AUIRFR4105ZTRL

PD - 97544 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features ● ● ● ● ● ● ● AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S D-Pak AUIRFR4105Z G D G I-Pak AUIRFU4105Z S D G S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw Max. 30 21 120 48 0.32 ± 20 29 46 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/°C V mJ A mJ °C ™ Ù h d g Thermal Resistance RθJC RθJA RθJA 300 10 lbf in (1.1N m) y y Junction-to-Case j Parameter Typ. ––– ––– ––– Max. 3.12 50 110 Units °C/W Junction-to-Ambient (PCB mount) Junction-to-Ambient i HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/23/2010 AUIRFR/U4105Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 ––– ––– 2.0 16 ––– ––– ––– ––– ––– 0.053 19 ––– ––– ––– ––– ––– ––– ––– ––– 24.5 4.0 ––– 20 250 200 -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 18A V VDS = VGS, ID = 250µA S VDS = 15V, ID = 18A µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 18 5.3 7.0 10 40 26 24 4.5 7.5 740 140 74 450 110 180 27 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 18A VDS = 44V VGS = 10V VDD = 28V ID = 18A RG = 24.5 Ω VGS = 10V Between lead, e e ns D nH 6mm (0.25in.) from package G pF S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time f Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 19 14 30 A 120 1.3 29 21 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 18A, VGS = 0V TJ = 25°C, IF = 18A, VDD = 28V di/dt = 100A/µs Ù e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com AUIRFR/U4105Z Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK I-PAK MSL1 MSL1 Class M2 (200V) AEC-Q101-002 Class H1A (500V) AEC-Q101-001 Class C5 (1125V) AEC-Q101-005 Yes Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFR/U4105Z 1000 TOP VGS 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 10 1 4.5V 60µs PULSE WIDTH Tj = 25°C 4.5V 60µs PULSE WIDTH Tj = 175°C 1 0.1 0 0.1 0.1 0 1 10 100 100 1 10 100 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 30 Gfs, Forward Transconductance (S) T J = 175°C 25 20 15 10 5 0 0 10 20 30 40 ID, Drain-to-Source Current (A) T J = 25°C ID, Drain-to-Source Current (Α) 100 T J = 175°C 10 T J = 25°C 1 VDS = 25V 60µs PULSE WIDTH 0 4 5 6 7 8 9 10 VDS = 8.0V 380µs PULSE WIDTH VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 4 www.irf.com AUIRFR/U4105Z 1200 1000 C rss = C gd VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd 20 ID= 18A VDS= 44V VDS= 28V VDS= 11V 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 200 Coss Crss 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175°C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µsec 1 Tc = 25°C Tj = 175°C Single Pulse 1 10 1.0 T J = 25°C VGS = 0V 1msec 10msec 100 1000 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V) 0.1 VDS , Drain-toSource Voltage (V) nce Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRFR/U4105Z 30 2.5 25 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 18A VGS = 10V 2.0 ID , Drain Current (A) 20 15 1.5 10 1.0 5 0 25 50 75 100 125 150 175 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) T J , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 τJ τ1 τ2 Ri (°C/W) τi (sec) 1.100 0.000174 1.601 0.000552 0.418 0.007193 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFR/U4105Z 120 15V EAS, Single Pulse Avalanche Energy (mJ) VDS L DRIVER 100 ID 2.0A 3.5A BOTTOM 18A TOP RG VGS 20V D.U.T IAS tp 80 + V - DD A 60 0.01Ω 40 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 20 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD 4.5 VGS(th) Gate threshold Voltage (V) 4.0 Charge 3.5 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. ID = 250µA 3.0 50KΩ 12V .2µF .3µF 2.5 D.U.T. VGS 3mA + V - DS 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) IG ID Current Sampling Resistors www.irf.com Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 7 AUIRFR/U4105Z 100 Duty Cycle = Single Pulse Avalanche Current (A) 10 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 30 EAR , Avalanche Energy (mJ) 25 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 18A 20 15 10 5 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 8 Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com AUIRFR/U4105Z D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ - +  RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs RD V DS V GS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + -V DD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFR/U4105Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AUFR4105Z IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFR/U4105Z I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak Part Marking Information Part Number AUFU4105Z IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRFR/U4105Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.18mH † This value determined from sample failure population, RG = 25Ω, IAS = 18A, VGS =10V. Part not starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 18A, VGS =10V. recommended for use above this value. ‡ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. application note #AN-994. „ Coss eff. is a fixed capacitance that gives the ˆ Rθ is measured at TJ approximately 90°C. same charging time as Coss while VDS is rising from 0 to 80% VDSS .  Repetitive rating; pulse width limited by 12 www.irf.com AUIRFR/U4105Z Ordering Information Base part AUIRFR4105Z Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Complete Part Number Quantity 75 2000 3000 3000 75 AUIRFR4105Z AUIRFR4105ZTR AUIRFR4105ZTRL AUIRFR4105ZTRR AUIRFU4105Z AUIRFU4105Z Ipak www.irf.com 13 AUIRFR/U4105Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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