IR1166SPBF

www.DataSheet4U.com Data Sheet PD-97237 IR1166SPbF SmartRectifierTM CONTROL IC Features • • • • • • • • Secondary side high speed SR controller DCM, CrCM and CCM flyback topologies 200V proprietary IC technology Max 500KHz switching frequency Anti-bounce logic and UVLO protection 4A peak turn off drive current Micropower start-up & ultra low quiescent current 10.7V gate drive clamp • • • • • • • 50ns turn-off propagation delay Vcc range from 11.3V to 20V Direct sensing of MOSFET drain voltage Minimal component count Simple design Lead-free Compatible with 1W Standby, Energy Star, CECP, etc. Description IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable frequency modes. Package 8-Lead SOIC IR1166S Application Diagram Vin Rs XFM Cs Ci 1 2 3 RMOT 4 Rdc U1 VCC OVT MOT EN IR1166S VGATE GND VS VD 8 Cdc 6 5 Rg Co Rtn Q1 *Please note that this data sheet contains advanced information that could change before the product is released to production. www.irf.com LOAD 7 1 www.DataSheet4U.com IR1166S Absolute Maximum Ratings Stress beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions are not implied. All voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under board mounted and still air conditions. Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation ESD Protection Switching Frequency Symbol VCC VEN VD VD VS VGATE TJ TS RθJA PD VESD fsw Min. -0.3 -0.3 -3 -5 -3 -0.3 -40 -55 Max. 20 20 200 200 20 20 150 150 128 970 1.5 500 Units V V V V V V °C °C °C/W mW kV kHz SOIC-8 Remarks VCC=20V, Gate off SOIC-8, TAMB=25°C Human Body Model* * Per EIA/JESD22-A114-B( discharging a 100pF capacitor through a 1.5kΩ series resistor). www.irf.com 2 www.DataSheet4U.com IR1166S Electrical Characteristics The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range TJ from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition. Supply Section Parameters Supply Voltage Operating Range VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis Operating Current Quiescent Current Start-up Current Sleep Current Enable Voltage High Enable Voltage Low Enable Pull-up Resistance Symbol VCC VCC ON VCC UVLO VCC HYST ICC IQCC ICC START ISLEEP VENHI VENLO REN Min. 11.4 9.8 8.4 1.4 Typ. 10.6 9 1.57 8 47 1.7 92 145 2.71 1.6 1.5 Max. 18 11.3 9.7 1.7 10 65 2.2 200 200 Units V V V V mA mA µA µA V V MΩ GBD Remarks CLOAD=1nF, fsw = 400kHz CLOAD=10nF, fsw = 400kHz VCC=VCC ON - 0.1V VEN=0V, VCC =15V Comparator Section Parameters Turn-off Threshold Turn-on Threshold Hysteresis Input Bias Current Input Bias Current Comparator Input Offset Input CM Voltage Range Symbol VTH1 VTH2 VHYST IIBIAS1 IIBIAS2 VOFFSET VCM Min. -7 -15 -23 -150 Typ. -3 -10.3 -18.7 63 1 23 Max. 0 -7 -15 -50 7.5 100 2 2 Units mV mV mV µA µA mV V VD = -50mV VD = 200V GBD Remarks OVT = 0V, VS=0V OVT floating, VS=0V OVT = VCC, VS=0V -0.15 One-Shot Section Parameters Blanking pulse duration Reset Threshold Hysteresis Symbol tBLANK VTH3 VHYST3 Min. 10 Typ. 15 2.5 5.4 40 Max. 20 Units µs V V mV Remarks VCC=10V - GBD VCC=20V - GBD VCC=10V - GBD www.irf.com 3 www.DataSheet4U.com IR1166S Minimum On Time Section Parameters Minimum on time Symbol TONmin Min. 190 2.4 Typ. 251 3 Max. 290 3.6 Units ns µs Remarks RMOT =5kΩ, VCC=12V RMOT =75kΩ, VCC=12V Gate Driver Section Parameters Gate Low Voltage Gate High Voltage Rise Time Fall Time Turn on Propagation Delay Turn off Propagation Delay Pull up Resistance Pull down Resistance Output Peak Current (source) Output Peak Current (sink) ** Symbol VGLO VGTH tr1 tr2 tf1 tf2 tDon tDoff rup rdown IO source IO sink Min. 9.5 