FA38SA50LC

PD - 91615B FA38SA50LC HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 500V RDS(on) = 0.13Ω G ID = 38A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. S O T -2 2 7 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Max. 38 24 150 500 4.0 ± 20 580 38 50 16 -55 to + 150 2.5 (1.3N•M) Units A W W/°C V mJ A mJ V/ns °C kV Thermal Resistance Parameter RθJC RθCS Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. ––– 0.05 Max. 0.25 ––– Units °C/W www.irf.com 1 2/2/99 FA38SA50LC Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ls Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 500 ––– ––– 2.0 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 1.0mA ––– V/°C Reference to 25°C, ID = 1mA 0.13 Ω VGS = 10V, ID = 23A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 23A 50 VDS = 500V, VGS = 0V µA 500 VDS = 400V, VGS = 0V, TJ = 125°C 200 VGS = 20V nA -200 VGS = -20V 420 ID = 38A 55 nC VDS = 400V 220 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 250V ––– ID = 38A ns ––– RG = 10Ω (Internal) ––– RD = 8Ω, See Fig. 10 „ ––– nH Between lead, and center of die contact 6900 ––– VGS = 0V 1600 ––– pF VDS = 25V 580 ––– ƒ = 1.0MHz, See Fig. 5 Typ. ––– 0.66 ––– ––– ––– ––– ––– ––– ––– 280 37 150 42 340 200 330 5.0 Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol 38 ––– ––– showing the A integral reverse ––– ––– 150 p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 38A, VGS = 0V „ ––– 830 1300 ns TJ = 25°C, IF = 38A ––– 15 22 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 38A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ Starting TJ = 25°C, L = 0.80mH RG = 25Ω, IAS = 38A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com FA38SA50LC 1000 V GS 1 5V 10V 8.0V 7.0V 6.0V 5.5V 5.0V B OT T O M 4.5V TOP 1000 ID , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 10 4 .5V 1 1 10 2 0µ s P U LS E W ID TH T C = 25°C 4.5V A 10 1 10 20µs PULSE WIDTH TJ = 150 °C 100 100 VD S , Drain-to-So urce V olta g e (V ) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 ID = 38A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 100 2.0 TJ = 150 ° C 1.5 TJ = 25 ° C 10 1.0 0.5 1 4 5 6 V DS = 50V 20µs PULSE WIDTH 7 8 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 FA38SA50LC 16000 14000 12000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 38A VDS = 400V VDS = 250V VDS = 100V 16 C, Capacitance (pF) 10000 Ciss 8000 6000 4000 12 8 Coss Crss 4 2000 0 1 10 100 0 0 80 160 FOR TEST CIRCUIT SEE FIGURE 13 240 320 400 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 100 10us TJ = 150 ° C 10 100us 10 1ms TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1 TC = 25 °C TJ = 150 ° C Single Pulse 10 100 10ms 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com FA38SA50LC QG VDS VGS RD 10V QGS VG QGD D.U.T. + RG - VDD 10V Charge Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50KΩ 12V .2µF .3µF 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 FA38SA50LC 1200 EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP BOTTOM 1000 ID 17A 24A 38A VDS L D RIV E R 800 RG 20 V tp D .U .T IA S + - VD D A 600 0 .01 Ω 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com FA38SA50LC Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 FA38SA50LC SOT-227 Package Details 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) 4 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) -A 3 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) -B 1 7 .50 ( .29 5 ) 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 8.10 ( .3 19 ) 7.70 ( .3 03 ) 0 .25 ( .01 0 ) M C A M B M 2 .10 ( .08 2 ) 1 .90 ( .07 5 ) -C 0.1 2 ( .00 5 ) 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) 2 R FULL 1 5.00 ( .5 90 ) 4 1 K1 A2 H E XF R E D G E IG B T A1 K2 3 2 C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E C 4 1 S G HEXFET S D 3 2 Tube QUANTITY PER TU BE IS 1 0 M4 SREW AND W ASHE R IN CLUDED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 8 www.irf.com