G450HHBK06P2

PD-97013A HiRelTM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE Product Summary Part Number G450HHBK06P2 VCE 600V IC 450A VCE(SAT) 1.8 G450HHBK06P2 HiRelTM INT-A-Pak 2 The HiRelTM I NT-A-Pak series are isolated near hermetic power modules which combine the latest IGBT and Soft Recovery Rectifier Technology. The module uses both high-speed and low Vce(sat) IGBT's packaged for ultra low thermal resistance junction to case. The G450HHBK06P2 power module consists of six IGBT's and six FRED's in a Phase- Leg or Half-Bridge configuration. Features: n Rugged, Lightweight near Hermetic Package with Integrated Power Terminal Cap Gen IV IGBT Technology Soft Recovery Rectifiers Ultra-Low Thermal Resistance Zener Gate Protection Very Low Conduction and Switching Loss -55°C to +125°C Operating Temperature Screening to meet the intent of MIL-PRF-38534 Class H n Short Circuit Capability n 2.0 Ohms Series Gate Resistor n High Altitude Operation, 85,000 Feet Above Sea Level at Rated Voltage n n n n n n n Absolute Maximum Ratings @ Tj=25°C (unless otherwise specified) Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage Continuous Collector Current @ Tc = 25°C Continuous Collector Current @ Tc = 70°C Isolation Voltage Symbol VCES VGE IC VISOL Value 600 ±20 600 450 2500 Units V A VRMS www.irf.com 1 11/08/05 G450HHBK06P2 Electrical Characteristics @ Tj = 25°C (unless otherwise specified) Parameter Off Characteristics Collector Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate Emitter Leakage Current Symbol VCES ICES IGES VGE = 0V Test Conditions Min. 600 - Typ. - Max. 2.0 10 Units V mA µA VGE =0V, VCE = 600V VGE = ±15V, VCE = 0V On Characteristics Gate Threshold Voltage Collector Emitter Saturation Voltage VGE(TH) VCE = VGE, IC = 45mA VCE(SAT) VGE = 15V, IC = 450A 4.0 1.8 7.5 2.6 V Dynamic Characteristics Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg CIES COES CRES VCE = 300V, IC = 450A, VGE = 15V VGE = 0V, VCE = 25V, f = 1.0MHz 2,600 48 3.0 0.3 nC nF Switching Inductive Load Characteristics Turn-On Delay Time Rise Time Turn-On Losses Turn-Off Delay Time Fall Time Turn-Off Losses td(on) tr Eon td(off) tf Eoff VCC = 300V, IC = 450A, VGE =15V RG(on) = 20Ω , RG(off) =10Ω, L=100µH 800 460 45 2800 400 60 900 700 3400 500 ns mJ ns mJ Diode Characteristics Forward Voltage Reverse Recovery Charge Peak Reverse Recovery Current Reverse Recovery Time VF Qrr Irr trr IF = 450A VR =300V, IC =450A, di/dt =-1100A/µs 1.2 9.5 105 160 1.8 12 170 V µC A ns 2 www.irf.com G450HHBK06P2 Electrical Characteristics @ Tj = 125°C (unless otherwise specified) Parameter Off Characteristics Collector Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate Emitter Leakage Current Symbol VCES ICES IGES Test Conditions VGE = 0V VGE =0V, VCE = 600V VGE = ±15V, VCE = 0V Min. 600 - Typ. - Max. 18 10 Units V mA µA On Characteristics Gate Threshold Voltage Collector Emitter Saturation Voltage VGE(TH) VCE = VGE, IC = 45mA VCE(SAT) VGE = 15V, IC = 450A 4.0 1.8 7.5 2.6 V Diode Characteristics Forward Voltage VF IF = 450A 1.2 1.8 V Thermal-Mechanical Specifications Parameter IGBT Thermal Resistance, Junction to Case, per Switch Diode Thermal Resistance, Junction to Case, per Switch Operating Junction Temperature Range Storage Temperature Range Screw Torque - Mounting Screw Torque - Terminals Module Weight Symbol RthJC TJ TSTG T Min -55 -55 - Max 0.07 0.12 150 125 26 270 Units °C/W °C in-lbs g Module Screening Test or Inspection Internal Visual Temperature Cycle Mechanical Shock Burn-in Final Electrical Test External Visual 2009 MIL-STD-883 Method Condition 2017 1010 2002 1015 B B A Comments 10 Cycles, -55°C to +125°C 1500G, 0.5ms, 5 Times (Y1 direction only) 160 Hrs @ +125°C Group A, -55°C, +25°C, +125°C www.irf.com 3 G450HHBK06P2 Schematic Maximum DC Collector Current (A) TC, Case Temperature (°C) Fig 1: Maximum Collector Current Vs Case Temperature 4 www.irf.com G450HHBK06P2 90% Vge +Vge Vce Ic 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = Vce Ic dt t1 ∫ t1+5µ S Vce ic dt t1 t2 Fig. 2 - Test Circuit for Measurement of Eon, Eoff, trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 3 - Test Waveforms for Circuit of Fig. 2, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = ∫ trr id dt Ic dt tx tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce dt Eon = Vce ieIc dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd idIc dt Vc dt t3 ∫ t1 t4 Fig. 3 - Test Waveforms for Circuit of Fig. 2, Defining Eon, td(on), tr Fig. 4 - Test Waveforms for Circuit of Fig. 2, Defining Erec, trr, Qrr, Irr www.irf.com 5 G450HHBK06P2 Case Outline and Dimensions - HiRelTM INT-A-Pak 2 Notes: 1) All dimensions are in inches 2) Unless otherwise specified, Tolerances .XX = ±0.01, .XXX = ±0.005 Part numbering Nomenclature G 450 HH B K IGBT Module - Hirel Current Capability 450 = 450 Amps 06 P2 H Screening Level P = Unscreened, 25°C Electrical Test ( Not intended for Qualification) H = Screened per MIL-PRF-38534 Package Type P2 = HiRel TM INT-A-Pak 2, 2.5" X 4.0" X 1.0" Circuit Configuration HH = Half Bridge Voltage 06 = 600V Generation IGBT / FWD Configuration B = GEN 4 / GEN 3 IGBT Speed / SC Capability K = Fast, SC Capable WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776 Data and specifications subject to change without notice. 11/05 6 www.irf.com