NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
DATA SHEET XPHASE3TM PHASE IC
DESCRIPTION
The IR3507 Phase IC combined with an IR XPhase3TM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides overall system control and interfaces with any number of “Phase” ICs which each drive and monitor a single phase of a multiphase converter. The XPhase3TM architecture results in a power supply that is smaller, less expensive, and easier to design while providing higher efficiency than conventional approaches.
FEATURES IR3507 PHASE IC
• • • • • • • • • • • • • • • • Power State Indicator (PSI) interface provides the capability to maximize the efficiency at light loads. 7V/2A gate drivers (4A GATEL sink current) Converter output voltage up to 5.1 V (Limited to VCCL-1.4V) Loss-less inductor current sensing Feed-forward voltage mode control Integrated boot-strap synchronous PFET Only four external components per phase 3 wire analog bus connects Control and Phase ICs (VID, Error Amp, IOUT) 3 wire digital bus for accurate daisy-chain phase timing control without external components Anti-bias circuitry prevents excessive sag in output voltage during PSI de-assertion PSI input is ignored during power up Debugging function isolates phase IC from the converter Self-calibration of PWM ramp, current sense amplifier, and current share amplifier Single-wire bidirectional average current sharing Small thermally enhanced 20L 4 X 4mm MLPQ package RoHS compliant
APPLICATION CIRCUIT
12V
EAIN
20
19
18
17 CSIN+
CSIN-
EAIN
VCC
NC
16
RCS SW 15 14 13 12 11 CBST L
CCS
IOUT PSI DACIN
1 2 3 4 5
IOUT PSI DACIN LGND PHSOUT GATEL PHSIN NC CLKIN PGND
GATEH
VOUT+
IR3507
BOOST VCCL NC
COUT VOUT-
6
7
8
9
PHSIN PHSOUT CLKIN CVCCL
VCCL
Figure 1 Application Circuit
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NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
Order Quantity 3000 per reel 100 piece strips
ORDERING INFORMATION
Part Number IR3507MTRPBF * IR3507MPBF * Samples only Package 20 Lead MLPQ (4 x 4 mm body) 20 Lead MLPQ (4 x 4 mm body)
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Operating Junction Temperature…………….. 0 to 150oC Storage Temperature Range………………….-65oC to 150oC ESD Rating………………………………………HBM Class 1C JEDEC Standard MSL Rating………………………………………2 Reflow Temperature…………………………….260oC PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PIN NAME IOUT PSI DACIN LGND PHSIN NC PHSOUT CLKIN PGND GATEL NC VCCL BOOST GATEH SW VMAX 8V 8V 3.3V n/a 8V n/a 8V 8V 0.3V 8V n/a 8V 40V 40V 34V VMIN -0.3V -0.3V -0.3V n/a -0.3V n/a -0.3V -0.3V -0.3V -0.3V DC, -5V for 100ns n/a -0.3V -0.3V -0.3V DC, -5V for 100ns -0.3V DC, -5V for 100ns -0.3V -0.3V -0.3V -0.3V n/a ISOURCE 1mA 1mA 1mA n/a 1mA n/a 2mA 1mA 5A for 100ns, 200mA DC 5A for 100ns, 200mA DC n/a n/a 1A for 100ns, 100mA DC 3A for 100ns, 100mA DC 3A for 100ns, 100mA DC n/a 1mA 1mA 1mA n/a ISINK 1mA 1mA 1mA n/a 1mA n/a 2mA 1mA n/a 5A for 100ns, 200mA DC n/a 5A for 100ns, 200mA DC 3A for 100ns, 100mA DC 3A for 100ns, 100mA DC n/a 10mA 1mA 1mA 1mA n/a
16 VCC 34V 17 CSIN+ 8V 18 CSIN8V 19 EAIN 8V 20 NC n/a Note: 1. Maximum GATEH – SW = 8V 2. Maximum BOOST – GATEH = 8V
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NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
8.0V ≤ VCC ≤ 28V, 4.75V ≤ VCCL ≤ 7.5V, 0 oC ≤ TJ ≤ 125 oC. 0.5V ≤ V(DACIN) ≤ 1.6V, 500kHz ≤ CLKIN ≤ 9MHz, 250kHz ≤ PHSIN ≤1.5MHz
