HFA40HF120

PD-20376 HFA40HF120 HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount CATHODE ANODE TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) VR = 1200V VF = 3.1V Qrr = 510 nC di(rec)M/dt = 350A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM SMD -1 Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 100°C IFSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current  Single Pulse Forward Current ‚ Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 11 190 83 -55 to +150 Units V A W °C Thermal - Mechanical Characteristics Parameter RθJC Junction-to-Case, Single Leg Conducting Weight Typ. — 2.6 Max. 1.5 — Units °C/W g Note:  D.C. = 50% rect. wave ‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms www.irf.com 1 6/30/99 HFA40HF120 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage Min. Typ. Max. Units 1200 — — — — — — — — — — — — — 28 2.8 — 3.1 4.0 2.7 10 1.0 42 — V V µA mA pF nH Test Conditions IR = 100µA IF = 11A IF = 22A See Fig. 1 IF = 11A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 960V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire IRM CT LS Max Reverse Leakage Current Junction Capacitance Series Inductance Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M /dt1 di(rec)M /dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Min. Typ. Max. Units — — — — — — — — 80 130 7.25 10.2 340 825 230 160 120 ns 195 10.9 A 15.3 510 nC 1240 350 A/µs 240 Test Conditions TJ = 25°C See Fig. TJ = 125°C 5 IF = 11A TJ = 25°C See Fig. TJ = 125°C 6 VR = 200V TJ = 25°C See Fig. TJ = 125°C 7 dif/dt = 200A/µs T J = 25°C See Fig. TJ = 125°C 8 Legend: 1 - Cathode 2 - N/C 3 - Anode IR Case Style SMD-1 2 www.irf.com HFA40HF120 100 10000 R eve rse C urre nt - I R (µA ) 1000 100 10 1 0.1 0.01 0.001 0 TJ = 15 0 °C TJ = 1 25 °C Instantaneous Forw ard Current - I F (A) TJ = 150°C TJ = 125°C TJ = 25°C 10 T J = 2 5 °C T J = -5 5°C 300 600 900 1200 R e ve rse V o lta g e - V R ( V ) Fig. 2 - Typical Reverse Current vs. Reverse Voltage Ju nction C a pa citan ce - C T (p F ) 1000 A TJ = 25°C 100 1 0.0 2.0 4.0 6.0 8.0 10.0 F orward V olta g e Drop - V FM ( V ) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 1 10 100 1000 R e verse V olta g e - V R ( V ) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC) 1 D = 0.50 0.20 0.10 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.1 1 10 0.1 0.05 0.02 0.01 0.01 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA40HF120 250 100 200 I F = 22A I F = 11A I F = 5.5A I F = 22 A IF = 1 1 A I F = 5 .5 A trr - (n s ) 150 Irr- ( A) VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 10 100 50 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 0 100 d i f /d t - ( A / µ s ) 1000 1 100 di f /d t - ( A / µ s ) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt, Fig. 6 - Typical Recovery Current vs. dif/dt, 10000 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C I F = 22 A IF = 11A I F = 5 .5A d i(re c )M /d t - (A /µ s ) 1000 Q R R - (n C ) 1000 100 I F = 5.5A I F = 11A VR = 2 0 0 V TJ = 1 2 5 °C TJ = 2 5 °C 100 100 1000 10 100 IF = 22A d i f /d t - ( A / µ s ) 1000 d i f /d t - ( A / µ s ) Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt 4 www.irf.com HFA40HF120 3 IF t rr ta tb 4 R E V E R S E R E C O V E R Y C IR C U IT VR = 200V 0 Q rr 2 I RRM 0 .5 I R R M d i(re c)M /d t 5 0.0 1 Ω L = 7 0µ H D .U .T . D G IR F P 2 5 0 S 1 0 .7 5 I R R M d i f /d t 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr d if/d t ADJUST 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 www.irf.com 5