AUIRFR6215TRR

AUTOMOTIVE GRADE PD-96302 Features P-Channel Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D HEXFET® Power MOSFET AUIRFR6215 -150V 0.295: -13A V(BR)DSS RDS(on) max. ID D G S Description Specifically designed for Automotive applications of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. S D G D-Pak AUIRFR6215 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. -13 -9.0 -44 110 0.71 ± 20 310 -6.6 11 5.0 -55 to + 175 300 Units A W W/°C V mJ A mJ V/ns °C ch ch dh e ch Thermal Resistance Parameter RθJC Junction-to-Case Junction-to-Ambient(PCB mount) RθJA RθJA Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ hj Typ. Max. 1.4 50 110 Units °C/W i ––– ––– ––– www.irf.com 1 04/13/10 AUIRFR6215 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) gfs IDSS IGSS Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units -150 ––– ––– ––– -2.0 3.6 ––– ––– ––– ––– ––– -0.20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.295 0.58 -4.0 ––– -25 -250 100 -100 V Conditions VGS = 0V, ID = -250µA V/°C Reference to 25°C, ID = -1mA Ω V S µA nA VGS = -10V, ID = -6.6A VGS = -10V, ID J VDS = VGS, ID = -250µA VDS = -50V, ID = -6.6A VDS = -150V, VGS = 0V VGS = 20V VGS = -20V ™ f = -6.6A f T = 150°C h VDS = -120V, VGS = 0V, TJ = 150°C Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 36 53 37 4.5 7.5 860 220 130 66 8.1 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nH ns nC ID = -6.6A VDS =-120V Conditions VGS = -10V, See Fig 6 and 13 VDD = -75V ID = -6.6A RG = 6.8Ω RD = 12Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = -25V ƒ = 1.0MHz, See Fig.5 G fh fh D S h D Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 160 1.2 -13 A -44 -1.6 240 1.7 V ns Conditions MOSFET symbol showing the integral reverse G S Ùh nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) p-n junction diode. TJ = 25°C, IS =-6.6A, VGS = 0V TJ = 25°C, IF =-6.6A di/dt = 100A/µs f fh Notes  through ˆ are on page 10 2 www.irf.com AUIRFR6215 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D PAK Machine Model Human Body Model Charged Device Model MSL1 Class M4 AEC-Q101-002 Class H3A AEC-Q101-001 Class C5 AEC-Q101-005 Yes Moisture Sensitivity Level ESD RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFR6215 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 -ID , Drain-to-Source Current (A) 10 -ID , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 20µs PULSE WIDTH TC = 175°C 1 10 -4.5V 1 1 10 20µs PULSE WIDTH Tc = 25°C A 100 1 100 A -V , Drain-to-Source Voltage (V) DS -V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) 100 2.5 I D = -11A -ID , Drain-to-Source Current (A) 2.0 TJ = 25°C TJ = 175°C 10 1.5 1.0 0.5 1 4 5 6 7 VDS = -50V 20µs PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = -10V 80 100 120 140 160 180 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com AUIRFR6215 2000 1600 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = -6.6A 16 VDS = -120V VDS = -75V VDS = -30V C, Capacitance (pF) Ciss 1200 12 Coss 800 8 Crss 400 4 0 1 10 100 A 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10µs 10 TJ = 175°C TJ = 25°C -I D , Drain Current (A) 10 100µs 1 1ms 0.1 0.2 0.6 1.0 1.4 VGS = 0V A 1 1 TC = 25°C TJ = 175°C Single Pulse 10 100 10ms 1.8 1000 A -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRFR6215 14 12 VDS VGS RG -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -ID , Drain Current (A) 10 8 6 4 2 VGS Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0 10% 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 Thermal Response (ZthJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 S INGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t /t t 1 t2 1 2 0.01 0.00001 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - V DD A 1 AUIRFR6215 EAS , Single Pulse Avalanche Energy (mJ) VDS L 800 TOP BOTTOM 600 RG D.U.T IAS -20V DRIVER 0.01Ω VDD A ID -2.7A -4.7A -6.6A tp 400 15V 200 Fig 12a. Unclamped Inductive Test Circuit I AS 0 25 50 75 100 125 150 175 A Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + QGS QGD D.U.T. - -10V VDS 7 AUIRFR6215 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRFR6215 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AURFR6215 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFR6215 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 14mH R G = 25Ω, IAS = -6.6A. (See Fig.12) ƒ ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2% … This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact † Uses IRF6215 data and test conditions ‡ When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994 ˆ Rθ is measured at TJ approximately 90°C. 10 www.irf.com AUIRFR6215 Ordering Information Base part AUIRFR6215 AUIRFR6215 AUIRFR6215 AUIRFR6215 Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRFR6215 AUIRFR6215TR AUIRFR6215TRL AUIRFR6215TRR www.irf.com 11 AUIRFR6215 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com