ELECTRICAL CHARACTERISTICS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions. Typical values represent the median values, which are related to 25°C. CGATEH = 3.3nF, CGATEL = 6.8nF (unless otherwise specified). PARAMETER Gate Drivers GATEH Source Resistance GATEH Sink Resistance GATEL Source Resistance GATEL Sink Resistance GATEH Source Current GATEH Sink Current GATEL Source Current GATEL Sink Current GATEH Rise Time GATEH Fall Time GATEL Rise Time GATEL Fall Time GATEL low to GATEH high delay GATEH low to GATEL high delay Disable Pull-Down Resistance Clock CLKIN Threshold CLKIN Bias Current CLKIN Phase Delay PHSIN Threshold PHSOUT Propagation Delay PHSIN Pull-Down Resistance PHSOUT High Voltage PHSOUT Low Voltage TEST CONDITION BOOST – SW = 7V. Note 1 BOOST – SW = 7V. Note 1 VCCL – PGND = 7V. Note 1 VCCL – PGND = 7V. Note 1 BOOST=7V, GATEH=2.5V, SW=0V. BOOST=7V, GATEH=2.5V, SW=0V. VCCL=7V, GATEL=2.5V, PGND=0V. VCCL=7V, GATEL=2.5V, PGND=0V. BOOST – SW = 7V, measure 1V to 4V transition time BOOST – SW = 7V, measure 4V to 1V transition time VCCL – PGND = 7V, Measure 1V to 4V transition time VCCL – PGND = 7V, Measure 4V to 1V transition time BOOST = VCCL = 7V, SW = PGND = 0V, measure time from GATEL falling to 1V to GATEH rising to 1V BOOST = VCCL = 7V, SW = PGND = 0V, measure time from GATEH falling to 1V to GATEL rising to 1V Note 1 MIN TYP 1.0 1.0 1.0 0.4 2.0 2.0 2.0 4.0 5 5 10 5 10 20 MAX 2.5 2.5 2.5 1.0 UNIT Ω Ω Ω Ω A A A A ns ns ns ns ns
10 10 20 10 40
10
20
40
ns
30
80
130
kΩ
Compare to V(VCCL) CLKIN = V(VCCL) Measure time from CLKIN1V Compare to V(VCCL) Measure time from CLKIN > (VCCL * 50% ) to PHSOUT > (VCCL *50%), 10pF Load @125oC
40 -0.5 40 35 4
45 0.0 75 50 15
57 0.5 125 55 35
% µA ns % ns
30 I(PHSOUT) = -10mA, measure VCCL – PHSOUT I(PHSOUT) = 10mA 1
100 0.6 0.4
170
kΩ V
1
V
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April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
MIN 42 -5 -5 20 TYP 52.5 0 -0.3 55 80 MAX 57 5 5 70 160 UNIT mV/ %DC mV µA ns ns
PARAMETER PWM Comparator PWM Ramp Slope Input Offset Voltage EAIN Bias Current Minimum Pulse Width Minimum GATEH Turn-off Time Current Sense Amplifier CSIN+/- Bias Current CSIN+/- Bias Current Mismatch Input Offset Voltage Gain Unity Gain Bandwidth Slew Rate Differential Input Range Differential Input Range Common Mode Input Range Rout at TJ = 25 oC Rout at TJ = 125 oC IOUT Source Current IOUT Sink Current Share Adjust Amplifier Input Offset Voltage Differential Input Range Gain Unity Gain Bandwidth PWM Ramp Floor Voltage Maximum PWM Ramp Floor Voltage Minimum PWM Ramp Floor Voltage PSI Comparator Rising Threshold Voltage Falling Threshold Voltage Hysteresis Resistance Floating Voltage
TEST CONDITION Vin=12V Note 1 0 ≤ EAIN ≤ 3V Note 1
Note 1 CSIN+ = CSIN- = DACIN. Measure input referred offset from DACIN 0.5V ≤ V(DACIN) < 1.6V C(IOUT)=10pF. Measure at IOUT. Note 1 0.8V ≤ V(DACIN) ≤ 1.6V, Note 1 0.5V ≤ V(DACIN) < 0.8V, Note 1 Note 1 Note 1
-200 -50 -1 30.0 4.8
0 0 0 32.5 6.8 6
200 50 1 35.0 8.8
nA nA mV V/V MHz V/µs mV mV V kΩ kΩ mA mA mV V V/V kHz mV mV mV
-10 -5 0 2.3 3.6 0.5 0.5 -3 -1 4 4 -116 120 -220
3.0 4.7 1.6 1.4 0 5.0 8.5 0 180 -160
50 50 Note2 3.7 5.4 2.9 2.9 3 1 6 17 116 240 -100
Note 1 Note 1 CSIN+ = CSIN- = DACIN. Note 1 Note 1 IOUT Open, Measure relative to DACIN IOUT = DACIN – 200mV. Measure relative to floor voltage. IOUT = DACIN + 200mV. Measure relative to floor voltage. Note 1 Note 1 Note 1
520 400 50 200 800
620 550 70 500
700 650 120 850 1150
mV mV mV kΩ mV
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IR3507PbF
MIN -300 -200 70 40 TYP -200 -100 105 65 MAX -110 -10 130 90 UNIT mV mV mV ns
PARAMETER Body Brake Comparator Threshold Voltage with EAIN decreasing Threshold Voltage with EAIN increasing Hysteresis Propagation Delay
TEST CONDITION Measure relative to Floor Voltage Measure relative to Floor Voltage
VCCL = 5V. Measure time from EAIN < V(DACIN) (200mV overdrive) to GATEL transition to < 4V.
