GA75TS120U

PD - 50062A GA75TS120U "HALF-BRIDGE" IGBT INT-A-PAK Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved Ultra-FastTM Speed IGBT VCES = 1200V VCE(on) typ. = 2.1V @VGE = 15V, IC = 75A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current ➀ Peak Switching Current ➁ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 75 150 150 150 ±20 2500 390 200 -40 to +150 -40 to +125 Units V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂ Weight of Module Typ. — — 0.1 — — 200 Max. 0.32 0.35 — 4.0 3.0 — Units °C/W N. m g www.irf.com 1 4/24/2000 GA75TS120U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units Conditions 1200 — — VGE = 0V, I C = 1mA — 2.1 3.1 VGE = 15V, IC = 75A — 1.9 — V VGE = 15V, IC = 75A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = 6.0V, IC = 750µA -11 — mV/°C VCE = 6.0V, IC = 750µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — gfe Forward Transconductance ➃ — 107 — S VCE = 25V, IC = 75A ICES Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 1200V — — 10 VGE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 2.3 3.3 V IF = 75A, V GE = 0V — 2.1 — IF = 75A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V V(BR)CES VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Q gc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 570 96 189 109 119 392 402 11 20 31 12815 570 110 174 107 9367 1491 Max. Units Conditions 854 VCC = 400V 144 nC IC = 85A 283 TJ = 25°C — RG1 = 15Ω, RG2 = 0 Ω, — ns IC = 75A — VCC = 720V — VGE = ±15V — mJ Inductor load — 45 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 75A — A RG1 = 15Ω — nC RG2 = 0 Ω — A/µs VCC = 720V di/dt = 1300A/µs 2 www.irf.com GA75TS120U 80 F o r b o th : 70 60 50 40 30 20 Id e a l d io d e s 10 0 0.1 1 10 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 83 W S q u a re w a v e : 60 % of ra ted vo ltag e I 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C, Collector-to-Emitter Current (A) I C , Collector Current (A) 100 T = 125 °C  J 100 TJ = 125 ° C  TJ = 25 °C  V = 15V  80µs PULSE WIDTH GE 1.5 2.0 2.5 10 T = 25 °C  J 1 10 1.0 0.1 4.0 V = 25V  80µs PULSE WIDTH CE 5.0 6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA75TS120U 80 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) V = 15V  80 us PULSE WIDTH GE 60  IC =150 A 40 2.0  IC = 75 A  IC= 37A = 37.5 A 20 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T he rm al R esp on se (Zth JC ) D = 0 .50 0.1 0.2 0 0 .1 0 0.05 0 .02 0 .01 P DM S ING LE PU LS E (TH ER M AL RE SP O N S E) Notes: 1. Duty factor D = t 1 / t 2 t 1 t2 0.01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 1000 0.001 0.01 0.1 1 10 100 t 1 , R e ctan g ula r Pulse D uratio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA75TS120U 25000 20000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF)  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  85 A VCC = 400V I C = 75A 15 15000 10 10000 5 5000 0 1 10 100 0 0 200 400 600 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 45 40 Total Switching Losses (mJ) Total Switching Losses (mJ)  V CC = 720V V GE = 15V TJ = =25°C°C C 1 25 I C = 75A 100  RG = 15Ohm RG1=15 Ω;RG2 = 0 Ω VGE = 15V VCC = 720V IC = 150 A  IC = 75 A  IC =37.5 A = 37A  35 10 30 25 10 20 30 40 50 RG , Gate Resistance (Ohm) ( Ω) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA75TS120U 70 Total Switching Losses (mJ) 50 40 30 20 10 I C , Collector Current (A) RG1 = 15Ohm RG =15 Ω;R G2 = 0 Ω T J = = 25°C C TC 1 150 ° 60 VCC = 720V VGE = 15V  200  VGE = 20V T J = 125 o C VCE measured at terminal(Peak Voltage) 150 100 50 0 0 20 40 60 80 100 120 140 SAFE OPERATING AREA 0 160 0 200 400 600 800 1000 1200 1400 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 16000 I F = 1 50 A In sta n ta n e ou s F o rw a rd C u rre n t - I F (A ) I F = 7 5A I F = 37 A 12000 100 Q R R - (nC ) TJ = 1 2 5 ° C TJ = 2 5 ° C 8000 4000 VR = 72 0 V T J = 12 5 ° C T J = 25 ° C 10 1.0 1.4 1.8 2.2 2.6 3.0 0 500 1000 F o rw a rd V o lta g e D ro p - V FM ( V ) d i f /dt - ( A / µ s ) 1500 2000 Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA75TS120U 250 200 VR = 7 2 0V T J = 1 25 ° C TJ = 2 5 ° C 160 I F = 1 50 A 200 I F = 15 0A I F = 7 5A I F = 3 7A I F = 7 5A I F = 3 7A - (A) IRRM 150 trr - (n s) 120 80 40 VR = 72 0 V T J = 12 5 ° C T J = 25 ° C 100 500 1000 d i f /dt - ( A / µ s ) 1500 2000 0 500 1000 di f /d t - ( A/ µ s ) 1500 2000 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA75TS120U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = ∫ Vce Ic dt t1 + 5 µ S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = t1 ∫ t4 V d idIc t dt Vd d t3 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA75TS120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 600V 600V 4 X IC @25°C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA75TS120U Notes: ➀ ➁ ➂ ➃ Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com