Typ. 0.2 10.7 21 181 10 44 52 35 5 1.2 1 4 Max. 0.5 12.5 Units V V ns ns ns ns Remarks IGATE = 200mA VCC=12V-18V (internally clamped) CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V CLOAD = 1nF, VCC=12V CLOAD = 10nF, VCC=12V VDS to VGATE -100mV overdrive VDS to VGATE -100mV overdrive IGATE = 1A - GBD IGATE = -200mA CLOAD = 10nF - GBD CLOAD = 10nF - GBD 80 65 ns ns Ω Ω A A Guaranteed by Design STATE AND TRANSITIONS DIAGRAM POWER ON Gate Inactive UVLO MODE VCC < VCCon Gate Inactive ICC max = 200uA VCC > VCCon and ENABLE HIGH VCC < VCCuvlo or ENABLE LOW NORMAL Gate Active www.irf.com 4 www.DataSheet4U.com IR1166S Block Diagram MOT VCC VDD ENA UVLO & REGULATOR VDD VD Min ON Time VTH1 RESET VS DRIVER VGATE COM OVT Min OFF Time Vgate RESET VTH3 VTH2 VTH1 VTH3 VDS Lead Assignments & Definitions Lead Assignment Pin# 1 1 2 3 4 VCC OVT MOT EN VGATE 8 7 6 5 2 3 Symbol VCC OVT MOT EN VD VS GND GATE Description Supply Voltage Offset Voltage Trimming Minimum On Time Enable FET Drain Sensing FET Source Sensing Ground Gate Drive Output IR1166S GND VS VD 4 5 6 7 8 www.irf.com 5 www.DataSheet4U.com IR1166S Detailed Pin Description GND: Ground This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point. The MOT programming pin controls the amount of minimum on time. Once VTH2 is crossed for the first time, the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time. The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to GND. The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1. The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming. This programming feature allows for accomodating different RDSon MOSFETs. kelvin contact as close as possible to the power MOSFET source pin. VD: Drain Voltage Sense MOT: Minimum On Time VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in properly routing the connection to the power MOSFET drain. Additional filtering and or current limiting on this pin is not recommended as it would limit switching performance of the IC. VCC: Power Supply OVT: Offset Voltage Trimming This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and GND should be placed as close as possible to the IR1166S. This pin is internally clamped. GATE: Gate Drive Output EN: Enable This is the gate drive output of the IC. Drive voltage is internally limited and provides 2A peak source and 5A peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is recommended, expecially when putting multiple FETs in parallel. Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance. This pin is used to activate the IC “sleep” mode by pulling the voltage level below 2.5V (typ). In sleep mode the IC will consume a minimum amount of current. However all switching functions will be disabled and the gate will be inactive. VS: Source Voltage Sense VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground pin (7) but must be used to create a www.irf.com 6 www.DataSheet4U.com IR1166S STATES OF OPERATION The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold voltage, VCC ON. During the time the IC remains in the UVLO state, the gate drive circuit is inactive and the IC draws a quiescent current of ICC START. The UVLO mode is accessible from any other state of operation whenever the IC supply voltage condition of VCC < VCC UVLO occurs. The sleep mode is initiated by pulling the EN pin below 2.5V (typ). In this mode the IC is essentially shut down and draws a very low quiescent supply current. GENERAL DESCRIPTION The IR1166 Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a Synchronous Rectifier (SR) MOSFET. The direction of the rectified current is sensed by the input comparator using the power MOSFET RDSon as a shunt resistance and the GATE pin of the MOSFET is driven accordingly. Internal blanking logic is used to prevent spurious transitions and guarantee operation in continuous (CCM), discountinuous (DCM) and critical (CrCM) conduction mode. VGate UVLO/Sleep Mode Normal Mode The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate driver is operating and the IC will draw a maximum of ICC from the supply voltage source. VDS VTH2 VTH1 VTH3 Input comparator thresholds The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the turn-on phase of the secondary switch (which correspond to the turn off of the primary side switch) is identical. When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2. At that point the IR1166 will drive the gate of MOSFET on which will in turn cause the conduction voltage VDS to drop down. This drop is usually accompained by some amount of ringing, that can trigger the input comparator to turn off; hence, a Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time. The programmed MOT will limit also the minimum duty www.irf.com 7 Turn-on phase www.DataSheet4U.com IR1166S cycle of the SR MOSFET and, as a consequence, the max duty cycle of the primary side switch. DCM/CrCM Turn-off phase Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where VDS will cross the turn-off threshold VTH1. This will happen differently depending on the mode of operation. In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the current will start flowing again through the body diode, IPRIM is blanked for a certain amount of time (TBLANK) after VTH1 has been triggered. The blanking time is internally set. As soon as VDS crosses the positive threshold VTH3 also the blanking time is terminated and the IC is ready for next conduction cycle. CCM Turn-off phase In CCM mode the turn off transition is much steeper and dI/dt involved is much higher. The turn on phase is identical to DCM or CrCM and therefore won’t be repeated here. During the SR FET conduction phase the current will decay linearly, and so will VDS on the SR FET. IPRIM VPRIM VPRIM T1 ISEC VSEC T2 T3 time T1 ISEC VSEC time T2 time Primary and secondary currents and voltages for DCM mode IPRIM Primary and secondary currents and voltages for CCM mode time VPRIM T1 ISEC VSEC T2 time Once the primary switch will start to turn back on, the SR FET current will rapidly decrease crossing VTH1 and turning the gate off. The turn off speed is critical to avoid cross conduction on the primary side and reduce switching losses. also in this case a blanking period will be applied, but given the very fast nature of this transition, it will be reset as soon as VDS crosses VTH3. time Primary and secondary currents and voltages for CrCM mode causing the VDS voltage to jump negative. Depending on the amount of residual current, VDS may trigger once again the turn on threshold: for this reason VTH2 www.irf.com 8 www.DataSheet4U.com IR1166S VTH3 ISEC VDS T1 VTH1 T2 time VTH2 Gate Drive time Blanking MOT time Secondary side CCM operation VTH3 ISEC VDS T1 VTH1 T2 time VTH2 Gate Drive time Blanking MOT 10us blanking Secondary side DCM/CrCM operation www.irf.com 9 www.DataSheet4U.com IR1166S 10 11 VCC UVLO Threshold (V) 1 10 ISupply (mA) 0.1 9 VCC ON VCC UVLO 0.01 5 10 15 20 8 -50 0 50 100 150 Supply Voltage (V) Temperature ( °C ) Fig 1. Supply Current vs. Supply Voltage Fig 2. Under Voltage Lockout vs. Temp. 0 0 -5 VTH1 Threshold (mV) -10 VTH2 