AUIRFZ44ZS

PD - 97543 AUTOMOTIVE GRADE Features ● ● ● ● ● AUIRFZ44Z AUIRFZ44ZS HEXFET® Power MOSFET ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) max. ID D D 55V 13.9mΩ 51A G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S G D S TO-220AB AUIRFZ44Z D2Pak AUIRFZ44ZS G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (See Fig. 9) Pulsed Drain Current Max. 51 36 200 80 0.53 ± 20 86 105 See Fig.12a,12b,15,16 -55 to + 175 300 10 lbf•in (1.1N•m) Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw W W/°C V mJ A mJ °C c i d h Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case k Parameter Typ. ––– 0.50 ––– ––– Max. 1.87 ––– 62 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) j HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/23/2010 AUIRFZ44Z/ZS Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 55 ––– ––– 2.0 22 ––– ––– ––– ––– Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.054 11.1 ––– ––– ––– ––– ––– ––– Typ. 29 7.2 12 14 68 33 41 4.5 7.5 1420 240 130 830 190 300 Max. ––– ––– 13.9 4.0 ––– 20 250 200 -200 Max. 43 11 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units V V/°C mΩ V S µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A VDS = VGS, ID = 250µA VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Units nC Conditions ID = 31A VDS = 44V VGS = 10V VDD = 28V ID = 31A RG = 15Ω VGS = 10V Between lead, ns f f nH D 6mm (0.25in.) from package pF G and center of die contact S VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. ––– ––– ––– ––– ––– Typ. ––– ––– ––– 23 17 Max. 51 200 1.2 35 26 Units A Conditions MOSFET symbol showing the integral reverse G D Ù V ns nC p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f f S Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L =0.18mH, RG = 25Ω, IAS = 31A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 31A, di/dt ≤ 840A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ‡ This value determined from sample failure population, starting ˆ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is rated at TJ of approximately 90°C. TJ = 25°C, L =0.18mH, RG = 25Ω, IAS = 31A, VGS =10V. 2 www.irf.com AUIRFZ44Z/ZS Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB N/A N/A MSL1 Class M2 (200V) AEC-Q101-002 Class H1A (500V) AEC-Q101-001 Charged Device Model Class C5 (1125V) AEC-Q101-005 Yes Moisture Sensitivity Level Machine Model Human Body Model TO-262 D Pak 2 ESD RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFZ44Z/ZS 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 4.5V 4.5V 1 0.1 1 ≤60µs PULSE WIDTH Tj = 25°C 10 1 100 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1000 Gfs, Forward Transconductance (S) 50 40 30 20 10 T J = 25°C ID, Drain-to-Source Current (Α) 100 TJ = 175°C 10 T J = 25°C T J = 175°C 1.0 2 4 6 VDS = 15V ≤60µs PULSE WIDTH 8 10 12 V DS = 10V 0 0 10 20 30 40 50 ID,Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 4 www.irf.com AUIRFZ44Z/ZS 10000 C oss = C ds + C gd VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 12.0 ID= 31A 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 44V VDS= 28V VDS= 11V C, Capacitance(pF) Ciss 1000 Coss Crss 100 1 10 100 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 175°C 10 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100µsec 1 T J = 25°C 0.10 VGS = 0V 0.0 0.5 1.0 1.5 2.0 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 1msec 10msec 0.01 100 1000 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRFZ44Z/ZS 55 50 45 ID, Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID = 31A VGS = 10V 2.0 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.8487 0.00044 0.6254 0.3974 0.00221 0.01173 τ1 τ2 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFZ44Z/ZS EAS , Single Pulse Avalanche Energy (mJ) 15V 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 VDS L DRIVER ID 3.8A 5.5A BOTTOM 31A TOP RG 20V VGS D.U.T IAS tp + V - DD A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD 4.0 VGS(th) Gate threshold Voltage (V) ID = 250µA 3.0 Charge Fig 13a. Basic Gate Charge Waveform 2.0 L 0 DUT 1K VCC 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRFZ44Z/ZS 100 Duty Cycle = Single Pulse Avalanche Current (A) 10 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 100 EAR , Avalanche Energy (mJ) 80 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 31A 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature 8 www.irf.com AUIRFZ44Z/ZS D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ - +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRFZ44Z/ZS TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRFZ44Z IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFZ44Z/ZS D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRFZ44ZS IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRFZ44Z/ZS D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRFZ44Z/ZS Ordering Information Base part AUIRFZ44Z AUIRFZ44ZS Package Type TO-220 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRFZ44Z AUIRFZ44ZS AUIRFZ44ZSTRL AUIRFZ44ZSTRR www.irf.com 13 AUIRFZ44Z/ZS IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR’s Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 14 www.irf.com