GB75YF120N

Bulletin I27209 01/06 GB75YF120N IGBT FOUR PAK MODULE Features • Square RBSOA • HEXFRED low Qrr, low Switching Energy • Positive VCE(on) Temperature Coefficient • Copper Baseplate • Low Stray Inductance Design VCES = 1200V IC = 75A @ TC = 67°C VCE(on) typ. = 3.4V ECONO2 4PAK Benefits • Benchmark Efficiency for SMPS appreciation in particular HF welding • Rugged Transient Performance • Low EMI, Requires Less Snubbing • Direct Mounting to Heatsink space saving • PCB Solderable Terminals • Low Junction to Case Thermal Resistance Absolute Maximum Ratings Parameter VCES IC @ Tc=25°C IC @ Tc=80°C ICM ILM IF @ Tc=25°C IF @ Tc=80°C IFM VGE PD @ Tc=25°C PD @ Tc=80°C TJ TSTG VISOL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref. Fig. C.T.5) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (IGBT) Maximum Power Dissipation (IGBT) Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage Max. 1200 100 67 200 200 40 25 150 ±20 480 270 150 -40 to +125 AC 2500 (MIN) Units V A V W °C V Thermal and Mechanical Characteristics Parameter RθJC (IGBT) RθJC (Diode) RθCS (Module) Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight Min 2.7 - Typical 0.05 170 Maximum 0.26 1.00 3.3 - Units °C/W N*m g 1 GB75YF120N Bulletin I27209 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) BV(CES) V CE(ON) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500µA VGE(th) ∆V GE (th)/ ∆T J ICES V FM Gate Threshold Voltage Thresold Voltage temp. coefficient Zero Gate Voltage Collector Current Diode Forward Voltage Drop 4.0 IGES Gate-to-Emitter Leakage Current 3.4 3.8 4.0 4.53 5.0 -11 7 580 3.9 4.43 4.37 5.02 4.0 4.5 4.5 5.1 6.0 250 2000 5.0 5.8 5.4 6.4 ± 200 nA V µA V IC = 75A VGE = 15V IC = 100A VGE = 15V IC = 75A VGE = 15V TJ = 125°C IC = 100A VGE = 15V TJ = 125°C VCE = VGE IC = 250µA mV/°C VCE = VGE IC = 1mA (25°C-125°C) VGE = 0 VCE = 1200V VGE = 0 VCE = 1200V Tj = 125°C IF = 75A IF = 100A IF = 75A Tj = 125°C IF = 100A Tj = 125°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter QG QGE QGC EON EOFF ETOT EON EOFF ETOT td(on) tr td(off) tf RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min. Typ. Max. Units Conditions 630 65 250 1505 2411 3916 2248 3351 7599 169 71 393 136 Tj = 150°C IC = 150A RG =10Ω VGE = 15V to 0 10 µs Tj = 150°C VCC = 900V VP = 1200V RG = 10Ω Irr t rr Qrr Diode Peak Rev. Recovery Current Diode Rev. Recovery Time Total Rev. Recovery Charge Energy losses include "tail" and diode reverse recovery. IC = 50A nC µJ VCC = 600A VGE = 15V IC = 50A VCC = 600V VGE = 15V RG = 4.7Ω L = 500µH Tj = 25°C µJ IC = 50A VCC = 600V VGE = 15V RG = 4.7Ω L = 500µH Tj = 125°C ns IC = 50A VCC = 600V VGE = 15V RG = 4.7Ω L =500µH Tj = 125°C FULL SQUARE VGE = 15V to 0 1.45 2.35 2.5 4.0 A µs µs µC µC Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VCC = 600V IF = 75A dI/ dt = 10A/µs 0.401 0.5 0.655 0.8 0.181 0.4 0.54 1.5 2 GB75YF120N Bulletin I27209 01/06 160 140 500 400 120 100 80 60 40 20 0 0 20 40 60 80 100 120 PD (W) IC (A) 300 200 100 0 0 20 40 60 80 100 120 140 160 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 100 1 PD (W) 10 10 IC (A) 0.1 0.01 1 10 100 1000 10000 1 10 100 