IR2154

Preliminary Data Sheet No. PD60063I IR2154 SELF-OSCILLATING HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • Integrated 600V half-bridge gate driver 15.6V zener clamp on Vcc True micropower start up Tighter initial deadtime control Low temperature coefficient deadtime Shutdown feature (1/6th Vcc) on CT pin Increased undervoltage lockout Hysteresis (1V) Lower power level-shifting circuit Constant LO, HO pulse widths at startup Lower di/dt gate driver for better noise immunity High side output in phase with RT Excellent latch immunity on all inputs and outputs ESD protection on all leads Product Summary VOFFSET Duty Cycle Tr/Tp Vclamp Deadtime (typ.) 600V max. 50% 80/40ns 15.6V 1.2 µs Packages Description The IR2154 is an improved version of the popular IR2152 gate driver IC, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2154 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins. 8 Lead PDIP 8 Lead SOIC Typical Connection 600V MAX VCC VB HO RT VS CT Shutdown COM LO IR2154 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VLO VRT VCT ICC IRT dVs/dt PD RthJA TJ TS TL Definition High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage RT pin voltage CT pin voltage Supply current (note 1) RT pin current Allowable offset voltage slew rate Maximum power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 — -5 -50 — — — — -55 -55 — Max. 625 VB + 0.3 VB + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 25 5 50 1.0 0.625 125 200 150 150 300 Units V mA V/ns W °C/W °C Recommended Operating Conditions For proper operation the device should be used within the recommended conditions. Symbol VBs VS VCC ICC TJ Note 1: Definition High side floating supply voltage Steady state high side floating supply offset voltage Supply voltage Supply current Junction temperature Min. VCC - 0.7 -3.0 (note 2) 10 (note 3) -40 Max. VCLAMP 600 VCLAMP 5 125 Units V mA °C Note 2: Note 3: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section. Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by more than 5V. Enough current should br supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the voltage at this pin. 2 IR2154 Recommended Component Values Symbol RT CT Component Timing resistor value CT pin capacitor value Min. 10 330 Max. — — Units kΩ pF IR2154 RT vs Frequency IR2153 RT vs Frequency 1000000 100000 Frequency (Hz) 10000 330pf 470pF 1nF CT Values 1000 2.2nF 4.7nF 10nF 100 10 10 100 1000 RT (ohms) 10000 100000 1000000 Electrical Characteristics VBIAS (VCC, V BS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO. Low Voltage Supply Characteristics Symbol Definition VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP Rising VCC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage Min. 8.1 7.2 0.5 — — 14.4 Typ. 9.0 8.0 1.0 75 500 15.6 Max. 9.9 8.8 1.5 150 950 16.8 Units Test Conditions V µA V VCC ≤ VCCUVICC = 5mA 3 IR2154 Electrical Characteristics (cont.) Floating Supply Characteristics Symbol Definition IQBSUV IQBS VBSMIN ILK Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current Min. — — — — Typ. 0 30 4.0 — Max. 10 50 5.0 50 Units Test Conditions µA V µA VCC ≤ VCCUVVCC=VCCUV+ + 0.1V VB = VS = 600V Oscillator I/O Characteristics Symbol Definition fosc d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV VRTSD Oscillator frequency RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper CT ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level RT output voltage, V CC - VRT Low-level RT output voltage UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT Min. 19.4 94 48 — 0.30 — — 1.8 — — — — — — — Typ. 20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 10 Max. Units Test Conditions 20.6 106 52 1.0 1.2 — — 2.4 50 300 50 300 100 50 300 kHz % uA mA V IRT = 100µA IRT = 1mA IRT = 100µA IRT = 1mA VCC ≤ VCCUVIRT = 100 µA, VCT = 0V IRT = 1mA, VCT = 0V RT = 36.9kΩ RT = 7.43kΩ fo < 100kHz VCC = 7V mV Gate Driver Output Characteristics Symbol Definition VOH High level output voltage, VBIAS -VO VOL Low-level output voltage, VO VOL_UV UV-mode output voltage, VO tr tf tsd td Output rise time Output fall time Shutdown propogation delay Output deadtime (HO or LO) Min. — — — — — — 0.35 Typ. 0 0 0 80 45 660 0.60 Max. 100 100 100 150 100 — 0.85 Units Test Conditions mV IO = OA IO = OA IO = OA VCC ≤ VCCUV- nsec µsec 4 IR2154 Functional Block Diagram RT VB R + R R + R/2 + R/2 LOGIC DEAD TIME DELAY 15.6V LO S Q Q VCC DEAD TIME PULSE GEN HV LEVEL HV SHIFT LEVEL SHIFT Q PULSE FILTER R S VS HO CT UV DETECT COM Lead Definitions Symbol VCC RT CT COM LO VS HO VB Description Logic and internal gate drive supply voltage Oscillator timing resistor input Oscillator timing capacitor input IC power and signal ground Low side gate driver output High voltage floating supply return High side gate driver output High side gate driver floating supply Lead Assignments 8 Lead PDIP 8 Lead SOIC IR2154 5 IR2154S IR2154 8 Lead PDIP 01-3003 01 8 Lead SOIC 6 01-0021 08 IR2154 V CLAMP Vccuv+ Vcc RT R T ,C T 2/3 1/3 CT td HO td LO Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions Figure 3. Deadtime Waveform Definitions WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99 7