AUIRFB3207

AUTOMOTIVE GRADE PD - 96322 HEXFET® Power MOSFET Features l l l l l l l AUIRFB3207 75V 3.6mΩ 4.5mΩ 170A 75A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) G S c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G S D G TO-220AB AUIRFB3207 D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dV/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current Max. d Ãd e 170 120 75 720 300 2.0 ± 20 910 See Fig. 14, 15, 16a, 16b, 5.8 -55 to + 175 300 10lb in (1.1N m) ™ ™ Units A W W/°C V mJ A mJ V/ns °C Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw f x x Thermal Resistance RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 j Parameter Typ. ––– 0.50 ––– Max. 0.50 ––– 62 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/21/10 AUIRFB3207 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs RG IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Gate Input Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 75 ––– ––– 2.0 150 ––– ––– ––– ––– ––– ––– ––– 0.069 ––– 3.6 4.5 ––– 4.0 ––– ––– 1.2 ––– ––– 20 ––– 250 ––– 200 ––– -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A V VDS = VGS, ID = 250µA S VDS = 50V, ID = 75A Ω f = 1MHz, open drain VDS = 75V, VGS = 0V µA VDS = 75V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V g d Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 180 48 68 29 120 68 74 7600 710 390 920 1010 260 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 75A VDS = 60V VGS = 10V VDD = 48V ID = 75A RG = 2.6Ω VGS = 10V VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V , See Fig.11 VGS = 0V, VDS = 0V to 60V , See Fig. 5 g g ns h ià pF Diode Characteristics Parameter IS ISM VSD trr Qrr IRRM ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– 170 ––– Conditions MOSFET symbol D ™ A Ãdi 720 showing the integral reverse G S Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time ––– ––– 1.3 V ––– 42 63 ns ––– 49 74 ––– 65 98 nC TJ = 125°C ––– 92 140 ––– 2.6 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C VR = 64V, TJ = 125°C IF = 75A di/dt = 100A/µs TJ = 25°C g g Notes:  Calculated continuous current based on maximum allowable junction † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . temperature. Package limitation current is 75A. ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as ‚ Repetitive rating; pulse width limited by max. junction temperature. Coss while VDS is rising from 0 to 80% VDSS . ƒ Limited by TJmax, starting TJ = 25°C, L = 0.33mH ˆ Rθ is measured at TJ approximately 90°C. RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com AUIRFB3207 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Class M4(425V) (per AEC-Q101-002) Class H2(4000V) (per AEC-Q101-001) Class C5 (1125V) (per AEC-Q101-005) Yes Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFB3207 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 100 10 4.5V ≤ 60µs PULSE WIDTH Tj = 175°C 10 0.1 1 10 100 4.5V 1 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 2.5 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 75A 2.0 ID, Drain-to-Source Current(Α) TJ = 175°C 100.0 VGS = 10V TJ = 25°C 1.5 10.0 1.0 VDS = 50V ≤ 60µs PULSE WIDTH 1.0 4.0 5.0 6.0 7.0 8.0 9.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS, Gate-to-Source Voltage (V) ID= 75A 16 10000 VDS = 60V VDS= 38V C, Capacitance (pF) Ciss 12 6000 8 4000 4 2000 Coss Crss 1 10 100 0 0 0 40 80 120 160 200 240 280 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com AUIRFB3207 1000.0 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100.0 TJ = 175°C 1000 100 100µsec 10.0 10 1.0 TJ = 25°C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Tc = 25°C Tj = 175°C Single Pulse 1 10 1msec 10msec DC 100 1000 0.1 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 Limited By Package ID, Drain Current (A) Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage 100 150 90 100 80 50 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 70 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature EAS, Single Pulse Avalanche Energy (mJ) 3.0 Fig 10. Drain-to-Source Breakdown Voltage 4000 2.5 3000 ID 12A 16A BOTTOM 75A TOP 2.0 Energy (µJ) 1.5 2000 1.0 1000 0.5 0.0 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C) Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent www.irf.com 5 AUIRFB3207 1 D = 0.50 Thermal Response ( ZthJC ) 0.1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ1 τ2 τ 0.01 Ri (°C/W) τi (sec) 0.2151 0.001175 0.2350 0.017994 0.001 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs.Pulsewidth 1000 EAR , Avalanche Energy (mJ) 800 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 600 400 200 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Starting TJ , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 6 www.irf.com AUIRFB3207 5.0 16 VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 ID = 1.0A ID = 1.0mA ID = 250µA IRRM - (A) 14 12 10 8 6 4 2 IF = 30A VR = 64V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 TJ , Temperature ( °C ) dif / dt - (A / µs) Fig 16. Threshold Voltage Vs. Temperature 16 14 12 10 8 6 4 2 IF = 45A VR = 64V TJ = 125°C TJ = 25°C Fig. 17 - Typical Recovery Current vs. dif/dt 400 300 QRR - (nC) IRRM - (A) 200 100 IF = 30A VR = 64V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) dif / dt - (A / µs) Fig. 18 - Typical Recovery Current vs. dif/dt 400 Fig. 19 - Typical Stored Charge vs. dif/dt 300 QRR - (nC) 200 100 IF = 45A VR = 64V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com 7 AUIRFB3207 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 22a. Unclamped Inductive Test Circuit LD VDS Fig 22b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 8 www.irf.com AUIRFB3207 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRFB3207 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code www.irf.com Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 AUIRFB3207 Ordering Information Base part AUIRFB3207 Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRFB3207 10 www.irf.com AUIRFB3207 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11