HFA40HF60C

PD-91796 PRELIMINARY HFA40HF60C Ultrafast, Soft Recovery Diode VR = 600V VF = 1.56V Qrr = 270nC HEXFRED Features TM (ISOLATED BASE) • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount ANODE COMMON CATHODE ANODE di(rec)M/dt = 345 A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM SMD-1 Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 100°C IFSM @ TC = 25°C PD @ TC = 25°C TJ TSTG D.C. Reverse Voltage Continuous Forward Current  Single Pulse Forward Current ‚ Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 30 150 63 -55 to +150 Units V A W °C Thermal - Mechanical Characteristics Parameter RθJC Junction-to-Case, Single Leg Conducting Weight Typ. — 2.6 Max. 2.0 — Units °C/W g Note:  D.C. = 50% rect. wave ‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms www.irf.com 1 8/20/98 HFA40HF60C Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage Min. Typ. Max. Units 600 — — — — — — — — — — — — — 24 2.8 — 1.56 1.92 1.51 10 1.0 36 — V V µA mA pF nH Test Conditions IR = 250µA IF = 15A IF = 30A See Fig. 1 IF = 15A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 480V VR = 200V See Fig. 3 Measured from center of bond pad to end of anode bonding wire IRM CT LS Max Reverse Leakage Current Junction Capacitance Series Inductance Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Min. Typ. Max. Units — — — — — — — — 54 94 5.6 7.8 180 435 300 190 88 140 7.8 11.7 270 650 345 285 ns A nC A/µs Test Conditions TJ = 25°C See Fig. TJ = 125°C 5 IF = 15A TJ = 25°C See Fig. TJ = 125°C 6 VR = 200V TJ = 25°C See Fig. TJ = 125°C 7 dif/dt = 200A/µs T J = 25°C See Fig. TJ = 125°C 8 Case Outline and Dimensions — SMD-1 Lead Assignments : 1 - Common Cathode 2, 3 - Anode IR Case Style SMD-1 Dimensions in millimeters and (inches) 2 www.irf.com HFA40HF60C 100 1000 R e v e rs e C u rre n t - I R (µ A ) 100 10 1 0.1 0.01 0.001 0.0001 0 TJ = 150°C TJ = 125°C In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) TJ = 150°C TJ = 125°C TJ = 25°C 10 TJ = 25°C 200 400 600 R e ve rse V o lta g e - V R (V ) Fig. 2 - Typical Reverse Current vs. Reverse Voltage J u n c tio n C a p a c ita n ce - C T (p F ) 1000 A TJ = 25 °C 100 1 0.0 1.0 2.0 3.0 4.0 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 10 1 10 100 1000 R e v e rs e V o lta g e - V R ( V ) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA40HF60C 150 100 120 I F = 30A IF = 15A I F = 7.5A VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C I F = 30A I F = 15A Q RR -- (nS) ) TR R (n C 90 I IR R M - (A ) I F = 7.5A 10 60 30 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 0 100 d i f /d t - (A /µ s ) 1000 1 100 1000 d i f /d t - (A /µ s) Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt 1200 10000 I F = 30 A I F = 1 5A 900 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C I F = 7 .5A d i(re c)M /d t - (A /µ s ) 1000 Q R R - (n C ) 600 100 300 I F = 7.5A I F = 15A I F = 30A VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 0 100 d i f /d t - (A /µ s ) 1000 10 100 1000 d i f /d t - (A /µ s ) Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt 4 www.irf.com HFA40HF60C 3 IF t rr ta tb 4 R E V E R S E R E C O V E R Y C IR C U IT V R = 2 00 V 0 Q rr 2 I RRM 0.5 I R R M di(rec)M /dt 5 0.01 Ω L = 70µH D .U .T. D d if/d t A D JU S T G I R F P 2 50 S 1 0.75 I R R M di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/98 www.irf.com 5