FB180SA10

PD- 91651C FB180SA10 HEXFET® Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V RDS(on) = 0.0065W G ID = 180A S Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry. S O T -22 7 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG VISO Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew Max. 180 120 720 480 2.7 ± 20 700 180 48 5.7 -55 to + 150 2.5 1.3 Units A W W/°C V mJ A mJ V/ns °C kV N•m Thermal Resistance Parameter RqJC RqCS Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. ––– 0.05 Max. 0.26 ––– Units °C/W 1 www.irf.com 2/1/99 FB180SA10 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ls Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 ––– ––– 2.0 93 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 0.093 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.0065 W VGS = 10V, ID = 108A „ ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– S VDS = 25V, ID = 108A ––– 50 VDS = 100V, VGS = 0V µA ––– 500 VDS = 80V, VGS = 0V, TJ = 125°C ––– 200 VGS = 20V nA ––– -200 VGS = -20V 250 380 ID = 180A 40 60 nC VDS = 80V 110 165 VGS = 10.0V, See Fig. 6 and 13 „ 45 ––– VDD = 50V 351 ––– ID = 180A ns 181 ––– RG = 2.0W (Internal) 335 ––– RD = 0.27W See Fig. 10 „ , 5.0 ––– nH Between lead, and center of die contact ––– 10700 ––– VGS = 0V ––– 2800 ––– pF VDS = 25V ––– 1300 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 180 showing the A integral reverse ––– ––– 720 p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V „ ––– 300 450 ns TJ = 25°C, IF = 180A ––– 2.6 3.9 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ I £ 180A, di/dt £83A/µs, VDD £ V(BR)DSS, SD TJ £ 150°C ‚ Starting TJ = 25°C, L =43µH RG = 25W , IAS = 180A. (See Figure 12) „ Pulse width £ 300µs; duty cycle £ 2%. 2 www.irf.com FB180SA10 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 10 10 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 150 ° C R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 180A I D , Drain-to-Source Current (A) 2.0 100 1.5 TJ = 25 ° C 1.0 10 0.5 1 4 5 6 7 V DS = 25V 20µs PULSE WIDTH 8 9 10 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 FB180SA10 20000 C, Capacitance (pF) 15000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 180 A VDS = 80V VDS = 50V VDS = 20V 15 Ciss 10000 10 Coss 5000 Crss 5 0 1 10 100 0 0 50 100 150 200 FOR TEST CIRCUIT SEE FIGURE 13 250 300 350 400 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C 1000 10us I D , Drain Current (A) 100 10 100 100us 1ms TJ = 25 ° C 1 10 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com FB180SA10 200 175 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 150 125 100 75 -VDD 10V Pulse Width £ 1 µs Duty Factor £ 0.1 % Fig 10a. Switching Time Test Circuit 50 VDS 25 0 25 50 75 100 125 150 90% TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 FB180SA10 EAS , Single Pulse Avalanche Energy (mJ) 1500 1 5V 1200 ID 71A 100A BOTTOM 160A TOP VD S L D R IVE R 900 RG 20V D .U .T IA S tp + V - DD A 600 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit 300 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature ( ° C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com FB180SA10 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer ‚ - „ +  RG · · · · dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 FB180SA10 SOT-227 Package Details 4 .40 (.1 73 ) 4 .20 (.1 65 ) 4 38.3 0 ( 1.5 08 ) 37.8 0 ( 1.4 88 ) -A 3 6 .25 ( .246 ) 12.5 0 ( .49 2 ) 25 .7 0 ( 1 .012 ) 25 .2 0 ( .9 92 ) -B 1 7 .50 ( .295 ) 3 0.2 0 ( 1.18 9 ) 2 9.8 0 ( 1.17 3 ) 4X 2.1 0 ( .082 ) 1.9 0 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .08 2 ) 1.90 ( .07 5 ) -C0.12 ( .005 ) 12.30 ( .4 84 ) 11.80 ( .4 64 ) 2 R FU L L 15.00 ( .590 ) 4 1 K1 A2 H E X FR E D G E IG B T A1 K2 3 2 C H AM FE R 2 .00 ( .0 79 ) X 4 5 7 LE A D A S S IG M E NT S E C 4 1 G S H E XFET S D 3 2 Tube Q UANTITY PE R TUBE IS 1 0 M4 SR EW AND W ASHE R IN CLU DED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 8 www.irf.com