AUIRG7CH80K6B-M

AUTOMOTIVE GRADE PD - 96279 • • • • • • • • • • 100% Tested at Probe * Designed for Automotive Application** Solderable Front Metal Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C Short Circuit Rated Square RBSOA Positive VCE (on) Temperature Coefficient Tight Parameter Distribution AUIRG7CH80K6B-M C Features G E n-channel Applications • • Medium/High Power Inverters HEV/EV Inverter Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (on) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Enables Double side cooling and higher current density • Eliminates wire bonds and Improves Reliability Chip Type AUIRG7CH80K6B VCE 1200V ICn 200A Die Size 12 X 12 mm2 Package Wafer Mechanical Parameter Die Size Emiter Pad Size (Included Gate Pad) Gate Pad Size Area Total / Active Thickness Wafer Size Flat Position Maximum-Possible Chips per Wafer Passivation Frontside Front Metal Backside Metal Die Bond Reject Ink Dot Size Recommended Storage Environment Note: 12.075x12.075 See Die Drawing mm2 Round, 1mm diameter 144/114 140 µm 150 mm 0 Degrees 89 pcs Silicon Nitride Al (4µm), Ti (0.1µm), Ni (0.2µm), Ag (0.6µm) Al (0.1µm), Ti (0.1µm), Ni (0.4µm), Ag (0.6µm) Electrically conductive epoxy or solder 0.51mm min (black, center) Store in original container, in dry Nitrogen,