OVP Comparator OVP Threshold
Step V(IOUT) up until GATEL drives high. Compare to V(VCCL) Propagation Delay V(VCCL)=5V, Step V(IOUT) up from V(DACIN) to V(VCCL). Measure time to V(GATEL)>4V. Synchronous Rectification Disable Comparator Threshold Voltage The ratio of V(CSIN-) / V(DACIN), below which V(GATEL) is always low. Negative Current Comparator Input Offset Voltage Note 1 Propagation Delay Time Apply step voltage to V(CSIN+) – V(CSIN-). Measure time to V(GATEL)< 1V. Bootstrap Diode Forward Voltage I(BOOST) = 30mA, VCCL = 6.8V Debug Comparator Threshold Voltage Compare to V(VCCL) General VCC Supply Current 8V ≤ V(VCC) < 10V VCC Supply Current 10V ≤ V(VCC) ≤ 16V VCCL Supply Current BOOST Supply Current 4.75V ≤ V(BOOST)-V(SW )≤ 8V DACIN Bias Current SW Floating Voltage
-1.0 15
-0.8 40
-0.4 70
V ns
66
75
86
%
-16 100
0 200
16 400
mV ns
360 -250 1.1 1.1 3.1 0.5 -1.5 0.1
520 -150 4.0 2.0 8.0 1.5 -0.75 0.3
960 -50 6.1 4 12.1 3 1 0.4
mV mV mA mA mA mA µA V
Note 1: Guaranteed by design, but not tested in production Note 2: VCCL-0.5V or VCC – 2.5V, whichever is lower
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NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
PIN DESCRIPTION
PIN# 1 PIN SYMBOL IOUT PIN DESCRIPTION Output of the Current Sense Amplifier is connected to this pin through a 3kΩ resistor. Voltage on this pin is equal to V(DACIN) + 33 [V(CSIN+) – V(CSIN-)]. Connecting all IOUT pins together creates a share bus which provides an indication of the average current being supplied by all the phases. The signal is used by the Control IC for voltage positioning and over-current protection. OVP mode is initiated if the voltage on this pin rises above V(VCCL)- 0.8V. Logic low is an active low (IE low=low power state). Reference voltage input from the Control IC. The Current Sense signal and PWM ramp is referenced to the voltage on this pin. Ground for internal IC circuits. IC substrate is connected to this pin. Phase clock input. N/A Phase clock output. Clock input. Return for low side driver and reference for GATEH non-overlap comparator. Low-side driver output and input to GATEH non-overlap comparator. N/A Supply for low-side driver. Internal bootstrap synchronous PFET is connected from this pin to the BOOST pin. Supply for high-side driver. Internal bootstrap synchronous PFET is connected between this pin and the VCCL pin. High-side driver output and input to GATEL non-overlap comparator. Return for high-side driver and reference for GATEL non-overlap comparator. Supply for internal IC circuits. Non-Inverting input to the current sense amplifier, and input to debug comparator. Inverting input to the current sense amplifier, and input to synchronous rectification disable comparator. PWM comparator input from the error amplifier output of Control IC. Body Braking mode is initiated if the voltage on this pin is less than V(DACIN). N/A
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
PSI DACIN LGND PHSIN NC PHSOUT CLKIN PGND GATEL NC VCCL BOOST GATEH SW VCC CSIN+ CSINEAIN NC
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NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
SYSTEM THEORY OF OPERATION
System Description The system consists of one control IC and a scalable array of phase converters, each requiring one phase IC. The control IC communicates with the phase ICs using three digital buses, i.e., CLOCK, PHSIN, PHSOUT and three analog buses, i.e., DAC, EA, IOUT. The digital buses are responsible for switching frequency determination and accurate phase timing control without any external component. The analog buses are used for PWM control and current sharing among interleaved phases. The control IC incorporates all the system functions, i.e., VID, CLOCK signals, error amplifier, fault protections, current monitor, etc. The Phase IC implements the functions required by the converter of each phase, i.e., the gate drivers, PWM comparator and latch, over-voltage protection, phase disable circuit, current sensing and sharing, etc. PWM Control Method The PWM block diagram of the XPhase3TM architecture is shown in Figure 1. Feed-forward voltage mode control with trailing edge modulation is used. A high-gain wide-bandwidth voltage type error amplifier in the Control IC is used for the voltage control loop. Input voltage is sensed by the phase ICs and feed-forward control is realized. The feed-forward control compensates the ramp slope based on the change in input voltage. The input voltage can change due to variations in the silver box output voltage or due to the wire and PCB-trace voltage drop related to changes in load current.
