AUIRLR3410

PD - 97491 AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l l l l l l l AUIRLR3410 HEXFET® Power MOSFET D V(BR)DSS RDS(on) max. ID 100V 105mΩ 17A G S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D S D-Pak AUIRLR3410 G G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Max. 17 12 60 79 0.53 ± 16 150 9.0 7.9 5.0 -55 to + 175 300 Units A W W/°C V mJ A mJ V/ns °C ™ Ùg e dg ™g Thermal Resistance RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient j Parameter Typ. ––– ––– ––– Max. 1.9 50 110 Units °C/W i HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 04/12/2010 AUIRLR3410 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 ––– ––– ––– ––– 1.0 7.7 ––– ––– ––– ––– ––– ––– 0.122 ––– ––– 0.105 ––– 0.125 ––– 0.155 ––– 2.0 ––– ––– ––– 25 ––– 250 ––– 100 ––– -100 Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA Ω VGS = 10V, ID = 10A VGS = 5.0V, ID = 10A VGS = 4.0V, ID = 9.0A V VDS = VGS, ID = 250µA S VDS = 25V, ID = 9.0A µA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 150°C nA VGS = 16V VGS = -16V f f f g Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.2 53 30 26 4.5 7.5 800 160 90 34 4.8 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– nC Conditions ID = 9.0A VDS = 80V VGS = 5.0V VDD = 50V ID = 9.0A RG = 6.0 Ω VGS = 5.0V Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz fg fg D G S ns nH pF Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time g Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 140 740 17 A 60 1.3 210 1100 V ns nC Conditions MOSFET symbol showing the integral reverse G D Ù S p-n junction diode. TJ = 25°C, IS = 9.0A, VGS = 0V TJ = 25°C, IF = 9.0A di/dt = 100A/µs f fg Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig.11 ) ‚ VDD = 25V, starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12) ƒ ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Uses IRL530N data and test conditions. † This is applied for LS of D-PAK is measured between ‡ When mounted on 1" square PCB (FR-4 or G-10 lead and center of die contact Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ˆ Rθ is measured at Tj approximately 90°C. 2 www.irf.com AUIRLR3410 Qualification Information † Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C5 AEC-Q101-005 Yes MSL1 Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant ESD † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRLR3410 100 ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 10 10 2.5V 1 1 2.5V 20µs PULSE WIDTH T J = 25°C 1 10 0.1 0.1 100 A 0.1 0.1 20µs PULSE WIDTH T J = 175°C 1 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 I D , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 15A 2.5 2.0 1.5 1 1.0 0.5 0.1 2 3 4 5 6 V DS= 50V 20µs PULSE WIDTH 7 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com AUIRLR3410 1400 15 1200 C, Capacitance (pF) 1000 Ciss V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = 9.0A 12 V DS = 80V V DS = 50V V DS = 20V 800 9 600 Coss Crss 6 400 3 200 0 1 10 100 A 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175°C I D , Drain Current (A) 100 10 10µs TJ = 25°C 10 100µs 1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1 1 TC = 25°C TJ = 175°C Single Pulse 10 1ms 10ms 100 1.4 1000 A VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 AUIRLR3410 20 V DS VGS RD ID , Drain Current (A) 15 RG 5.0V D.U.T. + -VDD 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 5 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 TC , Case Temperature ( °C) 75 100 125 150 175 Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRLR3410 E AS , Single Pulse Avalanche Energy (mJ) 350 TOP 300 15V BOTTOM ID 3.7A 6.4A 9.0A 250 VDS L DRIVER 200 RG 10V D.U.T IAS tp + V - DD 150 A 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit 50 0 VDD = 25V 25 50 75 100 125 150 A 175 V(BR)DSS tp Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRLR3410 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRLR3410 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number AUIRLR3410 IR Logo YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRLR3410 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRLR3410 Ordering Information Base part AUIRLR3410 Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 75 2000 3000 3000 AUIRLR3410 AUIRLR3410TR AUIRLR3410TRL AUIRLR3410TRR www.irf.com 11 AUIRLR3410 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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