AUIRFR3710ZTR

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID (Silicon Limited) 100V 18mΩ 56A 42A G S ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S D-Pak AUIRFR3710Z G G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Max. 56 39 42 220 140 0.95 ± 20 150 200 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A ™ Ù h d W W/°C V mJ A mJ °C g 300 Thermal Resistance RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient j Parameter Typ. ––– ––– ––– Max. 1.05 50 110 Units °C/W i HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 02/10/2010 AUIRFR3710Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 ––– ––– 2.0 39 ––– ––– ––– ––– ––– 0.088 15 ––– ––– ––– ––– ––– ––– ––– ––– 18 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 33A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 33A µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 69 15 25 14 43 53 42 4.5 7.5 2930 290 180 1200 180 430 100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 33A VDS = 80V VGS = 10V VDD = 50V ID = 33A RG = 6.8 Ω VGS = 10V Between lead, e e ns D nH 6mm (0.25in.) from package G pF S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time f Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 35 41 56 A 220 1.3 53 62 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù S p-n junction diode. TJ = 25°C, IS = 33A, VGS = 0V TJ = 25°C, IF = 33A, VDD = 50V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com AUIRFR3710Z Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C3 AEC-Q101-005 Yes MSL1 Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFR3710Z 1000 TOP VGS 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V 4.0V 1000 TOP VGS 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V 4.0V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 4.0V 10 10 4.0V 60µs PULSE WIDTH Tj = 25°C 0.1 1 10 100 1 60µs PULSE WIDTH Tj = 175°C 0.1 1 10 100 1 0.1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) T J = 175°C 100 80 T J = 25°C 60 TJ = 175°C 40 10 TJ = 25°C VDS = 25V 60µs PULSE WIDTH 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate-to-Source Voltage (V) 20 V DS = 10V 0 0 10 20 30 40 50 60 70 80 ID,Drain-to-Source Current (A) 1.0 Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 4 www.irf.com AUIRFR3710Z 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED 12.0 ID= 33A VGS, Gate-to-Source Voltage (V) C rss = C gd 10000 C oss = C ds + C gd 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance(pF) VDS= 80V VDS= 50V VDS= 20V Ciss 1000 Coss Crss 100 10 1 10 100 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10.00 10 100µsec 1.00 T J = 25°C 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 1msec 10msec 0.10 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 1.8 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) ce Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRFR3710Z 60 50 ID, Drain Current (A) 3.0 Limited By Package RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 56A VGS = 10V 2.5 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.576 0.000540 0.249 0.224 0.001424 0.007998 0.01 τ1 τ2 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFR3710Z 15V 700 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 600 500 400 300 200 100 0 25 50 75 100 ID TOP 3.4A 4.8A BOTTOM 33A RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD 4.0 Charge VGS(th) Gate threshold Voltage (V) 3.0 Fig 13a. Basic Gate Charge Waveform ID = 250µA 2.0 L 0 DUT 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature www.irf.com 7 AUIRFR3710Z 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.05 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 200 EAR , Avalanche Energy (mJ) 150 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 33A 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRFR3710Z D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ - +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFR3710Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AUFR3710Z IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFR3710Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: … Limited by TJmax , see Fig.12a, 12b, 15, 16 for max. junction temperature. (See fig. 11). typical repetitive avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.28mH † This value determined from sample failure population, starting RG = 25Ω, IAS = 33A, VGS =10V. Part not TJ = 25°C, L = 0.28mH, RG = 25Ω, IAS = 33A, VGS =10V. recommended for use above this value. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. application note #AN-994. „ Coss eff. is a fixed capacitance that gives the ˆ Rθ is measured at TJ approximately 90°C. same charging time as Coss while VDS is rising from 0 to 80% VDSS .  Repetitive rating; pulse width limited by www.irf.com 11 AUIRFR3710Z Ordering Information Base part AUIRFR3710Z Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRFR3710Z AUIRFR3710ZTR AUIRFR3710ZTRL AUIRFR3710ZTRR 12 www.irf.com AUIRFR3710Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13