GATE DRIVE VOLTAGE
VIN PHSOUT
CONTROL IC
CLOCK GENERATOR CLKOUT
PHASE IC
CLKIN
CLK Q D 1 2 RESET DOMINANT D Q
VCC VCCH GATEH VID6 OFF SW
COUT CBST
PHSOUT PHSIN
PHSIN
VOSNS+ VOUT
PWM COMPARATOR EAIN
CLK Q + R
DFFRH
VCCL GND GATEL VID6 OFF PGND VOSNS-
PWM LATCH VID6 VO VDAC LGND SHARE ADJUST ERROR AMPLIFIER IOUT
RCOMP RFB1 RFB + 2 +
REMOTE SENSE AMPLIFIER
ENABLE
RAMP DISCHARGE CLAMP
BODY BRAKING COMPARATOR
+
EAOUT
3K
+
FB
RVSETPT
CCOMP
CFB
DACIN PHSOUT
RDRP
RDRP1
IROSC IVSETPT
VSETPT
CDRP
PHASE IC
CLKIN
CLK Q D 1 RESET DOMINANT U248 D Q
IMON VDAC
PHSIN VDRP AMP Thermal Compensation
+
VDRP VN
RTHRM
PWM COMPARATOR EAIN
ENABLE
VID6 OFF SW VCCL GATEL VID6 OFF
+ -
CLK Q + R
DFFRH
PWM LATCH VID6
+
IIN
RAMP DISCHARGE CLAMP
BODY BRAKING COMPARATOR
SHARE ADJUST ERROR AMPLIFIER ISHARE 3K VID6 VID6
+
-
CURRENT SENSE AMPLIFIER CSIN+
+ +
VID6 VID6 + DACIN
Figure 1: PWM Block Diagram
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-
VID6 VID6 +
+
ERROR AMPLIFIER
-
-
+
VDAC
+ -
-
-
+
-
-
+
-
PSI
PSI
-
VID6 VID6
+
CURRENT SENSE AMPLIFIER
CSIN+
CCS RCS
CSIN-
VCC VCCH GATEH
CBST
PGND
PSI
PSI
CCS RCS
CSIN-
April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
Frequency and Phase Timing Control The oscillator is located in the Control IC and the system clock frequency is programmable from 250kHz to 9MHZ by an external resistor. The control IC system clock signal (CLKOUT) is connected to CLKIN of all the phase ICs. The phase timing of the phase ICs is controlled by the daisy chain loop, where control IC phase clock output (PHSOUT) is connected to the phase clock input (PHSIN) of the first phase IC, and PHSOUT of the first phase IC is connected to PHSIN of the second phase IC, etc. and PHSOUT of the last phase IC is connected back to PHSIN of the control IC. During power up, the control IC sends out clock signals from both CLKOUT and PHSOUT pins and detects the feedback at PHSIN pin to determine the phase number and monitor any fault in the daisy chain loop. Figure 2 shows the phase timing for a four phase converter. The switching frequency is set by the resistor ROSC. The clock frequency equals the number of phase times the switching frequency.
Control IC CLKOUT (Phase IC CLKIN) Control IC PHSOUT (Phase IC1 PHSIN) Phase IC1 PWM Latch SET Phase IC 1 PHSOUT (Phase IC2 PHSIN) Phase IC 2 PHSOUT (Phase IC3 PHSIN) Phase IC 3 PHSOUT (Phase IC4 PHSIN) Phase IC4 PHSOUT (Control IC PHSIN)
Figure 2: Four Phase Oscillator Waveforms PWM Operation The PWM comparator is located in the phase IC. Upon receiving the falling edge of a clock pulse, the PWM latch is set; the PWMRMP voltage begins to increase; the low side driver is turned off, and the high side driver is then turned on after the non-overlap time. When the PWMRMP voltage exceeds the error amplifier’s output voltage, the PWM latch is reset. This turns off the high side driver and then turns on the low side driver after the non-overlap time; it activates the ramp discharge clamp, which quickly discharges the PWMRMP capacitor to the output voltage of share adjust amplifier in phase IC until the next clock pulse. The PWM latch is reset dominant allowing all phases to go to zero duty cycle within a few tens of nanoseconds in response to a load step decrease. Phases can overlap and go up to 100% duty cycle in response to a load step increase with turn-on gated by the clock pulses. An error amplifier output voltage greater than the common mode input range of the PWM comparator results in 100% duty cycle regardless of the voltage of the PWM ramp. This arrangement guarantees the error amplifier is always in control and can demand 0 to 100% duty cycle as required. It also favors response to a load step decrease, which is appropriate given the low output to input voltage ratio of most systems. The inductor current will increase much more rapidly than decrease in response to load transients. The error amplifier is a high speed amplifier with 110 dB of open loop gain. It is not unity gain stable. This control method is designed to provide “single cycle transient response” where the inductor current changes in response to load transients within a single switching cycle maximizing the effectiveness of the power train and minimizing the output capacitor requirements.
