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HFA75MB40C

HFA75MB40C

  • 厂商:

    IRF

  • 封装:

  • 描述:

    HFA75MB40C - Ultrafast, Soft Recovery Diode HEXFRED - International Rectifier

  • 数据手册
  • 价格&库存
HFA75MB40C 数据手册
PD -2.475A HFA75MB40C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) (4-6) (7-9) ANODE 2 COMMON CATHODE VR = 400V VF(typ.)ƒ = 1V IF(AV) = 75A Qrr (typ.) = 200nC IRRM (typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Description HEXFRED d iodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM Absolute Maximum Ratings (per Leg) Parameter VR I F @ TC = 25°C I F @ TC = 100°C I FSM I AS EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Maximum Single Pulse Avalanche Current ‚ Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. D -60 (MODIFIED T0-249AA) Max. 400 75 36 300 5.0 1.4 125 50 -55 to +150 A Units V A mJ W °C 300 (0.063 in. (1.6mm) from case) Thermal - Mechanical Characteristics Parameter RθJC RθCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-Sink, Flat, Greased Surface Weight Mounting Torque Min. –––– –––– –––– –––– 35 (4.0) Typ. –––– –––– 0.10 58 (2.0) –––– Max. 1.0 0.50 –––– –––– 50 (5.7) Units °C/W K/W g (oz) lbf•in (N•m) Note:  Limited by junction temperature ‚ L = 100µH, duty cycle limited by max TJ ƒ 125°C 5/5/97 HFA75MB40C Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage Min. Typ. Max. Units 400 ––– ––– 1.1 ––– 1.3 ––– 1.0 ––– 0.50 ––– 0.75 ––– 90 ––– 9.2 ––– 1.3 1.5 1.2 3.0 4.0 125 ––– V V µA mA pF nH Test Conditions I R = 100µA I F = 35A I F = 75A I F = 35A, TJ = 125°C V R = VR Rated TJ = 125°C, VR = 320V VR = 200V Lead to lead 5mm from See Fig. 1 See Fig. 2 See Fig. 3 package body I RM CT LS Max Reverse Leakage Current Junction Capacitance Series Inductance Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 30 ––– 67 100 ns 110 170 6.0 11 A 9.0 16 200 540 nC 500 1300 240 ––– A/µs 190 ––– Test Conditions IF = 1.0A, dif /dt = 200A/µs, VR = 30V TJ = 25°C See Fig. TJ = 125°C 5 I F = 35A TJ = 25°C See Fig. TJ = 125°C 6 VR = 200V TJ = 25°C See Fig. TJ = 125°C 7 dif/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 8 Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb 6.60 (0.260) 6.10 (0.240) 12.70 (0.500) REF. 50.80 (2.000) REF. 4.95 (0.195) DIA. 4.45 (0.175) (4 PLCS.) 25.65 (1.010) 25.15 (0.990) 1 9 1.14 (0.045) 0.76 (0.030) 3.93 (0.155) 3.68 (0.145) (8 PLCS.) 13.21 (0.520) 12.70 (0.500) 1.14 (0.045) 0.89 (0.035) * (9 PLCS.) LEAD ASSIGNMENTS 1-3 ANODE 4-6 CATHODE 7-9 ANODE BASE (ISOLATED) A * PRE-SOLDER DIP DIMENSIONS 38.35 (1.510) 1.14 (0.045) * 0.89 (0.035) 37.85 (1.490) 1.27 (0.050) REF. 10.16 (0.400) 8.38 (0.330) Outline D-60 (Modfied JEDEC TO - 249AA) Dimensions in millimeters and inches 6.60 (0.260) 6.10 (0.240) 61.21 (2.410) 60.71 (2.390) 3.30 (0.130) 3.05 (0.120) HFA75MB40C 1000 10000 Reverse Current - I R (µA) TJ = 150°C 1000 Instantaneous Forward Current - IF (A) 100 TJ = 125°C 10 100 1 T = 25°C J 0.1 0 100 200 300 400 TJ = 150 °C TJ = 125°C TJ = 25°C 10 Fig. 2 - Typical Reverse Current vs. Reverse Voltage, (per Leg) Junction Capacitance - C T (pF) 1000 Reverse Voltage - VR (V) A TJ = 25 °C 100 1 0.4 0.8 1.2 1.6 2.0 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, (per Leg) 10 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, (per Leg) Thermal Impedance - Z thJC (K/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 P DM t 1 t2 Single Pulse (Thermal Resistance) 0.01 Notes: 1. Duty factor D = t1 / t 2 2. Peak T = PDM x Z thJC + T J C 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics, (per Leg) HFA75MB40C 160 100 140 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) I F =100A 10 100 I F = 100A 80 I F =35A I F = 20A IF = 35A I F = 20A 60 40 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 5 - Typical Reverse Recovery vs. di f/dt, (per Leg) 2500 Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) 10000 VR = 200V TJ = 125 °C TJ = 25°C 2000 VR = 200V TJ = 125 °C TJ = 25°C 1500 I F = 100A I F = 35A 1000 di(rec)M/dt - (A/µs) Q RR - (nC) IF = 20A 1000 IF = 35A I F = 20A IF = 100A 500 0 100 di f /dt - (A/µs) 1000 100 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. di f/dt, (per Leg) Fig. 8 - Typical di (rec)M/dt vs. dif/dt, (per Leg) HFA75MB40C 3 IF t rr ta tb 4 REVERSE RECOVERY CIRCUIT VR = 200V 0 Q rr I RRM 2 0.5 I RRM di(rec)M/dt 5 0.01 Ω L = 70µH D.U.T. D IRFP250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr dif/dt ADJUST G 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) DUT DECAY TIME V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/97
HFA75MB40C 价格&库存

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