HFA80FA120

Bulletin PD-20395 rev. A 01/02 HFA80FA120 HEXFREDTM Features • • • • Fast Recovery Time Characteristic Electrically Isolated Base Plate Large Creepage Distance Between Terminal Simplified Mechanical Designs, Rapid Assembly Ultrafast, Soft Recovery Diode VR = 1200V VF(typ) = 2.6V IF(AV) = 80A trr (typ) = 25ns Description/ Applications The dual diode series configuration (HFA80FA120) is used for output rectification or frewheeling/ clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters. Absolute Maximum Ratings Parameters VR IF IFSM IFRM PD VISOL TJ, TSTG Cathode-to-Anode Voltage Continuous Forward Current, TC = 60°C Single Pulse Forward Current, TJ = 25°C Square wave, 20KHz, TC = 60°C Max Power Dissipation, TC = 100°C Max Power Dissipation, TC = 25°C RMS Isolation Voltage, Any Terminal to Case, t = 1 min Operating Junction and Storage Temperatures 71 178 2500 - 55 to 150 V °C W Per Leg Per Leg Max 1200 40 400 72 Units V A Maximum Repetitive Forward Current, Rated VR, Case Styles HFA80FA120 K2 A2 K1 A1 SOT-227 www.irf.com 1 HFA80FA120 Bulletin PD-20395 rev. A 01/02 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VBR VFM Cathode Anode Breakdown Voltage Forward Voltage Min Typ Max Units Test Conditions 1200 2.6 2.9 3.4 2.0 0.5 43 3.0 3.3 2 V V V V µA mA pF I R = 100µA I F = 25A I F = 40A I F = 80A, T J = 125°C V R = VR Rated T J = 125°C, VR = 0.8 x VR Rated V R = 200V Fig. 3 Fig. 2 Fig. 1 IRM Reverse Leakage Current - CT Junction Capacitance - Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified) Parameters trr Reverse Recovery Time Min Typ Max Units Test Conditions 25 52 110 5.9 10.8 160 630 nC A ns I F = 1A, diF/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C T J = 25°C TJ = 125°C T J = 25°C TJ = 125°C IF = 40A diF /dt = - 200A/µs VR = 200V IRRM Peak Recovery Current - Qrr Reverse Recovery Charge - Thermal - Mechanical Characteristics Parameters RthJC RthCS Wt T Junction to Case, Single Leg Conducting Both Leg Conducting Case to Heat Sink, Flat, Greased Surface Weight Mounting Torque 0.05 30 1.3 g (N*m) Min Typ Max 0.7 0.35 Units °C/W K/W 2 www.irf.com HFA80FA120 Bulletin PD-20395 rev. A 01/02 100 Reverse Current - I R (µA) 10 Tj = 150˚C 1 125˚C 0.1 0.01 25˚C Instantaneous Forward Current - I F (A) 0.001 0.0001 0 10 200 400 600 800 1000 1200 Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C T (pF) Tj = 25˚C Tj = 150˚C Tj = 125˚C Tj = 25˚C 100 1 1 1.5 2 2.5 3 3.5 4 Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 10 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 (°C/W) Thermal Impedance Z thJC 0.1 0.01 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 0.001 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc . . 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 HFA80FA120 Bulletin PD-20395 rev. A 01/02 160 Allowable Case Temperature (°C) Average Power Loss ( Watts ) 200 180 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 Average Forward Current - I F(AV) (A) Fig. 6 - Forward Power Loss Characteristics 140 120 100 DC RMS Limit DC D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 80 60 40 Square wave 20 (D = 0.50) 0 0 10 20 30 40 50 60 70 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current 140 1800 1600 1400 1200 Qrr ( nC ) 120 If = 40A, Tj = 125˚C If = 20A, Tj = 125˚C 100 trr ( ns ) If = 40A, Tj = 125˚C If = 20A, Tj = 125˚C 1000 800 600 400 80 60 If = 40A, Tj = 25˚C If = 20A, Tj = 25˚C 40 If = 40A, Tj = 25˚C If = 20A, Tj = 25˚C 200 20 100 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery vs. di F /dt 1000 0 100 di F /dt (A/µs ) 1000 Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR 4 www.irf.com HFA80FA120 Bulletin PD-20395 rev. A 01/02 3 IF t rr ta tb 4 VR = 200V 0 2 Q rr I RRM 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 1 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 di f /dt 4. Qrr - Area under curve defined by t rr and IRRM Q rr = t rr x I 2 RRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions SOT-227 Package Details 4.40 (.173 ) 4.20 (.165 ) 4 38.30 ( 1.508 ) 37.80 ( 1.488 ) -A3 CHAMFER 2.00 ( .079 ) X 457 LEAD ASSIGMENTS E C 4 1 S LEAD ASSIGNMENTS 3 S G D 6.25 ( .246 ) 12.50 ( .492 ) 1 7.50 ( .295 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 4X 2.10 ( .082 ) 1.90 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 2 R FULL 15.00 ( .590 ) 25.70 ( 1.012 ) 25.20 ( .992 ) -B4 1 EG IGBT A1 K2 3 2 K1 A2 HEXFRED K22 K2 A1 A2 3 2 HEXFET 4 1 K1 A1 K1 A2 HEXFRED 0.25 ( .010 ) M C A M B M 2.10 ( .082 ) 1.90 ( .075 ) -C0.12 ( .005 ) 12.30 ( .484 ) 11.80 ( .464 ) www.irf.com 5 HFA80FA120 Bulletin PD-20395 rev. A 01/02 SOT-227 Package Details Tube QUANTITIES PER TUBE IS 10 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code HF 1 A 2 80 3 FA 4 120 5 1 2 3 4 5 - Hexfred Family Process Designator (A = Electron Irradiated) Average Current (80 = 80A) Package Outline (FA = SOT-227) Voltage Rating (120 = 1200V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 01/02 6 www.irf.com