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NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
An additional advantage of the architecture is that differences in ground or input voltage at the phases have no effect on operation since the PWM ramps are referenced to VDAC. Figure 3 depicts PWM operating waveforms under various conditions.
PHASE IC CLOCK PULSE
EAIN PWMRMP VDAC
GATEH
GATEL
STEADY-STATE OPERATION
DUTY CYCLE INCREASE DUE TO LOAD INCREASE
DUTY CYCLE DECREASE DUE TO VIN INCREASE (FEED-FORWARD)
DUTY CYCLE DECREASE DUE TO LOAD DECREASE (BODY BRAKING) OR FAULT (VCCLUV, OCP, VID=11111X)
STEADY-STATE OPERATION
Figure 3: PWM Operating Waveforms Body Braking
TM
In a conventional synchronous buck converter, the minimum time required to reduce the current in the inductor in response to a load step decrease is;
TSLEW = L * ( I MAX − I MIN ) VO
The slew rate of the inductor current can be significantly increased by turning off the synchronous rectifier in response to a load step decrease. The switch node voltage is then forced to decrease until conduction of the synchronous rectifier’s body diode occurs. This increases the voltage across the inductor from Vout to Vout + VBODYDIODE. The minimum time required to reduce the current in the inductor in response to a load transient decrease is now;
TSLEW = L * ( I MAX − I MIN ) VO + VBODYDIODE
Since the voltage drop in the body diode is often comparable to the output voltage, the inductor current slew rate can be increased significantly. This patented technique is referred to as “body braking” and is accomplished through the “body braking comparator” located in the phase IC. If the error amplifier’s output voltage drops below the output voltage of the share adjust amplifier in the phase IC, this comparator turns off the low side gate driver. Lossless Average Inductor Current Sensing Inductor current can be sensed by connecting a series resistor and a capacitor network in parallel with the inductor and measuring the voltage across the capacitor, as shown in Figure 4. The equation of the sensing network is,
1 RL + sL = iL ( s) 1 + sRCS CCS 1 + sRCS CCS
vC ( s) = vL ( s)
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IR3507PbF
Usually the resistor Rcs and capacitor Ccs are chosen so that the time constant of Rcs and Ccs equals the time constant of the inductor which is the inductance L over the inductor DCR (RL). If the two time constants match, the voltage across Ccs is proportional to the current through L, and the sense circuit can be treated as if only a sense resistor with the value of RL was used. The mismatch of the time constants does not affect the measurement of inductor DC current, but affects the AC component of the inductor current. vL iL L RCS
Current Sense Amp
RL CCS
c vCS
VO CO
CSOUT Figure 4: Inductor Current Sensing and Current Sense Amplifier The advantage of sensing the inductor current versus high side or low side sensing is that actual output current being delivered to the load is obtained rather than peak or sampled information about the switch currents. The output voltage can be positioned to meet a load line based on real time information. Except for a sense resistor in series with the inductor, this is the only sense method that can support a single cycle transient response. Other methods provide no information during either load increase (low side sensing) or load decrease (high side sensing). An additional problem associated with peak or valley current mode control for voltage positioning is that they suffer from peak-to-average errors. These errors will show in many ways but one example is the effect of frequency variation. If the frequency of a particular unit is 10% low, the peak to peak inductor current will be 10% larger and the output impedance of the converter will drop by about 10%. Variations in inductance, current sense amplifier bandwidth, PWM prop delay, any added slope compensation, input voltage, and output voltage are all additional sources of peak-to-average errors. Current Sense Amplifier A high speed differential current sense amplifier is located in the phase IC, as shown in Figure 4. Its gain is nominally 32.5, and the 3850 ppm/ºC increase in inductor DCR should be compensated in the voltage loop feedback path. The current sense amplifier can accept positive differential input up to 50mV and negative up to -10mV before clipping. The output of the current sense amplifier is summed with the DAC voltage and sent to the control IC and other phases through an on-chip 3KΩ resistor connected to the IOUT pin. The IOUT pins of all the phases are tied together and the voltage on the share bus represents the average current through all the inductors and is used by the control IC for voltage positioning and current limit protection. The input offset of this amplifier is calibrated to +/- 1mV in order to reduce the current sense error. The input offset voltage is the primary source of error for the current share loop. In order to achieve very small input offset error and superior current sharing performance, the current sense amplifier continuously calibrates itself. This calibration algorithm creates ripple on IOUT bus with a frequency of fsw/(32*28) in a multiphase architecture. Average Current Share Loop Current sharing between phases of the converter is achieved by the average current share loop in each phase IC. The output of the current sense amplifier is compared with the average current at the share bus. If current in a phase is smaller than the average current, the share adjust amplifier of the phase will pull down the starting point of the PWM ramp thereby increasing its duty cycle and output current; if current in a phase is larger than the average current, the share adjust amplifier of the phase will pull up the starting point of the PWM ramp thereby decreasing its duty cycle and output current. The current share amplifier is internally compensated so that the crossover frequency of the current
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IR3507PbF
share loop is much slower than that of the voltage loop and the two loops do not interact. For proper current sharing the output of current sense amplifier should note exceed (VCCL-1.4V) under all operating condition.
