HFB50HI20

PD - 94324A HFB50HI20 FRED Features • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ultrafast, Soft Recovery Diode VR = 200V IF(AV) = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current,  TC = 87°C Single Pulse Forward Current, ‚ TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 200 50 450 167 -55 to +150 Units V A W °C Note:  D.C. = 50% rect. wave ‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE (ISOLATED BASE) CATHODE ANODE ANODE TO-259AA www.irf.com 1 02/20/06 HFB50HI20 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VF Cathode Anode Breakdown Voltage Forward Voltage See Fig. 1 ƒ Min. Typ. Max. Units 200 — — — — — — — — — — — — 8.7 — 1.34 1.28 1.7 1.69 10 100 330 — µA µA pF nH V V Test Conditions IR = 100µA IF = 50A, TJ = -55°C „ IF = 50A, TJ = 25°C „ IF = 100A, TJ = 25°C „ See Fig. 2 IF = 100A, T J = 125°C „ VR = VR Rated VR = V R Rated, TJ = 125°C V R = 200V Measured from anode lead to cathode lead, 6 mm ( 0.025 in ) from package IR Reverse Leakage Current See Fig. 2 ƒ Junction Capacitance, See Fig. 3 Series Inductance — — — — CT LS Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Min. — — — — — — — — — Typ. Max. Units — 42 69 4.4 8.7 108 314 390 570 35 — — — — — — — — ns ns Test Conditions = 30V, dif/dt = 300A/µs See Fig. 5 IF = 50A See Fig. 6 VR = 160V See Fig. 7 dif/dt = 200A/µs See Fig. 8 IF = 0.5A,VR TJ = 25°C TJ = 125°C TJ = 25°C A A TJ = 125°C TJ = 25°C nC nC TJ = 125°C TJ = 25°C A/µs A/µs TJ = 125°C Thermal - Mechanical Characteristics Parameter RthJC Wt Junction-to-Case Weight Typ. — 10.9 Max. 0.75 — Units °C/W g Note: ƒ Pulse Width < 300µs, Duty Cycle < 2% „ Pins 2 and 3 externally tied together 2 www.irf.com HFB50HI20 100 100 125°C 100°C Reverse Current - I R (µA) 10 75°C 1 0.1 Instantaneous Forward Current - I F (A) 25°C 0.01 0.001 0 40 80 120 160 200 10 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current Vs. Reverse Voltage 10000 Junction Capacitance - C T (pF) Tj = 125°C Tj = 25°C T J = 25°C 1000 Tj = -55°C 1 0.0 0.4 0.8 1.2 1.6 2.0 100 0 40 80 120 160 200 Forward Voltage Drop - V F (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current 1 Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 PDM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFB50HI20 100 VR = 160V TJ = 125°C TJ = 25°C 80 100 IF = 100A IF = 50A IRRM - ( A ) trr - ( ns ) 60 IF = 25A IF = 50A IF = 100A IF = 25A 10 40 VR = 160V TJ = 125°C TJ = 25°C 20 100 1000 1 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt, Fig. 6 - Typical Recovery Current Vs. dif/dt, 1000 IF = 100A IF = 25A IF = 50A 10000 IF = 25A di ( rec )M / dt - ( A / µs ) IF = 50A IF = 100A 1000 Qrr - ( nC ) 100 VR = 160V TJ = 125°C TJ = 25°C 10 100 1000 VR = 160V TJ = 125°C TJ = 25°C 100 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt Fig. 8 - Typical di(rec)M/dt Vs. dif/dt 4 www.irf.com HFB50HI20 3 IF trr ta tb 4 REVERSE RECOVERY CIRCUIT VR = 200V 0 Q rr 2 I RRM 0.5 I RRM di(rec)M/dt 5 0.01 Ω L = 70µH D.U.T. D G IRFP250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr dif/dt ADJUST 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 I RRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions Case Outline and Dimensions — TO-259AA QDIÃ6TTDBIH@IUT 1 = CATHODE 2 = ANODE 3 = ANODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2006 www.irf.com 5