GA200SA60S

PD- 50070A /) 5)$5 INSULATED GATE BIPOLAR TRANSISTOR Features • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package ( 2,500 volt AC) • Very low internal inductance ( 5 nH typ.) • Industry standard outline C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits • Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages S O T -2 2 7 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. 600 200 100 400 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf •in(1.3N•m) Units V A V mJ V W °C Thermal Resistance Parameter RθJC RθCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module Typ. ––– 0.05 30 Max. 0.20 ––– ––– Units °C/W gm www.irf.com 1 4/24/2000 GA200SA60S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.62 — V/°C — 1.10 1.3 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.33 — V — 1.02 — VGE(th) Gate Threshold Voltage 3.0 — 6.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 — mV/°C gfe Forward Transconductance U 90 150 — S — — 1.0 mA ICES Zero Gate Voltage Collector Current — — 10 IGES Gate-to-Emitter Leakage Current — — ±250 nA V(BR)CES V(BR)ECS Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 1.0mA IC = 100A VGE = 15V IC = 200A See Fig.2, 5 IC = 100A , TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 2 mA VCE = 100V, IC = 100A VGE = 0V, VCE = 600V VGE = 0V, VCE = 10V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Max. Units Conditions 1200 IC = 100A 150 nC VCC = 400V See Fig. 8 380 VGE = 15V — — TJ = 25°C ns 1300 IC = 100A, VCC = 480V 580 VGE = 15V, RG = 2.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 13 25.5 — TJ = 150°C, — IC = 100A, VCC = 480V ns — VGE = 15V, RG = 2.0Ω — Energy losses include "tail" — mJ See Fig. 10,11, 13 — nH Between lead, and center of the die contact 16250 — VGE = 0V 1040 — pF VCC = 30V See Fig. 7 190 — ƒ = 1.0MHz Typ. 770 100 260 78 56 890 390 0.98 17.4 18.4 72 60 1500 660 35.7 5.0 Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 15 ) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0Ω, (See fig. 14) U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com GA200SA60S 250 F o r b o th : T ria n g u la r w a ve : 200 D uty c yc le: 50% TJ = 125 ° C Ts ink = 90 ° C G ate drive as spec ified P o w e r D is s ip a tio n = 1 4 0 W C la m p vo l ta g e : 8 0 % o f ra te d Load Current ( A ) 150 S q u a re wave : 6 0 % o f ra te d v o lta g e 100 50 Id e al d io de s 0 0.1 1 10 A 100 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 °C  TJ = 150 ° C  100 TJ = 25 ° C  TJ = 25 °C  10 100 1 0.5 V = 15V  20µs PULSE WIDTH GE 1.0 1.5 2.0 2.5 10 5 6 V = 50V  5µs PULSE WIDTH CC 7 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA200SA60S 200 3.0 Maximum DC Collector Current(A) 150 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE 100 2.0  IC = 400 A 50  IC = 200 A  IC = 100 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA200SA60S 30000 VGE , Gate-to-Emitter Voltage (V) 24000  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V 100A I C = 110A 16 C, Capacitance (pF) Cies  18000 12 12000 C oes C res 8 6000 4 0 1 10 100 0 0 200 400 600 800 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 25 Total Switching Losses (mJ) 23 Total Switching Losses (mJ) VCC = 480V VGE = 15V 24 TJ = 25 ° C I C = 200A  1000  RG ==2.0Ω Ohm G VGE = 15V VCC = 480V 22  IC = 350A 400 A 100  IC = 200 A  IC = 100 A 21 20 19 18 0 10 20 30 40 50 (Ω RG , Gate Resistance (Ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA200SA60S 160 Total Switching Losses (mJ) 120 80 I C , Collector Current (A)  RG ==2.0Ω RG Ohm Ω T J = 150 ° C VCC = 480V VGE = 15V 1000  VGE = 20V T J = 125 oC 100 10 40 SAFE OPERATING AREA 0 100 1 150 200 250 300 350 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 6 www.irf.com GA200SA60S L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 GA200SA60S SOT-227 Package Details Dimensions are shown in millimeters ( inches ) 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) 4 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) -A 3 C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E C 4 1 S E C D 3 2 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) -B 4 1 G E IG B T A1 K2 3 2 K1 A2 H E XF R E D S E G G HIGBT T EXFE 1 7 .50 ( .29 5 ) 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 2 R FULL 1 5.00 ( .5 90 ) 8.10 ( .3 19 ) 7.70 ( .3 03 ) 0 .25 ( .01 0 ) M C A M B M 2 .10 ( .08 2 ) 1 .90 ( .07 5 ) -C 0.1 2 ( .00 5 ) 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) Tube QUANTITIES PER TUBE IS 10 M4 SREW AND WASHER INCLUDED IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com