HFB08PB120

Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 1 CATHODE BASE CATHODE VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A 3 ANODE 2 4 2 trr (typ.) = 28ns di(rec) M /dt (typ.)*= 85A /µs Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count TO-247AC (Modified) Description International Rectifier's HFA08PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG * 125°C 1 Max 1200 8.0 130 32 73.5 29 - 55 to 150 Units V A W °C Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range HFA08PB120 Bulletin PD-2.365 rev. B 11/00 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR Cathode Anode Breakdown Voltage VFM Max. Forward Voltage IRM Max. Reverse Leakage Current CT LS Junction Capacitance Series Inductance 2.6 3.4 2.4 0.31 135 11 8.0 3.3 4.3 3.1 10 1000 20 pF nH µA V IF = 8.0A IF = 16A IF = 8.0A, TJ = 125°C VR = VR Rated See Fig. 2 See Fig. 1 Min Typ Max Units 1200 V Test Conditions IR = 100µA TJ = 125°C, VR = 0.8 x VR RatedD R VR = 200V Rated See Fig. 3 Measured lead to lead 5mm from pkg body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Reverse Recovery Time See Fig. 5, 10 Min Typ Max Units 28 63 106 4.5 6.2 140 335 133 85 95 160 8.0 11 380 880 A/µs nC A ns Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 8.0A VR = 200V di f /dt = 200A/µs di(rec)M /dt1 Peak Rate of Recovery di(rec)M /dt2 Current During tb See Fig. 8 Thermal - Mechanical Characteristics Parameter Tlead ! RthJC RthJA " RthCS$ Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Min - Typ 0.25 6.0 0.21 - Max 300 1.7 40 12 10 Units °C k/W g (oz) Kg-cm lbf•in Mounting Torque 6.0 5.0 ! 0.063 in. from Case (1.6mm) for 10 sec "#Typical Socket Mount $ Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA08PB120 Bulletin PD-2.365 rev. B 11/00 100 1000 100 10 1 0.1 0.01 0 300 600 900 1200 Reverse Voltage - VR (V) Fig. 2 - Typ. Values Of Reverse Current Vs. Reverse Voltage T = 150˚C J 125˚C 100˚C Reverse Current - I R (µA) 25˚C Instantaneous Forward Current - I F (A) 10 100 Junction Capacitance - CT (pF) T = 25˚C J 10 T = 150˚C J T = 125˚C J T = 25˚C J 1 0 2 4 6 8 10 Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics 1 1 10 100 1000 10000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 10 Thermal Impedance Z thJC (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM 0.1 Single Pulse (Thermal Resistance) Notes: t1 t2 1. Duty factor D = t1/ t 2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (Seconds) 0.1 1 Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 HFA08PB120 Bulletin PD-2.365 rev. B 11/00 160 140 120 trr ( ns ) 20 IF = 8 A IF = 4 A V R= 160V T J = 125˚C T J = 25˚C 16 IF = 8 A IF = 4 A 100 80 60 Irr ( A) 12 8 4 40 20 100 di F /dt (A/µs ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt VR = 160V TJ = 125˚C TJ = 25˚C 1000 0 100 di F /dt (A/µs ) 1000 Fig. 6 - Typical Recovery Current Vs. dif /dt 1200 VR = 160V TJ = 125˚C TJ = 25˚C 1000 IF = 8 A IF = 4 A 1000 IF = 8 A IF = 4 A 600 di(REC) M/dt (A/µs ) 800 Qrr ( nC ) 100 400 200 VR = 160V TJ = 125˚C TJ = 25˚C 0 100 di F /dt (A/µs ) 1000 10 100 di F /dt (A/µs ) 1000 Fig. 8 - Typical Stored Charge vs. dif /dt Fig. 7 - Typical di(REC) M/dt vs. dif /dt 4 www.irf.com HFA08PB120 Bulletin PD-2.365 rev. B 11/00 Reverse Recovery Circuit VR = 200V 0.01 Ω L = 70µH D.U.T. di F /dt dif/dt ADJUST D G IRFP250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 IF 0 t rr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di F /dt di f /dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA08PB120 Bulletin PD-2.365 rev. B 11/00 Outline Table Conforms to JEDEC Outline TO-247AC Dimensions in millimeters and (inches) Ordering Information Table Device Code HF 1 A 2 08 3 PB 120 4 5 1 2 3 4 5 - Hexfred Family Process Designator Current Rating Package Outline Voltage Rating A B = Electron Irradiated = Platinum Diffused (08 = 8A) (PB = TO-247, 2 pins) (120 = 1200V) WORLD HEADQUA EUROPEAN HEADQUA IR C A IR GER IR IR FA R IR SOUTHEAS T IR T http 6 www.irf.com HFA08PB120 Bulletin PD-2.365 rev. B 11/00 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. http://www.irf.com www.irf.com 7