GA500TD60U

PD - 50048D GA500TD60U "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.9V @VGE = 15V, IC = 500A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 500 1000 1000 500 ±20 2500 1550 800 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3 S Weight of Module Typ. — — 0.1 — — 400 Max. 0.08 0.20 — 6.0 5.0 — Units °C/W N. m g www.irf.com 1 05/15/02 GA500TD60U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 600 — — VGE = 0V, IC = 1mA — 1.9 2.4 VGE = 15V, IC = 500A — 2.0 — V VGE = 15V, IC = 500A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 3.0mA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 3.0mA Forward Transconductance T — 244 — S VCE = 25V, I C = 500A Collector-to-Emitter Leaking Current — — 2.0 mA VGE = 0V, VCE = 600V — — 20 VGE = 0V, VCE = 600V, TJ = 125°C Diode Forward Voltage - Maximum — 4.0 — V IF = 500A, VGE = 0V — 4.1 — IF = 500A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 2100 292 1050 1900 430 800 190 41 56 97 46800 2920 600 246 144 17655 1386 Max. Units Conditions 3200 VCC = 400V 440 nC IC = 500A 1580 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 500A — VCC = 360V — VGE = ±15V — mJ See Fig.17 through Fig.21 — 110 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 500A — A RG1 = 15Ω — µC RG2 = 0Ω — A/µs VCC = 360V di/dt=1300A/µs 2 www.irf.com GA500TD60U 250 F o r b o thwave: Square : 200 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G CE =d60% a s s p e c ifie d V a te riv e Rated P o w e r D is s ip a tio n = 270 W 150 100 50 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 25 TJ = 150 o C  TJ = 25 o C  I C , Collector-to-Emitter Current (A) TJ = 150 oC 25  100 100 TJ = 25 oC  10 1.0 V = 15V  20µs PULSE WIDTH GE 80µs 1.5 2.0 2.5 3.0 10 5 6 7 8 V = 50V  5µs PULSE WIDTH CC CE 80µs 25V 9 10 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA500TD60U 600 2.5 500 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A) 400 2.0 IC = 500A  IC = 500 A 300  IC = 250 A 1.5 200 100  IC = 125 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 0.1 T he rm a l R es pon se (Zth JC ) D = 0 .5 0 0.20 0.01 0.10 P DM t 0.05 S IN G LE P U LS E ( TH E RM AL R E SP O NS E ) 0.01 0.1 1 Notes: 1. Duty factor D = t 1 t2 0.01 0.0 2 0.001 0.0001 0.001 1 / t2 2. Peak TJ = PDM x Z thJC + TC A 1000 10 100 t 1 , R ecta n g u la r Pulse D u ration ( se c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA500TD60U 100000 80000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) Cies  60000  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 500A 16 12 40000 C oes C res 8 20000 4 0 1 10 100 0 0 400 800 1200 1600 2000 2400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 200 Total Switching Losses (mJ) 160 Total Switching Losses (mJ) V CC = 360V V GE = 15V TJ = 125 ° C 180 I C = 500A 250A  1000  RG1=15OhmG2 = 0 Ω G = Ω;R VGE = 15V VCC = 360V 140 100  IIC = 500A C = 500 A  IC = 250 A  IC = 125 A 120 100 80 0 10 20 30 40 50 (Ω RG , Gate Resistance (Ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA500TD60U 250 IC , Collector-to-Emitter Current ( A ) Total Switching Losses (mJ) RG =15Ω;RG2 = 0 G1 = Ohm T J = 125 ° C VCC = 360V 200 VGE = 15V  Ω 1400 1200 V G E = 2 0V T J = 125°C V C E m easured at term inal ( Peak V olta g e ) 1000 150 800 S AFE OPERATING AREA 100 600 400 50 200 0 0 200 400 600 800 1000 0 0 100 200 300 400 500 600 A 700 I C , Collector-to-emitter Current (A) VCE , C ollector-to-Emitter Voltag e ( V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Reverse Bias SOA 30000 IF = 1000 A Instantaneous Forward Current - IF ( A ) IF = 5 0 0 A IF = 250A 20000 100 TJ = 1 25°C TJ = 25°C QRR - ( nC) 10000 VR = 3 6 0 V T J = 1 2 5 °C T J = 2 5 °C 10 0.0 2.0 4.0 6.0 0 500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V FM (V ) dif/dt - (A/µs) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA500TD60U 400 250 I F = 1 00 0A I F = 5 00 A 300 200 I F = 25 0A I F = 10 00 A I F = 50 0A I F = 2 50 A trr - ( ns ) 200 IRRM - ( A ) 150 100 100 50 VR = 3 6 0 V T J = 1 2 5 °C TJ = 2 5 ° C 0 500 1000 1500 2000 0 500 1000 VR = 3 6 0 V T J = 1 2 5 °C T J = 2 5 °C 1500 2000 dif/dt - (A/µs) dif/dt - (A/µs) Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA500TD60U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ Vce Ic dt t1 + 5 µ S V c e ic d t t1 Fig. 17 - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 19 - Test Waveforms for Circuit of Fig. 17, Defining Eon, td(on), tr Fig. 20 - Test Waveforms for Circuit of Fig. 17, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA500TD60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 21. Macro Waveforms for Figure 17's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 22. Clamped Inductive Load Test Circuit Figure 23. Pulsed Collector Current Test Circuit www.irf.com 9 GA500TD60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T Pulse width 80µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 4.224 106.30 4.185 3X M6 8 [.314] MAX. [] 93.30 3.673 92.70 [3.650] 28.60 2X 27.40 1.079 [1.126] 4X 6.60 5.40 .213 [.260] NOTES : 1. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 2. CONTROLLING DIMENS ION: MILLIMETER. 11 10 48.30 47.70 1.878 [1.902] 8 9 1 2 3 6 7 5 4 2X 15.59 14.39 .567 [.614] 4X FAS TON TAB (110) 2.8 x 0.5 [.110 x .020] 6.80 4X Ø 6.20 .244 [.267] 48.50 47.50 1.870 [1.909] 8.00 6.60 .260 [.315] 31.00 29.60 1.165 [1.220] 5.50 4.50 .177 [.217] 24.00 23.00 .906 [.945] 2.303 [2.343] 62.70 2.468 61.70 [2.429] 59.50 58.50 0.15 [.0059] CONVEX 104.50 103.50 4.075 [4.114] Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com