AUIRF7739L2TR

AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free AUIRF7739L2TR AUIRF7739L2TR1 V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 700µΩ 1000µΩ 270A 220nC PD - 97442 Automotive DirectFET™ Power MOSFET ‚ Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 L8 DirectFET ™ ISOMETRIC L4 L6 L8 Description The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS (tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)e Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. 40 ± 20 270 190 46 375 1070 125 3.8 270 160 See Fig.12a, 12b, 15, 16 270 -55 to + 175 Units V A f e f W mJ A mJ °C Ù g h ™ Thermal Resistance Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can Junction-to-PCB Mounted Linear Derating Factor RθJA RθJA RθJA RθJCan RθJ-PCB fl e j k Parameter Typ. ––– 12.5 20 ––– ––– 0.83 Max. 40 ––– ––– 1.2 0.5 Units °C/W f W/°C HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 01/05/10 AUIRF7739L2TR/TR1 Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ gfs RG IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 40 ––– ––– 2.0 ––– 290 ––– ––– ––– ––– ––– Typ. ––– 0.008 700 2.8 -6.7 ––– 1.5 ––– ––– ––– ––– Max. ––– ––– 1000 4.0 ––– ––– ––– 20 250 100 -100 Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA µΩ VGS = 10V, ID = 160A V VDS = VGS, ID = 250µA i mV/°C VDS = 50V, ID = 160A S Ω µA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 220 46 19 81 74 100 83 21 71 56 42 11880 2510 1240 8610 2230 3040 Max. 330 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions VDS = 20V, VGS = 10V ID = 160A nC See Fig. 11 nC ns VDS = 16V, VGS = 0V VDD = 20V, VGS = 10V ID = 160A RG = 1.8Ω VGS = 0V VDS = 25V Ãi pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 32V, f=1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics @ TJ = 25°C (unless otherwise stated) IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 87 250 Max. 110 1070 1.3 130 380 V ns nC Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS = 160A, VGS = 0V IF = 160A, VDD = 20V di/dt = 100A/µs Ãg i i ƒ Surface mounted on 1 in. square Cu (still air). ‰ Mounted to a PCB with small clip heatsink (still air) ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes  through Š are on page 10 2 www.irf.com AUIRF7739L2TR/TR1 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. DFET2 Class B AEC-Q101-002 Class 2 AEC-Q101-001 Charged Device Model Class IV AEC-Q101-005 Yes MSL1 Moisture Sensitivity Level Machine Model Human Body Model ESD RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF7739L2TR/TR1 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 10 100 ≤60µs PULSE WIDTH Tj = 175°C 1 ≤60µs PULSE WIDTH Tj = 25°C 4.5V 4.5V 10 0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to -Source On Resistance (mΩ) Fig 2. Typical Output Characteristics RDS (on) , Drain-to-Source On Resistance (m Ω) 10 ID = 160A 8 0.93 0.92 0.91 0.90 0.89 0.88 0.87 0.86 0.85 0 VGS = 10V 6 4 2 T J = 25°C 5.0 5.5 6.0 6.5 T J = 125°C 0 7.0 7.5 8.0 40 80 120 160 200 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 3. Typical On-Resistance vs. Gate Voltage 1000 Fig 4. Typical On-Resistance vs. Drain Current 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ID = 160A VGS = 10V 100 T J = 175°C 10 T J = 25°C 1.5 1.0 1 VDS = 25V ≤60µs PULSE WIDTH 2 3 4 5 6 7 8 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120140 160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 4 www.irf.com AUIRF7739L2TR/TR1 5.0 VGS(th) , Gate threshold Voltage (V) 1000 4.5 ISD, Reverse Drain Current (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) TJ = 175°C 100 ID = 250µA ID = 1.0mA ID = 1.0A 10 T J = 25°C VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Threshold Voltage vs. Junction Temperature 150 Gfs, Forward Transconductance (S) Fig 8. Typical Source-Drain Diode Forward Voltage 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 125 100 75 50 25 0 0 25 50 T J = 25°C C, Capacitance (pF) T J = 175°C 10000 Ciss Coss Crss V DS = 10V 20µs PULSE WIDTH 1000 75 100 125 150 1 10 VDS, Drain-to-Source Voltage (V) 100 ID,Drain-to-Source Current (A) Fig 9. Typical Forward Transconductance vs. Drain Current 14.0 ID= 160A VGS, Gate-to-Source Voltage (V) Fig 10. Typical Capacitance vs.Drain-to-Source Voltage 300 250 ID, Drain Current (A) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 50 VDS= 32V VDS= 20V 200 150 100 50 0 100 150 200 250 300 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) T C , Case Temperature (°C) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature www.irf.com 5 AUIRF7739L2TR/TR1 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100µsec 1100 EAS , Single Pulse Avalanche Energy (mJ) 1000 900 800 700 600 500 400 300 200 100 0 25 50 75 100 ID, Drain-to-Source Current (A) ID 29A 46A BOTTOM 160A TOP 100 DC 10 Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10msec 1msec 10 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 13. Maximum Safe Operating Area 10 Thermal Response ( Z thJC ) °C/W Fig 14. Maximum Avalanche Energy vs. Temperature 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 0.1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.1080 0.6140 0.4520 1.47e-05 0.000171 0.053914 0.006099 τi (sec) 0.01 τ1 τ2 τ3 τ4 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri 0.036168 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming∆ Tj = 150°C and T start =25°C (Single Pulse) 0.01 0.05 0.10 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25°C and ∆ T start = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 16. Typical Avalanche Current vs.Pulsewidth 6 www.irf.com AUIRF7739L2TR/TR1 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 1.0% Duty Cy cle ID = 160A Notes on Repetitive Avalanche Curves , Figures 13, 14: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav V(BR)DSS 15V tp DRIVER VDS L RG 20V D.U.T IAS tp + - VDD VGS A 0.01Ω I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds Vgs L 0 DUT 20K 1K S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 19a. Gate Charge Test Circuit VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19b. Gate Charge Waveform VDS 90% RD D.U.T. + - VDD 10% VGS td(on) tr t d(off) tf Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms www.irf.com 7 AUIRF7739L2TR/TR1 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ - +  RG * • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD ** + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Automotive DirectFET™ Board Footprint, L8 (Large Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G = GATE D = DRAIN S = SOURCE D D S S S S D G S S S S D D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com AUIRF7739L2TR/TR1 Automotive DirectFET™ Outline Dimension, L8 Outline (LargeSize Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations Automotive DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com 9 AUIRF7739L2TR/TR1 Automotive DirectFET™ Tape & Reel Dimension (Showing component orientation). Note: For the most current drawing please refer to IR website at http://www.irf.com/package Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A. ‡ Pulse width ≤ 400µs; duty cycle ≤ 2%. ˆ Used double sided cooling, mounting pad with large heatsink. ‰ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š Rθ is measured at TJ of approximately 90°C. 10 www.irf.com AUIRF7739L2TR/TR1 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. 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