Threshold (mV) OVT = GND OVT = Floating OVT = VCC -50 0 50 100 150 -50 -15 -20 -100 -25 -30 -150 -50 0 50 100 150 Temperature ( °C ) Temperature ( °C ) Fig 3. VTH1 vs. Temp. Fig 4. VTH2 vs. Temp. www.irf.com 10 www.DataSheet4U.com IR1166S 100 -6 Comparator Hysteresis VHYST (mV) VS = -150mV VS= 0V VS= +2V VTH1 Threshold (mV) 50 -9 0 -50 0 50 100 150 -12 -50 0 50 100 150 Temperature ( °C ) Temperature ( °C ) Fig 5. Comparator Hysteresis vs. Temp. Fig 6. VTH1 vs. Temp. and Common Mode (OVT=Floating) -50 -50 -100 Comparator Hysteresis (mV) VS = -150mV VS= 0V VS= +2V VTH2 Threshold (mV) -100 VS = -150mV VS= 0V VS= +2V -150 -50 0 50 100 150 -150 -50 0 50 100 150 Temperature ( °C ) Temperature ( °C ) Fig 7. VTH2 vs. Temp. and Common Mode (OVT=GND) www.irf.com Fig 8. Comparator Hysteresis vs. Temp. and Common Mode (OVT=GND) 11 www.DataSheet4U.com IR1166S 4 50 Minimum On Time (µs) 3 2 Input Bias Current (IBIAS2) (µA) 25 1 RMOT = 5k RMOT= 75k 0 -50 0 50 100 150 TJ= -25°C TJ= 25°C TJ= 125°C 0 0 50 100 150 200 Temperature ( °C ) Drain Sense Voltage (VD) (V) Fig 9. MOT vs. Temp. Fig 10. Input Bias Current vs. VD. 20 20 Maximum Allowable VCC Voltage (V) 19 18 17 16 15 14 13 12 11 50 Maximum Allowable VCC Voltage (V) Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 19 18 17 16 15 14 13 12 11 Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 100 150 200 250 300 350 400 450 500 50 100 150 200 250 300 350 400 450 500 Max. Synchronous HEXFET Switching Frequency (kHz) Max. Synchronous HEXFET Switching Frequency (kHz) Fig 11. Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125°C, TIC = 85°C, external RG=1W, 1Ω HEXFET Gate Resistance included www.irf.com Fig 12. Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125°C, TIC = 85°C, external RG=2W, 1Ω HEXFET Gate Resistance included 12 www.DataSheet4U.com IR1166S 20 Maximum Allowable VCC Voltage (V) 18 17 16 15 14 13 12 11 50 Maximum Allowable VCC Voltage (V) 19 Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 20 19 18 17 16 15 14 13 12 11 Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 100 150 200 250 300 350 400 450 500 50 100 150 200 250 300 350 400 450 500 Max. Synchronous HEXFET Switching Frequency (kHz) Maximum Synchronous HEXFET Switching Frequency (kHz) Fig 13. Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125°C, TIC = 85°C, external RG=4W, 1Ω HEXFET Gate Resistance included Fig 14. Max VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125°C, TIC = 85°C, external RG=6W, 1Ω HEXFET Gate Resistance included Figures 11-14 shows the maximum allowable VCC voltage vs. maximum switching frequency for different loads which are calculated using the design methodology discussed in AN1087. www.irf.com 13 www.DataSheet4U.com IR1166S VCC VCC ON VCC UVLO t UVLO NORMAL UVLO Fig. 14 - Vcc Under Voltage Lockout VTH1 V DS V TH2 t Don V Gate 90% 50% 10% t rise Fig. 15 - Timing Diagrams t Doff tfall www.irf.com 14 www.DataSheet4U.com IR1166S Case outline D A 5 B FOOT PRINT 8X 0.72 [.028] DIM A b c D INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A E 6.46 [.255] 1 2 3 4 e e1 H K L y .050 BAS IC .025 BAS IC .2284 .0099 .016 0° .2440 .0196 .050 8° 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8° 6X e e1 3X 1.27 [.050] 8X 1.78 [.070] A K x 45° C 0.10 [.004] y 8X c 8X b 0.25 [.010] NOT ES : A1 CAB 8X L 7 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBSTRATE. 8-Lead SOIC 01-6027 01-0021 11 (MS-012AA) 1166SPbF Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ Data and specifications subject to change without notice. 10/06 www.irf.com 15