AUIRFR2607Z

PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET® Power MOSFET D Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 75V 17.6mΩ 22mΩ 45A k 42A RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak AUIRFR2607Z G D S G D S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 45 32 42 180 110 0.72 ± 20 96 96 See Fig.12a, 12b, 15, 16 -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) k A Pulsed Drain Current Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy (Thermally limited) EAS (Tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB mount) RθJA Junction-to-Ambient ™ Ù h d W W/°C V mJ A mJ g y y j i Typ. ––– ––– ––– Max. 1.38 50 110 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/24/10 AUIRFR2607Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 ––– ––– 2.0 36 ––– ––– ––– ––– ––– 0.074 17.6 ––– ––– ––– ––– ––– ––– ––– ––– 22 4.0 ––– 20 250 200 -200 V V/°C mΩ V S µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 30A VDS = VGS, ID = 50µA VDS = 25V, ID = 30A VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 34 8.9 14 14 59 39 28 4.5 7.5 1440 190 110 720 130 230 51 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– nC ID = 30A VDS = 60V VGS = 10V VDD = 38V ID = 30A RG = 15 Ω VGS = 10V Conditions e e ns pF Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 60V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V f Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 30 28 45 k Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V TJ = 25°C, IF = 30A, VDD = 38V di/dt = 100A/µs A Ù 180 1.3 45 42 V ns nC e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) e Notes  through ‰ are on page 3 2 www.irf.com AUIRFR2607Z Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D PAK MSL1 Class M4(425V) (per AEC-Q101-002) Class H1B(1000V) (per AEC-Q101-001) Class C5(1125V) (per AEC-Q101-005) Yes Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L = 0.21mH RG = 25Ω, IAS = 30A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . … Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population. 100% tested to this value in production. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 ˆ Rθ is measured at TJ approximately 90°C ‰ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A www.irf.com 3 AUIRFR2607Z 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 10 4.5V 1 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C ≤ 60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 100 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 60 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current(Α) 50 40 30 20 10 0 0 10 20 TJ = 25°C 100.0 TJ = 175°C 10.0 TJ = 175°C 1.0 TJ = 25°C VDS = 20V ≤ 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VDS = 10V 380µs PULSE WIDTH 30 40 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 4 www.irf.com AUIRFR2607Z 2400 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1600 20 VGS, Gate-to-Source Voltage (V) ID= 30A VDS = 60V VDS= 30V VDS= 12V 2000 16 C, Capacitance (pF) Ciss 12 1200 8 800 4 FOR TEST CIRCUIT SEE FIGURE 13 400 Coss Crss 0 1 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) ISD, Reverse Drain Current (A) 100.0 100 100µsec 10 TJ = 175°C 10.0 1.0 TJ = 25°C VGS = 0V 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 10msec 1msec DC 1000 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRFR2607Z 50 LIMITED BY PACKAGE 40 ID , Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID = 30A 2.0 VGS = 10V 30 1.5 20 10 1.0 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 0.1 R1 R1 τ2 R2 R2 τC τ τ1 τ2 Ri (°C/W) τi (sec) 0.71826 0.000423 0.66173 0.004503 0.01 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFR2607Z EAS, Single Pulse Avalanche Energy (mJ) 15V 400 VDS L DRIVER 300 ID 3.5A 4.8A BOTTOM 30A TOP RG 20V VGS D.U.T IAS tp + V - DD A 200 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 5.0 VG 4.5 4.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 50µA Charge Fig 13a. Basic Gate Charge Waveform 3.5 3.0 L 0 2.5 DUT 1K VCC 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature www.irf.com 7 AUIRFR2607Z 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 EAR , Avalanche Energy (mJ) 80 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 30A 60 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature 8 www.irf.com AUIRFR2607Z Driver Gate Drive P.W. Period VGS=10V D.U.T + P.W. Period D= ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFR2607Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Part Number AUFR2607Z IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFR2607Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. www.irf.com 11 AUIRFR2607Z Ordering Information Base part AUIRFR2607Z Package Type DPak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Quantity 75 2000 3000 3000 Complete Part Number AUIRFR2607Z AUIRFR2607ZTR AUIRF2607ZTRL AUIRF2607ZTRR 12 www.irf.com AUIRFR2607Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. 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Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13