HFA25TB60

PD -2.339 HFA25TB60 HEXFRED Features • • • • • • TM Ultrafast, Soft Recovery Diode VR = 600V VF (typ.)* = 1.3V IF(AV) = 25A Qrr (typ.)= 112nC IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Benefits Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description International Rectifier's HFA25TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb p ortion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ T C = 25°C IF @ T C = 100°C IFSM IFRM IAR PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Repetitive Avalanche Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 25 225 100 2.0 125 50 -55 to +150 Units V A W C * 125°C 4/2/97 HFA25TB60 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM I RM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance Min. Typ. Max. Units 600 ––– ––– ––– ––– ––– ––– ––– ––– ––– 1.3 1.7 1.5 2.0 1.3 1.7 1.5 20 600 2000 55 100 8.0 ––– V V µA pF nH Test Conditions IR = 100µA IF = 25A See Fig. 1 IF = 50A IF = 25A, T J = 125°C See Fig. 2 VR = VR Rated TJ = 125°C, VR = 0.8 x VR R atedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5, 6 & 16 Peak Recovery Current See Fig. 7& 8 Reverse Recovery Charge See Fig. 9 & 10 Peak Rate of Fall of Recovery Current During tb See Fig. 11 & 12 Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 23 ––– 50 75 ns 105 160 4.5 10 A 8.0 15 112 375 nC 420 1200 250 ––– A/µs 160 ––– Test Conditions IF = 1.0A, dif /dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C I F = 25A TJ = 25°C TJ = 125°C V R = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead‚ Rθ JC RθJAƒ RθCS„ Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Mounting Torque Min. –––– –––– –––– –––– –––– –––– 6.0 5.0 Typ. –––– –––– –––– 0.5 2.0 0.07 –––– –––– Max. 300 1.0 80 –––– –––– –––– 12 10 Units °C K/W g (oz) Kg-cm lbf•in  L=100µH, duty cycle limited by max TJ ‚ 0.063 in. from Case (1.6mm) for 10 sec ƒ Typical Socket Mount „ Mounting Surface, Flat, Smooth and Greased HFA25TB60 100 10000 Reverse Current - IR (µA) T = 150°C J 1000 100 10 1 0.1 0.01 0 100 200 300 400 500 TJ= 125°C Instantaneous Forward Current - I F (A) TJ = 150°C T = 125°C J J TJ = 25°C A 600 T = 25°C 10 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1000 A Junction Capacitance -CT (pF) T = 25°C J 100 1 0.6 A 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 1 10 100 A 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics HFA25TB60 140 VR = 200V TJ = 125°C TJ = 25°C 120 25 30 VR = 200V TJ = 125°C TJ = 25°C 100 20 I F = 50A I F = 25A I F = 10A trr- (nC) 80 I F = 50A I F = 25A I F = 10A Irr- ( A) A 15 60 10 40 5 20 100 di f /dt - (A/µs) 1000 0 100 A di f /dt - (A/µs) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt 1400 VR = 200V TJ = 125 °C TJ = 25°C Fig. 6 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125°C TJ = 25°C 1200 1000 I F = 50A I F = 25A IF = 10A 800 di (rec) M/dt- (A /µs) Qrr- (nC) 1000 I F = 50A I F = 25A I F = 10A 600 400 200 A 0 100 di f /dt - (A/µs) 1000 100 100 A di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. di f/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt HFA25TB60 3 IF t rr ta tb 4 REVERSE RECOVERY CIRCUIT VR = 200V 0 Q rr I RRM 2 0.5 I RRM di(rec)M/dt 5 0.01 Ω L = 70µH D.U.T. D IRFP250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and I RRM t rr X IRRM Qrr = 2 dif/dt ADJUST G 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured 5. di(rec)M/dt - Peak rate of change of from zero crossing point of negative current during tb portion of trr going IF to point where a line passing through 0.75 IRRM and 0.50 I RRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions L = 100µH HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V I L(PK) DUT DECAY TIME V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms HFA25TB60 Conforms to JEDEC Outline TO-220AC Dimensions in millimeters and inches WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/97