IR3507 THEORY OF OPERATION
Block Diagram The Block diagram of the IR3507 is shown in Figure 5, and specific features are discussed in the following sections.
CLKIN
CLK Q D Q_100%DUTY -
PHSOUT GATEH DRIVER
RMPOUT 200mV
S
PHSIN EAIN
EAIN
PWM LATCH PWM COMPARATOR
+ D Q PWM_CLK CLK Q RESET DOMINANT . . Q_100%DUTY . . R PWMQ
+
BOOST GATEH GATEH NONGATEH NONOVERLAP OVERLAP LATCH COMPARATOR
Q S + SET R DOMINANT
100% DUTY LATCH
PWMQ PWM_CLK D CLK Q
SW
RMPOUT PHSIN
VCCL PWM RESET
VCC
VCC CALIBRATION DACIN-SHARE_ADJ
PWM RAMP GENERATOR
Q
D CLK R
GATEL NONOVERLAP LATCH
Q S
1V GATEL NONOVERLAP COMPARATOR 1V
+ + -
BODY BRAKING COMPARATOR
EAIN +
ANTI-BIAS LATCH
SET R DOMINANT
DACIN +
SHARE_ADJ
100mV 200mV OVP COMPARATOR
VCCL
-
NEGATIVE CURRENT LATCH
Q R S
GATEL DRIVER
VCCL GATEL PGND 0.15V
+
0.8V
DEBUG OFF (LOW=OPEN)
+ RESET DOMINANT
SYNCHRONOUS RECTIFICATION DISABLE COMPARATOR CURRENT SENSE AMPLIFIER
X32.5 +
SHARE ADJUST AMPLIFIER 3K
+ -
-
CSAOUT
+
DEBUG COMPARATOR
+ + IROSC DACIN
X 0.75
CALIBRATION
CALIBRATION
DACIN LGND
PSI ASSERT
1V
8CLK
Q D CLK R
Q
D CLK
VCCL
IROSC
VCCL PHSIN
PSI COMPARATOR
+
R
(CLKIN IF 1-PHASE)
620mV 550mV
Figure 5: Block diagram Tri-State Gate Drivers The gate drivers can deliver up to 2A peak current (4A sink current for bottom driver). An adaptive non-overlap circuit monitors the voltage on the GATEH and GATEL pins to prevent MOSFET shoot-through current while minimizing body diode conduction. The non-overlap latch is added to eliminate the error triggering caused by the switching noise. An enable signal is provided by the control IC to the phase IC without the addition of a dedicated signal line. The error amplifier output of the control IC drives low in response to any fault condition such as VCCL under voltage or output overload. The IR3507 Body BrakingTM comparator detects this and drives bottom gate output low. This tri-state operation prevents negative inductor current and negative output voltage during powerdown.
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-
IOUT
NEGATIVE CURRENT COMPARATOR
CSINCSIN+
500K PSI
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
A synchronous rectification disable comparator is used to detect converter CSIN- pin voltage, which represents local converter output voltage. If the voltage is below 75% of VDAC and negative current is detected, GATEL drives low, which disables synchronous rectification and eliminates negative current during power-up. The gate drivers pull low if the supply voltages are below the normal operating range. An 80kΩ resistor is connected across the GATEH/GATEL and PGND pins to prevent the GATEH/GATEL voltage from rising due to leakage or other causes under these conditions. PWM Ramp Every time the phase IC is powered up PWM ramp magnitude is calibrated to generate a 52.5 mV/% ramp for a VCC=12V. For example, for a 15 % duty ratio the ramp amplitude is 750mV for VCC=12V. Feed-forward control is achieved by varying the PWM ramp proportionally with VCC voltage after calibration. In response to a load step-up the error amplifier can demand 100 % duty cycle. In order to avoid pulse skipping under this scenario and allow the BOOST cap to replenish, a minimum off time is allowed in this mode of operation. As shown in Figure 6, 100 % duty is detected by comparing the PWM latch output (PWMQ) and its input clock (PWM_CLK). If the PWMQ is high when the PWM_CLK is asserted the TopFET turnoff is initiated. The TopFET is again turned on once the RMPOUT drops within 200 mV of the VDAC.
