GA200SA60U

PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package ( 2,500 Volt AC/RMS) • Very low internal inductance ( ≤ 5 nH typ.) • Industry standard outline C Ultra-FastTM Speed IGBT VCES = 600V G E VCE(on) typ. = 1.60V @VGE = 15V, IC = 100A n-channel Benefits • Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating • Lower overall losses available at frequencies ≥ 20kHz • Easy to assemble and parallel • Direct mounting to heatsink • Lower EMI, requires less snubbing • Plug-in compatible with other SOT-227 packages S O T -2 2 7 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load CurrentR Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. 600 200 100 400 400 ± 20 160 2500 500 200 -55 to + 150 -55 to + 150 12 lbf •in(1.3N•m) Units V A V mJ V W °C Thermal Resistance Parameter RθJC RθCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module Typ. ––– 0.05 30 Max. 0.25 ––– ––– Units °C/W gm www.irf.com 1 4/24/2000 GA200SA60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS DV(BR)CES/DTJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff. of Breakdown Voltage — 0.38 — V/°C — 1.60 1.9 Collector-to-Emitter Saturation Voltage — 1.92 — V — 1.54 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -11 — mV/°C Forward Transconductance U 79 — S — — 1.0 mA Zero Gate Voltage Collector Current — — 10 Gate-to-Emitter Leakage Current — — ±250 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 10 mA IC = 100A VGE = 15V IC = 200A See Fig.2, 5 IC = 100A , TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 2.0 mA VCE = 100V, IC = 100A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 770 100 260 54 79 130 300 0.98 3.48 4.46 56 75 160 460 7.24 5.0 16500 1000 200 Max. Units Conditions 1200 IC = 100A 150 nC VCC = 400V See Fig. 8 380 VGE = 15V — — TJ = 25°C ns 200 IC = 100A, VCC = 480V 450 VGE = 15V, RG = 2.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 7.6 — TJ = 150°C, — IC = 100A, VCC = 480V ns — VGE = 15V, RG = 2.0Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com GA200SA60U 200 For both: Triangular wave: 160 Load Current ( A ) Duty cycle: 50% T J = 125°C T sink= 90°C Gate drive as specified Power Dissipation = 140W Clamp voltage: 80% of rated 120 Square wave: 60% of rated voltage 80 40 Ideal diodes 0 0.1 1 10 A 100 f, Fre quen c y ( kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 °C  TJ = 25 °C  100 100 TJ = 150 °C  TJ = 25 °C  V = 15V  20µs PULSE WIDTH GE 1.0 1.5 2.0 2.5 3.0 3.5 10 0.5 10 5.0 V = 25V  20µs PULSE WIDTH CE 5µs PULSE WIDTH 7.0 6.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA200SA60U 200 3.0 150 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  IC = 400 A Maximum DC Collector Current(A) 100 2.0  IC = 200 A  IC = 100 A 50 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ° TC , Case Temperature ( C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA200SA60U 30000 25000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 20000 Cies   VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 110A 16 12 15000 C oes 10000 8 5000 C res 4 0 1 10 100 0 0 200 400 600 800 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 60 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 °C 50 I C = 200A 40  100  RG = Ohm 2.0 Ω VGE = 15V VCC = 480V IC = 350 A  IC = 400 A  IC = 200 A 10 30  IC = 100 A 20 10 0 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG G Gate Resistance (Ohm) R , , Gate Resistance (Ω) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA200SA60U 60 Total Switching Losses (mJ) 40 30 20 10 0 0 100 200 300 SAFE OPERATING AREA 10 400 1 10 100 1000 I C , Collector Current (A) RG TJ VCC 50 VGE  = 2.0 Ω Ohm = 150 ° C = 480V = 15V 1000  VGE = 20V T J = 125 oC 100 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 6 www.irf.com GA200SA60U L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 GA200SA60U SOT-227 Package Details Dimensions are shown in millimeters ( inches ) 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) 4 38 .3 0 ( 1 .5 0 8 ) 37 .8 0 ( 1 .4 8 8 ) -A 3 C H AM FE R 2 .00 ( .0 79 ) X 4 5 7 LE A D A S S IG M E N T S E C 4 1 S E D C 3 2 S G EG HIGBT T EXFE 3 2 K1 A2 HEXFRE D 6 .25 ( .2 46 ) 1 2.50 ( .4 92 ) 2 5.7 0 ( 1.01 2 ) 2 5.2 0 ( .9 92 ) -B 4 1 G E IG B T A1 K2 1 7 .50 ( .2 95 ) 3 0.2 0 ( 1.1 8 9 ) 2 9.8 0 ( 1.1 7 3 ) 4X 2 .1 0 ( .0 82 ) 1 .9 0 ( .0 75 ) 2 R FU L L 15 .0 0 ( .59 0 ) 8 .1 0 ( .31 9 ) 7 .7 0 ( .30 3 ) 0.2 5 ( .0 10 ) M 2.1 0 ( .0 8 2 ) 1.9 0 ( .0 7 5 ) -C 0 .12 ( .0 05 ) CAMBM 12 .3 0 ( .4 84 ) 11 .8 0 ( .4 64 ) Tube QUANTITIES PER TUBE IS 10 M4 SREW AND WASHER INCLUDED IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com