CPV364M4KPBF

Bulletin I-27256 09/06 CPV364M4KPbF IGBT SIP MODULE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125°C, VGE = 15V • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) • Totally Lead-Free and RoHs Compliant Short Circuit Rated UltraFast IGBT 1 Features 3 Q1 D1 9 4 D2 12 Q3 D3 15 10 D4 18 Q5 D5 16 6 Q2 Q4 Q6 D6 7 13 19 Product Summary Output Current in a Typical 20 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Isolated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 24 13 48 48 9.3 ±20 2500 63 25 -55 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf•in ( 0.55-0.8 N•m) Units V A μs V VRMS W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (DIODE) RθCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. ––– ––– 0.10 20 (0.7) Max. 2.2 3.7 ––– ––– Units °C/W g (oz) www.irf.com 1 CPV364M4KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 ––– ––– ––– ––– 3.0 ––– 11 ––– ––– ––– ––– ––– Typ. ––– 0.63 1.80 1.80 1.56 ––– -13 18 ––– ––– 1.3 1.2 ––– Max. Units Conditions ––– V VGE = 0V, IC = 250μA ––– V/°C VGE = 0V, IC = 1.0mA 2.3 IC = 13A VGE = 15V ––– V IC = 24A See Fig. 2, 5 1.73 IC = 13A, T J = 150°C 6.0 VCE = VGE, IC = 250μA ––– mV/°C VCE = VGE, IC = 250μA ––– S VCE = 100V, IC = 10A 250 μA VGE = 0V, VCE = 600V 3500 V GE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 15A See Fig. 13 1.6 IC = 15A, T J = 150°C ±100 n A VGE = ±20V VGE(th) ΔVGE(th)/ΔTJ gfe ICES V FM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. 110 14 49 50 30 110 91 0.56 0.28 0.84 — 47 30 250 150 1.28 7.5 1600 130 55 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 170 IC = 13A 21 nC VCC = 400V See Fig.8 74 V GE = 15V — — TJ = 25°C ns 170 IC = 13A, V CC = 480V 140 VGE = 15V, RG = 10 Ω — Energy losses include "tail" — mJ and diode reverse recovery 1.1 See Fig. 9,10, 18 — μs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , V CPK < 500V — TJ = 150°C, See Fig. 11,18 — IC = 13A, V CC = 480V ns — VGE = 15V, RG = 10 Ω — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 15A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 16 di/dt = 200Aμs 600 TJ = 125°C — A/ μ s TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com CPV364M4KPbF 18 16 14 5.27 4.10 3.51 2.93 2.34 1.76 1.17 0.59 0.00 12 10 8 6 4 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 150 °C I C , Collector-to-Emitter Current (A) T = 150 °C J 10 10 TJ = 25 °C T = 25 °C J 1 V GE = 15V 20µs PULSE WIDTH 1 10 1 V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com Total Output Power (kW) LOAD CURRENT (A) Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 4.68 3 CPV364M4KPbF 160 Maximum DC Collector Current (A) 4.0 140 120 100 80 60 40 20 0 0 5 TC, Case Temperature (°C) VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH 3.0 IC = 26A DC Square wave (D=0.50) 80% rated Vr applied 2.0 IC = 13A IC = 6.5A see note (2) 10 15 20 25 30 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P 0.05 DM 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t t 1 t2 1 /t 2 0.01 0.00001 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com CPV364M4KPbF 3000 2500 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 13A 16 C, Capacitance (pF) 2000 Cies 1500 12 8 1000 500 4 Coes Cres 1 10 100 0 0 0 20 40 60 80 100 120 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.5 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 480V VGE = 15V TJ = 25 ° C I C = 13A 10 RG = 10Ω Ohm VGE = 15V VCC = 480V IC = 26 A IC = 13 A 1 1.0 IC = 6.5 A 0.5 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG GGate Resistance (Ohm) R, , Gate Resistance ( Ω ) TJ , Junction Temperature ( ° ) C Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 CPV364M4KPbF 4.0 3.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE 10 Ω = Ohm = 150 °C = 480V = 15V 1000 VGE = 20V TJ = 125°C 100 2.0 SAFE OPERATING AREA 10 1.0 0.0 0 5 10 15 20 25 30 1 1 10 100 A 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Forward Voltage Drop - V FM (V) 6 www.irf.com CPV364M4KPbF 100 100 VR= 200V T J = 125°C T J = 25°C 80 VR = 200V TJ = 125°C TJ = 25°C I F = 30A t rr - (ns) I F = 30A 60 I IRRM - (A) 10 IF = 15A I F = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 800 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125°C TJ = 25°C 600 VR = 200V TJ = 125°C TJ = 25°C IF = 30A di(rec)M/dt - (A/µs) Q RR - (nC) 400 I F = 5.0A I F = 15A I F = 30A I F = 15A IF = 5.0A 200 0 100 di f /dt - (A/µs) 1000 100 100 di f /dt - (A/µs) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 CPV364M4KPbF 90% Vge +Vge Same type device as D.U.T. 10% Vce Vce 90% Ic Ic 5% Ic Ic 80% of Vce 430µF D.U.T. td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = ∫ trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 ∫ t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dt t3 ∫ t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com CPV364M4KPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 CPV364M4KPbF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10μH, RG = 10Ω (Figure 19) Pulse width ≤ 80μs; duty factor ≤ 0.1%. Pulse width 5.0μs, single shot. Case Outline — IMS-2 IMS-2 Package Outline (13 Pins) Dimensions in Millimeters and (inches) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 09/06 10 www.irf.com