NORMAL OPERATION 100 % DUTY OPERATION
CLKIN
PHSIN (2 Phase Design)
EAIN
RMPOUT
VDAC
VDAC+200mV
PWMQ
80ns
Figure 6: PWM Operation during normal and 100 % duty mode. Power State Indicator (PSI) function From a system perspective, the PSI input is controlled by the system and is forced low when the load current is lower than a preset limit and forced high when load current is higher than the preset limit. IR3507 can accept an active low signal on its PSI input and force the drivers into tri-state, effectively forcing the phase IC into off state. As shown in Figure 7, once the PSI assert signal is received the IC waits for eight PHSIN pulses before forcing the drivers into tri-state. This delay is required to prevent the IC from responding to any high frequency PSI input. The de-assertion of the PSI input is succeeded by an increase in the load current. In order to prevent excess discharging of the output capacitors and reduction in the circulating sinking current between phases, the IC makes sure that the topFET is turned on first during de-assertion. This is achieved with the help of an Anti-Bias TM circuitry. Irrespective of the PSI input, the IOUT bus remains connected to current share bus of the system. The PSI circuit is disabled during power up while the output voltage is below 0.75*VDAC. The maximum PSI de-assert delay is determined by the CLKIN period.
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NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
PSI DE-ASSERT
PSI ASSERT PHSIN
PSI
ANTI-BIAS LATCH ENSURES GATEH TURNS ON FIRST
GATEH
GATEL
Figure 7: PSI assertion and De-assertion Debugging Mode If CSIN+ pin is pulled up to VCCL voltage, IR3507 enters into debugging mode. Both drivers are pulled low and IOUT output is disconnected from the current share bus, which isolates this phase IC from other phases. However, the phase timing from PHSIN to PHSOUT does not change. Emulated Bootstrap Diode IR3507 integrates a PFET to emulate the bootstrap diode. If two or more top MOSFETs are to be driven at higher switching frequency, an external bootstrap diode connected from VCCL pin to BOOST pin may be needed.
OUTPUT VOLTAGE (VO)
OVP THRESHOLD
130mV
VCCL-800 mV
IOUT(ISHARE)
GATEH (PHASE IC)
GATEL (PHASE IC)
FAULT LATCH ERROR AMPLIFIER OUTPUT (EAOUT)
VDAC
NORMAL OPERATION
OVP CONDITION
AFTER OVP
Figure 8: Over-voltage protection waveforms
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IR Confidential
April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
Over Voltage Protection (OVP) The IR3507 includes over-voltage protection that turns on the low side MOSFET to protect the load in the event of a shorted high-side MOSFET, converter out of regulation, or connection of the converter output to an excessive output voltage. As shown in Figure 6, if IOUT pin voltage is above V(VCCL) – 0.8V, which represents over-voltage condition detected by control IC, the over-voltage latch is set. GATEL drives high and GATEH drives low. The OVP circuit overrides the normal PWM operation and within approximately 150ns will fully turn-on the low side MOSFET, which remains ON until IOUT drops below V(VCCL) – 0.8V when over voltage ends. The over voltage fault is latched in control IC and can only be reset by cycling the power to control IC. The error amplifier output (EAIN) is pulled down by control IC and will remain low. The lower MOSFETs alone can not clamp the output voltage however an SCR or N-MOSFET could be triggered with the OVP output to prevent processor damage. Operation at Higher Output Voltage The proper operation of the phase IC is ensured for output voltage up to 5.1V. Similarly, the minimum VCC for proper operation of the phase IC is 8 V. Below this voltage, the current sharing performance of the phase IC is affected.
DESIGN PROCEDURES - IR3507
Inductor Current Sensing Capacitor CCS and Resistor RCS The DC resistance of the inductor is utilized to sense the inductor current. Usually the resistor RCS and capacitor CCS in parallel with the inductor are chosen to match the time constant of the inductor, and therefore the voltage across the capacitor CCS represents the inductor current. If the two time constants are not the same, the AC component of the capacitor voltage is different from that of the real inductor current. The time constant mismatch does not affect the average current sharing among the multiple phases, but does effect the current signal IOUT as well as the output voltage during the load current transient if adaptive voltage positioning is adopted. Measure the inductance L and the inductor DC resistance RL. Pre-select the capacitor CCS and calculate RCS as follows. L RL (1) RCS = C CS Bootstrap Capacitor CBST Depending on the duty cycle and gate drive current of the phase IC, a capacitor in the range of 0.1uF to 1uF is needed for the bootstrap circuit. Decoupling Capacitors for Phase IC A 0.1uF-1uF decoupling capacitor is required at the VCCL pin. CURRENT SHARE LOOP COMPENSATION The internal compensation of current share loop ensures that crossover frequency of the current share loop is at least one decade lower than that of the voltage loop so that the interaction between the two loops is eliminated. The crossover frequency of current share loop is approximately 8 kHz.