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C TC (°C) Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 3 GB75YF120N Bulletin I27209 01/06 160 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 160 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 9V ICE (A) 80 60 40 20 0 0 1 2 3 4 5 6 ICE (A) 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 500µs VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 500µs 160 140 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 25°C 125°C 20 18 16 14 ICE = 75A ICE = 50A ICE = 25A VCE (V) IF (A) 12 10 8 6 4 2 0 7 9 11 13 15 17 19 VF (V) VGE (V) Fig. 8 - Typical VCE vs. VGE TJ = 25°C Fig. 7 - Typ. Diode Forward Characteristics tp = 500µs 4 GB75YF120N Bulletin I27209 01/06 20 18 16 14 ICE = 75A ICE = 50A ICE = 25A 300 250 200 TJ = 25°C TJ = 125°C VCE (V) 10 8 6 4 2 0 7 9 11 13 15 17 19 ICE (A) 12 150 100 50 0 5 6 7 8 9 10 11 12 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = 125°C VGE (V) Fig. 10 - Typ. Transfer Characteristics VCE = 20V; tp = 500µs 1 5.5 5 TJ = 125°C 4.5 TJ = 25°C 0.1 ICES (mA) Vgeth (V) 4 3.5 3 TJ = 125°C 0.01 TJ = 25°C 0.001 400 600 800 1000 1200 2.5 2 0 0.2 0.4 0.6 0.8 1 VCES (V) Fig. 11 - Typ Zero Gate Voltage Collector Current IC (mA) Fig. 12 - Typ Threshold Voltage 5 GB75YF120N Bulletin I27209 01/06 9 8 7 6 1 tdOFF 5 4 3 2 1 0 20 40 60 EOFF Switching Time (µs) tdON Energy (mJ) 0.1 tF tR EON 0.01 80 100 120 140 160 20 40 60 80 100 120 140 160 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 5Ω; VGE= 15V IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 5Ω; VGE= 15V 12 800 700 600 10 8 125°C tRR (ns) IRR (A) 500 400 300 125°C 6 4 25°C 200 2 25°C 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 dIF/ dt (A/µs) Fig. 15- Typical Diode IREC vs. diF/dt VCC= 600V; IF= 50A dIF/ dt (A/µs) Fig. 16- Typical Diode tRR vs. diF/dt VCC= 600V; IF= 50A 6 GB75YF120N Bulletin I27209 01/06 1600 1400 1200 1000 16 125°C 14 12 10 typical value QRR (nC) VGE (V) 25°C 800 600 400 200 0 0 20 40 60 80 100 8 6 4 2 0 0 100 200 300 400 500 600 700 dIF/ dt (A/µs) Fig. 17- Typical Diode QRR vs. diF/dt VCC= 600V; IF= 50A QG, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH 1 D = 0.50 Thermal Response (ZthJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 VGE (V) 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 GB75YF120N Bulletin I27209 01/06 10 D = 0.50 0.20 Thermal Response (ZthJC ) 1 0.10 0.1 VGE (V) 0.01 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 t1, Rectangular Pulse Duration (sec) Fig 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) L L 0 DUT 1K VCC 80 V Rg DUT 1000V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit VCC ICM Driver D C diode clamp / DUT R= L 900V - 5V DUT / DRIVER Rg DUT DUT VCC VCC Rg Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.5 - Resistive Load Circuit 8 GB75YF120N Bulletin I27209 01/06 Econo2 4Pak Package Outline Dimensions are shown in millimeters (inches) 1.25 1.25 48,49 21,22 40 41 5,6,7 36 37 28 29 15,16,17 32 33 INV 600V 15A Made in Italy (beta sample) 3M01BT / 0344 46,47 23,24 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06 9