G150SPBK06P3H

PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE Product Summary Part Number G150SPBK06P3H VCE 600V IC 150A VCE(SAT) 2.3V Typ. 2.6V Max. G150SPBK06P3H HiRelTM INT-A-Pak 3 The HiRelTM I NT-A-Pak series are isolated near hermetic power modules which combine the latest IGBT and Soft Recovery Rectifier Technology. They use both high-speed and low Vce(sat) IGBT for ultra low thermal resistance.The G150SPBK06P3H consists of six IGBTs and six FREDs in a full-bridge configuration and has an SCR inrush current limiter. Features: n Rugged, Light Weight near Hermetic Package n n n n n n n n n n with Integrated Power Terminals Gen IV IGBT Technology Soft Recovery Rectifier Diodes Ultra Low Thermal Resistance Zener Gate Protection Diodes Very Low Conduction and Switching Losses -55°C to +125°C Operation Screening to meet the intent of MIL-PRF-38534 Short Circuit Capability 2.0 Ohms Series Gate Resistor High Altitude Operation, 85,000 Feet Above Sea Level at Rated Voltage Thermal-Mechanical Specifications Parameter IGBT Thermal Resistance, Junction to Case, per Switch c c Symbol Min -55 -55 - Typ 0.2 0.38 0.6 0.21 - Max 0.24 0.45 0.80 0.27 150 125 26 410 Units °C/W Inverter Bridge Diode Thermal Resistance, Junction to Case, per Switch Regen Diode Thermal Resistance, Junction to Case, per Switch SCR Thermal Resistance, Junction to Case Operating Junction Temperature Range Storage Temperature Range Screw Torque - Mounting Screw Torque - Terminals Module Weight c RthJC TJ TSTG T c °C in-lbs g ™ÃThermal Resistance measurements are at Steady State condition. www.irf.com 1 06/03/09 G150SPBK06P3H Absolute Ratings Module Characteristics Symbol VRMS TC TSTG Parameter Voltage Isolation Operating Case Temperature Storage Temperature Test Conditions t = 1 min @ sea level Terminals to Case (All terminals shorted together) Ratings 2,500 Units V -55 to +125 °C IGBT Characteristics Symbol VCE(BR) VCG VGE ICC ICM TSC TJ Parameter Collector to Gate Voltage Gate to Emitter Voltage Collector Current Continuous Collector Current Pulsed Short Circuit Withstand Time Operating Junction Temperature Test Conditions TJ = +25°C to +150°C VGE = 15V, TC = +25°C TP = 1.0ms, TC = +25°C VCE = 400V, VGE = 15V, TJ = +150°C Ratings 600 600 ±20 150 300 10 (min) -55 to +150 Units V A µs °C IGBT Collector to Emitter Breakdown Voltage VGE = 0V, TJ = +25°C to +150°C Diode Characteristics Symbol Parameter Test Conditions TJ = +125°C TC = +25°C TP = 1.0ms, TC = +25°C Ratings Units V A °C VDRM / VRRM Max. Repetitive Peak and Off-state Voltage IF Forward Current IFM TJ Forward Surge Current Operating Junction Temperature -55 to +150 c 300 c 150 600 SCR Characteristics Symbol Parameter Test Conditions TJ = +25°C TJ = +80°C 1/2 Cycle @ 60Hz Ratings 600 100 500 -55 to +150 Units V A °C VDRM / VRRM Max. Repetitive Peak and Off-state Voltage IT(DC) Max. Continuous Forward Current ITSM TJ Max. Peak Surge Current Operating Junction Temperature ™ÃCurrent ratings apply to the free wheeling diodes and not the regen diodes 2 www.irf.com G150SPBK06P3H Static Characteristics Module Symbol RI Parameter Insulation Resistance Test Conditions From all Pins to Case, V = 500VDC Min 10 Typ - Max - Units MΩ IGBT Symbol ICES IGES Parameter Collector Current Gate Leakage Current Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V IC = 75A, VGE = 15V Min 4.0 - Typ 5.4 2.3 1.8 Max 1.0 10 8.1 2.6 2.1 Units mA µA V VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage Diode Symbol VFM Parameter Diode Forward Voltage Test Conditions Bridge Diodes, IE = 150A, VGE = 0V Regen Diodes, IE = 50A, VGE = 0V Min - Typ 1.8 - Max 2.1 2.4 Units V SCR Symbol IRRM IDRM VTM IH Parameter Max. Peak Reverse Leakage Current Max. Peak Off-state Leakage Current Forward On-state Voltage Holding Current Test Conditions VRRM = 600V VDRM = 600V IF = 100A IF = 50A DC Method, Bias Condition C Min - Typ 200 Max 15 15 1.35 1.15 300 Units mA V mA Dynamic Characteristics IGBT Symbol QG td(on) tr td(off) tf Parameter Total Gate Charge Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Test Conditions VCC = 300V, IC = 150A, VGE = 15V VCC = 300V, IC = 150A VGE1 = VGE2 = 15V RG = 20Ω , Turn-on RG = 10Ω , Turn-off Min - Typ - Max 1600 1200 850 2.1 300 Units nC ns ns µs ns Diode Symbol trr Qrr Parameter Diode Reverse Recovery Time Diode Reverse Recovery Charge Test Conditions IE = 150A, di/dt = 300A/µs Min Bridge Diodes only Min - Typ - Max 170 9.0 Units ns µC www.irf.com 3 G150SPBK06P3H Circuit Diagram - HiRelTM INT-A-Pak 3 A B C D C(+) Q8 SCR SC R A SC R A SC R G SC R C D6 G1 A R3 2 VR5 VR6 E1 A E1B Q1 D1 G1B R2 2 VR 3 VR 4 E1C Q7 D7 G1C R1 2 V R1 VR2 Q5 D5 RE G GR VR7 VR8 ER E2 A 2 R4 Q6 G2 A R5 2 VR9 VR1 0 E2B Q2 D2 Q3 G2B R6 2 VR 11 VR 12 E2C D3 G2C R7 2 V R13 VR14 Q4 D4 DC(-) Case Outline- HiRelTM INT-A-Pak 3 Notes: 1) All dimensions are in inches 2) Unless otherwise specified, Tolerances .XX = ±0.01, .XXX = ±0.005 4 www.irf.com G150SPBK06P3H Part numbering Nomenclature G 150 SP B IGBT Module Current Capability 150 = 150 Amps K 06 P3 H Screening Level H = Military Grade Screened per MIL-PRF-38534 Package Type Circuit Configuration SP = Seven Plus P3 = HiRelTM INT-A-Pak 3 2.84" X 5.0" X 1.0" 06 = 600V Voltage IGBT Speed / SC Capability K = Fast, SC Capable Generation IGBT / FWD Configuration B = GEN 4 / GEN 3 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 06/2009 www.irf.com 5