Page 14 of 19
IR Confidential
April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the PCB layout; therefore, minimizing the noise coupled to the IC. • Dedicate at least one middle layer for a ground plane. • Separate analog bus (EAIN, DACIN, and IOUT) from digital bus (CLKIN, PSI, PHSIN, and PHSOUT) to reduce the noise coupling. • Connect PGND to LGND pins of each phase IC to the ground tab, which is tied to PGND planes respectively through vias. • Place current sense resistors and capacitors (RCS and CCS) close to phase IC. Use Kelvin connection for the inductor current sense wires, but separate the two wires by ground polygon or as differential routing. The wire from the inductor terminal to CSIN- should not cross over the fast transition nodes, i.e., switching nodes, gate drive outputs, and bootstrap nodes. • Place the decoupling capacitors CVCC and CVCCL as close as possible to VCC and VCCL pins of the phase IC respectively. • Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and inductance of the gate drive paths. • Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET. Use combination of different packages of ceramic capacitors. • There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor, output capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for connections between layers.
Page 15 of 19
IR Confidential
April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
PCB Metal and Component Placement • Lead land width should be equal to nominal part lead width. The minimum lead to lead spacing should be ≥ 0.2mm to minimize shorting. • Lead land length should be equal to maximum part lead length + 0.3 mm outboard extension + 0.05mm inboard extension. The outboard extension ensures a large and inspectable toe fillet, and the inboard extension will accommodate any part misalignment and ensure a fillet. • Center pad land length and width should be equal to maximum part pad length and width. However, the minimum metal to metal spacing should be ≥ 0.17mm for 2 oz. Copper (≥ 0.1mm for 1 oz. Copper and ≥ 0.23mm for 3 oz. Copper) • Four 0.3mm diameter vias shall be placed in the pad land spaced at 1.2mm, and connected to ground to minimize the noise effect on the IC and to transfer heat to the PCB. • No PCB traces should be routed nor vias placed under any of the 4 corners of the IC package. Doing so can cause the IC to rise up from the PCB resulting in poor solder joints to the IC leads.
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IR Confidential
April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
Solder Resist • The solder resist should be pulled away from the metal lead lands and center pad by a minimum of 0.06mm. The solder resist mis-alignment is a maximum of 0.05mm and it is recommended that the lead lands are all Non Solder Mask Defined (NSMD). Therefore, pulling the S/R 0.06mm will always ensure NSMD pads. • The minimum solder resist width is 0.13mm. At the inside corner of the solder resist where the lead land groups meet, it is recommended to provide a fillet so a solder resist width of ≥ 0.17mm remains. • Ensure that the solder resist in-between the lead lands and the pad land is ≥ 0.15mm due to the high aspect ratio of the solder resist strip separating the lead lands from the pad land. • The 4 vias in the land pad should be tented with solder resist 0.4mm diameter, or 0.1mm larger than the diameter of the via.
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IR Confidential
April 2, 2009
NOT RECOMMENDED FOR NEW DESIGNS REPLACEMENT PRODUCT – IR3507ZPBF
IR3507PbF
Stencil Design • The stencil apertures for the lead lands should be approximately 80% of the area of the lead lands. Reducing the amount of solder deposited will minimize the occurrence of lead shorts. Since for 0.5mm pitch devices the leads are only 0.25mm wide, the stencil apertures should not be made narrower; openings in stencils < 0.25mm wide are difficult to maintain repeatable solder release. • The stencil lead land apertures should therefore be shortened in length by 80% and centered on the lead land. • The land pad aperture should be striped with 0.25mm wide openings and spaces to deposit approximately 50% area of solder on the center pad. If too much solder is deposited on the center pad the part will float and the lead lands will be open. • The maximum length and width of the land pad stencil aperture should be equal to the solder resist opening minus an annular 0.2mm pull back to decrease the incidence of shorting the center land to the lead lands when the part is pushed into the solder paste.
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IR Confidential
April 2, 2009
IR3507PbF
PACKAGE INFORMATION
20L MLPQ (4 x 4 mm Body) – θJA = 32oC/W, θJC = 3oC/W
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.
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April 2, 2009