GA400TD60U

PD - 50059D GA400TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.70V @VGE = 15V, IC = 400A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 400 800 800 800 ±20 2500 1250 650 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module Typ. — — 0.1 — — 400 Max. 0.10 0.20 — 6.0 5.0 — Units °C/W N. m g www.irf.com 1 05/15/02 GA400TD60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 — — VGE = 0V, IC = 1mA — 1.7 2.4 VGE = 15V, IC = 400A — 1.8 — V VGE = 15V, IC = 400A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 2.5mA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.5mA Forward Transconductance T — 481 — S VCE = 25V, I C = 400A Collector-to-Emitter Leaking Current — — 2.0 mA VGE = 0V, VCE = 600V — — 20 VGE = 0V, VCE = 600V, TJ = 125°C Diode Forward Voltage - Maximum — 3.7 — V IF = 400A, VGE = 0V — 3.6 — IF = 400A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 500 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 1806 251 612 1033 335 688 225 26 48 74 40136 2509 522 232 141 16292 1641 Max. Units Conditions 2709 VCC = 400V 376 nC IC = 270A ,VGE = 15V 918 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 400A — VCC = 360V — VGE = ±15V — mJ — 89 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 400A — A RG1 = 15Ω — nC RG2 = 0Ω — A/µs VCC = 360V di/dt=1300A/µs 2 www.irf.com GA400TD60U 250 For both: 200 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125°C T s ink = 90°C G ate drive as specified P ow e r Dis sip ation = 175 W 150 S q u a re w a v e : 60 % of ra ted vo ltag e 100 I 50 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) TJ = 125 °C  I C , Collector-to-Emitter Current (A) TJ = 25 °C  T = 125 °C  J 100 100 TJ = 25 °C  10 10 1.0 V = 15V  80µs PULSE WIDTH GE 1.5 2.0 2.5 3.0 1 5.0 V = 25V  80µs PULSE WIDTH CE 6.0 7.0 8.0 9.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA400TD60U 500 3.0 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A)  IC = 800 A 400 300 2.0 200  IC = 400 A 100  IC = 200 A 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T herm al R es pons e (Zth JC ) 0.1 D = 0 .50 0.20 0 .10 0.01 0 .05 0 .02 0.01 S IN G L E P UL SE ( T H ER M A L R ES PO N S E ) P DM t 1 t2 Notes: 1. Duty factor D = t 1 / t2 0.001 0.0001 2. Peak TJ = PDM x Z thJC + TC A 1000 0.001 0.01 0.1 1 10 100 t 1 , R ecta n g ula r Pulse D u ration ( sec ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA400TD60U 80000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 60000  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 270A 16 Cies  40000 12 C oes 20000 8 C res 4 0 1 10 100 0 0 400 800 1200 1600 2000 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 120 Total Switching Losses (mJ) 100 Total Switching Losses (mJ)  V CC = 360V V GE = 15V TJ = 125 °C I C = 400A 1000  RG1=15OhmG2 = 0 Ω G = Ω;R VGE = 15V VCC = 360V  IC = 800 A 100 80  IC = 400 A  IC = 200 A 60 40 0 10 20 30 40 50 (Ω RG , Gate Resistance (Ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA400TD60U 200 IC , Collector-to-Emitter Current ( A ) Total Switching Losses (mJ) RG =15Ω;RG2 = 0 G1 = Ohm T J = 125 ° C VCC = 360V 160 VGE = 15V  Ω 1000 V G E = 2 0V T J = 125°C VCE measured at terminal (Peak Voltage) 800 120 600 S AFE O PERATING AREA 400 80 40 200 0 0 200 400 600 800 0 0 200 400 600 A 800 I C , Collector-to-emitter Current (A) VCE , Collector-to-E mitter Volta g e ( V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 30000 Instantaneous Forward Current - IF ( A ) I F = 80 0A I F = 4 00 A I F = 200 A 20000 100 TJ = 125°C TJ = 25°C QRR - ( nC) 10000 VR = 3 6 0 V TJ = 1 2 5 ° C T J = 2 5 °C 10 0.0 2.0 4.0 6.0 0 500 1000 1500 2000 F o rw ard V o lta g e D ro p - V FM (V ) dif/dt - (A/µs) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA400TD60U 400 250 I F = 8 00 A I F = 4 00 A 300 200 I F = 2 00 A I F = 80 0A I F = 4 00 A I F = 2 00 A trr - ( ns ) 200 IRRM - ( A ) 150 100 100 50 VR = 3 6 0 V T J = 1 2 5 °C T J = 2 5 °C 0 500 1000 1500 2000 0 500 1000 VR = 3 6 0V TJ = 1 25 °C TJ = 2 5°C 1500 2000 dif/dt - (A/µs) dif/dt - (A/µs) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA400TD60U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ Vce Ic dt t1 + 5 µ S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA400TD60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA400TD60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T Pulse width 50µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 106.30 3X M6 8 [.314] MAX. 4.185 [4.224] 93.30 3.673 92.70 [3.650] 28.60 2X 27.40 1.079 [1.126] 4X 6.60 5.40 11 10 48.30 47.70 6 7 1 2 3 5 4 2X 15.59 14.39 .567 [.614] 4X FAST ON T AB (110) 2.8 x 0.5 [.110 x .020] 6.80 4X Ø 6.20 .244 [.267] 48.50 47.50 1.870 [1.909] 8.00 6.60 .260 [.315] 31.00 29.60 5.50 4.50 1.165 [1.220] .213 [.260] NOT ES : 1. ALL DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2. CONT ROLLING DIMENSION: MILLIMET ER. [] 1.902 1.878 8 9 [] .217 .177 0.15 [.0059] CONVEX 104.50 103.50 4.075 [4.114] 24.00 23.00 .906 [.945] 2.303 [2.343] 62.70 2.468 61.70 [2.429] 59.50 58.50 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com