01Ω I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds L 0 DUT 20K 1K S VCC Vgs Vgs(th) Fig 19a. Gate Charge Test Circuit VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD Qgodr Qgd Qgs2 Qgs1 Fig 19b. Gate Charge Waveform VDS + D.U.T. - V DD 90% 10% VGS td(on) tr t d(off) tf Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms www.irf.com 7 AUIRF7665S2TR/TR1 Automotive DirectFET™ Board Footprint, SB (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations CL G = GATE D = DRAIN S = SOURCE D G D S D D 8 www.irf.com AUIRF7665S2TR/TR1 Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations Automotive DirectFET™ Outline Dimension, SB Outline (Small Size Can). Automotive DirectFET™ Part Marking www.irf.com 9 AUIRF7665S2TR/TR1 Automotive DirectFET™ Tape & Reel Dimension (Showing component orientation). 10 www.irf.com AUIRF7665S2TR/TR1 Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A. ‡ Pulse width ≤ 400µs; duty cycle ≤ 2%. ˆ Used double sided cooling, mounting pad with large heatsink. ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š Rθ is measured at TJ of approximately 90°C. 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