GA400TD25S

PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Standard Speed IGBT VCES = 250V VCE(on) typ. = 1.3V @VGE = 15V, IC = 400A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Q Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 250 400 800 800 800 ±20 2500 1350 700 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. — — 0.1 — — 400 Max. 0.09 0.20 — 6.0 5.0 — Units °C/W N. m g www.irf.com 1 05/15/02 GA400TD25S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 250 — — VGE = 0V, IC = 1mA Collector-to-Emitter Voltage — 1.3 1.6 VGE = 15V, IC = 400A — 1.3 — V VGE = 15V, IC = 400A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 3.0mA VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.5mA gfe Forward TransconductanceT — 371 — S VCE = 25V, IC = 400A ICES Collector-to-Emitter Leaking Current — — 0.50 mA VGE = 0V, VCE = 250V — — 20 VGE = 0V, VCE = 250V, T J = 125°C VFM Diode Forward Voltage - Maximum — 1.7 2.2 V IF = 500A, V GE = 0V — 1.7 — IF = 500A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres trr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 1600 232 528 1250 365 841 792 6.0 38 45 36000 4080 800 229 71 8154 911 Max. Units Conditions 2400 VCC = 200V 348 nC IC = 440A 792 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 400A — VCC = 150V — VGE = ±15V — mJ See Fig.17 through Fig.21 — 52 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 400A — A RG1 = 15Ω — nC RG2 = 0Ω — A/µs VCC = 150V di/dt»1400A/µs 2 www.irf.com GA400TD25S 300 Load Current ( A ) 200 S q u a re w a v e : D u ty c y c le : 5 0 % T J = 12 5°C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 1 8 4 W 6 0 % o f ra te d v o lta g e 100 Id eal diod es 0 0.1 1 10 A 100 f , F re q uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) T = 150 o C  J 125°C I C , Collector-to-Emitter Current (A) 125°C TJ = 150 o C  TJ = 25 o C  100 TJ = 25 oC  100 1.0 V = 15V  20µs PULSE WIDTH GE 80µs 1.5 2.0 10 5 6 V = 50V  5µs PULSE WIDTH CC CE 80µs 25V 7 8 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA400TD25S 500 2.0 Maximum DC Collector Current ( A ) 400 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  IC = 800 A 300 1.5 200  IC = 400 A  IC = 200 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 100 0 25 50 75 100 125 A 150 TC , Case Tem p erature ( °C ) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 0.1 T h e rm a l R e s p o n s e (Z th JC ) D = 0.5 0 0.20 0.10 0.01 0.05 0.0 2 0.0 1 S IN G LE P U LS E (T H E R M A L R E S P O N S E ) P DM t 1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.0001 A 1000 0.001 0.01 0.1 1 10 100 t 1 , R e cta n g ula r P u lse D u ratio n ( se c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA400TD25S 60000 50000 VGE , Gate-to-Emitter Voltage (V)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC 400V VCC = 200V I C = 440A 16 C, Capacitance (pF) 40000 Cies  12 30000 8 20000 C oes 10000 4 C res 1 10 100 0 0 0 400 800 1200 1600 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 60 Total Switching Losses (mJ) 50 Total Switching Losses (mJ) V CC = 150V V GE = 15V 125°C TJ = 25 ° C 55 I C = 400A  1000  RG1=15OhmG2 = 0 Ω G = Ω;R VGE = 15V VCC = 150V 45 100  IC = 800 A  IC = 400 A  IC = 200 A 40 35 30 0 10 20 30 40 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG ,, Gate Resistance ( (Ohm) RG Gate Resistance Ω ) TJ , Junction Temperature (° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA400TD25S 100 IC , Collector-to-Emitter Current ( A ) Total Switching Losses (mJ) RG1 =15Ω;RG2 = 0 Ω G = Ohm T J =125°C 150 ° C VCC = 150V 80 VGE = 15V  1000 V G E E 2 0V G= T J = 125°C V C E m easured at term inal ( Peak V olta g e ) 800 60 600 S AFE OPERATING AREA 40 400 20 200 0 0 200 400 600 800 1000 0 0 100 200 A 300 I C , Collector-to-emitter Current (A) VCE , C ollector-to-Emitter Voltag e ( V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 12000 I F = 800A Instantaneous Forward Current - IF ( A ) I F = 400A 10000 I F = 200A TJ = 12 5°C 8000 QRR - ( nC) TJ = 25 °C 100 6000 4000 2000 10 0.0 0.5 1.0 1.5 2.0 2.5 A VR = 15 0V T J = 1 25 °C T J = 2 5°C 0 400 500 600 700 800 900 A F o rw a rd V o lta g e D ro p - V F M ( V ) di f /dt - ( A/ µ s ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA400TD25S 300 100 I F = 800A I F = 400A I F = 200A 80 I F = 800A I F = 400A I F = 200A 200 trr - ( ns ) IRRM - ( A ) 100 60 40 20 0 400 VR = 15 0V T J = 1 25 °C T J = 2 5°C 500 600 700 800 900 A V R = 15 0V T J = 12 5 °C T J = 25 °C 0 400 500 600 700 800 900 A di f /dt - ( A/ µ s ) di f /dt - ( A/ µ s ) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA400TD25S 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ Vce Ic dt t1 + 5 µ S V c e ic d t t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA400TD25S V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit RL= 0 - 480V 150V 4 X IC @25°C Figure 22. Pulsed Collector Current TestCircuit www.irf.com 9 GA400TD25S Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T Pulse width 80µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 106.30 3X M6 8 [.314] MAX. 4.185 [4.224] 93.30 3.673 92.70 [3.650] 28.60 2X 27.40 1.079 [1.126] 4X 6.60 5.40 11 10 48.30 47.70 1.878 [1.902] 8 9 1 2 3 6 7 5 4 2X 15.59 14.39 .567 [.614] 4X FAS T ON T AB (110) 2.8 x 0.5 [.110 x .020] 48.50 47.50 1.870 [1.909] 8.00 6.60 .260 [.315] 31.00 29.60 5.50 4.50 1.165 [1.220] .213 [.260] NOT ES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 2. CONT ROLLING DIMENS ION: MILLIMET ER. 6.80 4X Ø 6.20 [] .267 .244 [] .217 .177 0.15 [.0059] CONVEX 104.50 103.50 4.075 [4.114] 24.00 23.00 .906 [.945] 2.303 [2.343] 62.70 2.468 61.70 [2.429] 59.50 58.50 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com