IR3103

PD-96992 Rev.A Half-Bridge FredFET and Integrated Driver Description IR3103 Series 0.75A, 500V The IR3103 is a gate driver IC integrated with a half bridge FredFET designed for motor drive applications up to 180W (heatsink-less). The sleek and compact single-in-line package is optimized for electronic motor control in appliance applications such as fans and compressors for refrigerators. The IR3103 offers an extremely compact, high performance half-bridge inverter in a single isolated package for two-phase and three-phase motor drivers. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power FredFET technology (HEXFET® MOSFET with ultra-fast recovery body diode characteristics), enable efficient and rugged single package construction. Propagation delays for the high and low side power FredFETs are matched thanks to advanced IC technology. Features • Output Power FredFET in Half-Bridge Configuration • High Side Gate Drive Designed for Bootstrap Operation • Bootstrap Diode Integrated into Package • Lower Power Level-Shifting Circuit • Lower di/dt Gate Drive for Better Noise Immunity • Excellent Latch Immunity on All Inputs and Outputs • ESD Protection on All Leads • Isolation 1500 VRMS min. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. Power dissipation is measured under board mounted and still air conditions. Parameter VDS VDD IO (TA=25°C) IO (TA=55°C) IO (TA=25°C) Pd VISO TJ TS TL TS Description Drain to Source Blocking Voltage DC Bus Supply Voltage (No Switching Operation) Continuous Output Current (1) Continuous Output Current (1) Pulsed Output Current (2) Package Power Dissipation @TA ≤ 55°C (3) Isolation Voltage (1min) Junction Temperature (Power MOSFET) Storage Temperature Lead Temperature (soldering, 10 seconds) Storage Temperature Max. Value 500 500 0.7 0.6 2.7 1.4 1500 -40 to +150 -40 to +150 300 -40 to +150 Units V V A A A W VRMS °C °C °C °C www.irf.com Note 1: See figure 3, fPWM=16kHz Note 2: TP=100ms, other conditions as per Figure 3, fPWM=16kHz Note 3: Single Device Operating 1 IR3103 Absolute Maximum Ratings (Continued) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. Symbol IBDF VB VO VCC VIN VSS Parameter Bootstrap Continuous Diode Forward Current High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage Low Side and Logic Fixed Supply Voltage Input Voltage LIN, HIN Min --Max 0.3 Units Conditions A TJ = 150°C, TA=55°C -0.3 525 V V B - 25 VB +0.3 V -0.3 25 V VSS-0.3 VCC-25 VCC+0.3V VCC+0.3V V Logic Ground V Recommended Operating Conditions Driver Function For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS and VO offset are tested with all supplies biased at 15V differential. Symbol VB VDD VCC VIN VSS Definition High Side Floating Supply Absolute Voltage High Voltage Supply Low Side and Logic Fixed Supply Voltage Logic Input Voltage Logic Ground Min VO+10 Note 4 10 VSS -5 Max VO+20 400 20 VCC 5 Units V V V V V Note 4: Logic operation for VO of -5 to +500V. Logic state held for VO of -5V to -VBO. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR3103 Half Bridge Electrical Characteristics @TJ= 25°C VCC=VBO=15V and TJ=25°C unless otherwise specified. VDD and VIN parameters referenced to COM Symbol V(BR)DSS IHS-LK ILS-LK RDS(ON) VSD RDS(ON) VSD VBDFM EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG COSS COSS eff. SCSOA ISC Parameter Drain-to-Source Breakdown Voltage Low Side Leakage Current Min 500 ----------------------------------------------10 --Typ --5 80 5 100 1.9 0.8 4.3 0.6 ----55 4 59 2 70 85 5 90 6 90 15 12 30 --18.5 Max --50 --105 --2.5 0.9 6.5 0.75 1.25 1.10 75 10 85 5 --115 11 126 11 --21 --------Units Conditions V µA VIN=0V, IDD/IO=250µA VDS=500V, VIN=0V VDS=500V, VIN=0V, TJ=150°C VDS=500V, VIN=0V VDS=500V, VIN=0V, TJ=150°C IO = 0.75A, VIN=5V IO = 0.75A, VIN=0V IO = 0.75A, VIN=5V, TJ=150°C IO = 0.75A, VIN=0V, TJ=150°C IF=1A IF=1A, TJ=125°C IDD/IO = 0.75A, VDD=300V, VBO/VCC=15V, L= 6.3mH Low Side Leakage Current Drain-to-Source ON Resistance Diode Forward Voltage Drain-to-Source ON Resistance Diode Forward Voltage Bootstrap Diode Forward Voltage Drop Turn-On Energy Losses Turn-Off Energy Losses Total Energy Losses Body-Diode Reverse Recovery Losses Reverse Recovery Time Turn-On Energy Losses Turn-Off Energy Losses Total Energy Losses Body-Diode Reverse Recovery Losses Reverse Recovery Time Turn-ON MOSFET Gate Charge Output Capacitance Effective Output Capacitance Short Circuit Safe Operating Area Short Circuit Drain Current µA Ω V Ω V V µJ µJ µJ µJ ns µJ µJ µJ µJ ns nC pF pF µs A Energy Losses include Body-Diode Reverse Recovery IDD/IO = 0.75A, VDD=300V, VBO/VCC=15V, L=6.3mH TJ=150°C Energy Losses include Body-Diode Reverse Recovery VDD=250V, IO=3.2A. Note 5 VDD=400V, f=1MHz. Note 5 VDD=0V to 400V. Note 5,6 TJ=150°C, VP=450V, V+= 320V,VCC=+15V TJ=150°C, VP=450V, tSC