AUIRFS4310TRR

AUTOMOTIVE GRADE PD - 96324 AUIRFS4310 AUIRFSL4310 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D V(BR)DSS 100V 5.6mΩ 130A c 75A RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) 7.0mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G D2Pak AUIRFS4310 G D S D G TO-262 AUIRFSL4310 S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dV/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. d Ãd e 130 92 75 550 300 2.0 ± 20 980 See Fig. 14, 15, 22a, 22b, 14 -55 to + 175 300 (1.6mm from case) 10lb in (1.1N m) ™ ™ Units A f W W/°C V mJ A mJ V/ns °C x x Thermal Resistance RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) k Parameter Typ. Max. 0.50 40 Units °C/W j ––– ––– HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/20/10 AUIRFS/SL4310 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs RG IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Gate Input Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 100 ––– ––– ––– 0.064 ––– ––– 5.6 7.0 2.0 ––– 4.0 160 ––– ––– ––– 1.4 ––– ––– ––– 20 ––– ––– 250 ––– ––– 200 ––– ––– -200 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A V VDS = VGS, ID = 250µA S VDS = 50V, ID = 75A Ω f = 1MHz, open drain VDS = 100V, VGS = 0V µA VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V g d Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) ––– 170 ––– 46 ––– 62 ––– 26 ––– 110 ––– 68 ––– 78 ––– 7670 ––– 540 ––– 280 ––– 650 ––– 720.1 250 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 75A VDS = 80V VGS = 10V VDD = 65V ID = 75A RG = 2.6Ω VGS = 10V VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V VGS = 0V, VDS = 0V to 80V g g ns pF i, See Fig.11 h, See Fig. 5 D Diode Characteristics Parameter IS ISM VSD trr Qrr IRRM ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– 130 ––– ™ Conditions MOSFET symbol showing the integral reverse Ãdi A Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C VR = 85V, ––– 45 68 ns TJ = 125°C IF = 75A ––– 55 83 di/dt = 100A/µs TJ = 25°C ––– 82 120 nC TJ = 125°C ––– 120 180 ––– 3.3 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 550 G g S g Notes:  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.35mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). Coss while VDS is rising from 0 to 80% VDSS. For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ approximately 90°C. 2 www.irf.com AUIRFS/SL4310 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-262 D PAK 2 Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant N/A MSL1 Class M4(425V) (per AEC-Q101-002) Class H2(4000V) (per AEC-Q101-001) Class C4 (1000V) (per AEC-Q101-005) Yes ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFS/SL4310 1000 TOP 1000 ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP BOTTOM VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 100 10 4.5V 1 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 10 100 0.1 1 4.5V ≤ 60µs PULSE WIDTH Tj = 175°C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 Fig 2. Typical Output Characteristics 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current(Α) 2.5 ID = 75A VGS = 10V 100 TJ = 175°C 2.0 10 1.5 TJ = 25°C VDS = 50V ≤ 60µs PULSE WIDTH 1.0 1 3.0 4.0 5.0 6.0 7.0 8.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS, Gate-to-Source Voltage (V) ID= 75A VDS = 80V VDS= 50V VDS= 20V 10000 16 C, Capacitance (pF) Ciss 12 6000 8 4000 4 2000 Coss Crss 1 10 100 0 0 0 40 80 120 160 200 240 280 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com AUIRFS/SL4310 1000.0 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) TJ = 175°C 100.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100 100µsec 10.0 TJ = 25°C 1.0 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tc = 25°C Tj = 175°C Single Pulse 1 10 1msec 10msec DC 100 1000 0.1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage V(BR)DSS , Drain-to-Source Breakdown Voltage 140 120 ID, Drain Current (A) 120 Fig 8. Maximum Safe Operating Area Limited By Package 100 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 115 110 105 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Fig 9. Maximum Drain Current vs. Case Temperature EAS, Single Pulse Avalanche Energy (mJ) 4.0 3.5 3.0 TJ , Junction Temperature (°C) Fig 10. Drain-to-Source Breakdown Voltage 2400 2000 ID 12A 17A BOTTOM 75A TOP Energy (µJ) 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 1600 1200 800 400 0 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C) Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent www.irf.com 5 AUIRFS/SL4310 1 D = 0.50 Thermal Response ( ZthJC ) 0.1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ1 τ2 τ 0.01 Ri (°C/W) τi (sec) 0.1962 0.00117 0.2542 0.016569 0.001 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse Avalanche Current (A) 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 0.01 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 1000 EAR , Avalanche Energy (mJ) 800 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 600 400 200 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Starting TJ , Junction Temperature (°C) Fig 15. Maximum Avalanche Energy vs. Temperature 6 www.irf.com AUIRFS/SL4310 5.0 20 VGS(th) Gate threshold Voltage (V) 4.0 ID = 1.0A ID = 1.0mA ID = 250µA 16 3.0 IRRM - (A) 12 8 IF = 30A VR = 85V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 2.0 4 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 0 TJ , Temperature ( °C ) dif / dt - (A / µs) Fig 16. Threshold Voltage Vs. Temperature 20 Fig. 17 - Typical Recovery Current vs. dif/dt 500 16 400 QRR - (nC) IRRM - (A) 12 300 8 IF = 45A VR = 85V TJ = 125°C 0 TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 200 IF = 30A VR = 85V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 4 100 0 dif / dt - (A / µs) dif / dt - (A / µs) Fig. 18 - Typical Recovery Current vs. dif/dt 500 Fig. 19 - Typical Stored Charge vs. dif/dt 400 QRR - (nC) 300 200 IF = 45A VR = 85V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 100 dif / dt - (A / µs) www.irf.com Fig. 20 - Typical Stored Charge vs. dif/dt 7 AUIRFS/SL4310 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 22a. Unclamped Inductive Test Circuit LD VDS Fig 22b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 90% VDS 10% VGS td(on) tr td(off) tf Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr 8 Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com AUIRFS/SL4310 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRFSL4310 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFS/SL4310 D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRFS4310 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFS/SL4310 D2Pak (TO-263AB) Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 www.irf.com 11 AUIRFS/SL4310 Ordering Information Base part number AUIRFSL4310 AUIRFS4310 Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRFSL4310 AUIRFS4310 AUIRFS4310TRL AUIRFS4310TRR 12 www.irf.com AUIRFS/SL4310 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 13