IR4007K

IR4007K

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IR4007K - Switched Mode Power Supply IC - International Rectifier

  • 详情介绍
  • 数据手册
  • 价格&库存
IR4007K 数据手册
ADVANCE INFORMATION Data SheetNo. PD60183 IR4007K Switched Mode Power Supply IC Descriptions The IR4007 is a dual mode voltage and current controller combined with a MOSFET in a single Package. The IR4007 is designed for use in AC/DC and DC/DC switching power supplies upto 100VDC nominal input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation. Features • Primary current mode control, and secondary • Vcc Over-voltage protection (latched) • Over-current & over-temperature protection • Quasi resonant, variable frequency operation • 5 pin TO262 package • 0.4Ω Rds(on) max/ 200V MOSFET • Fully Characterized Avalanche Energy voltage mode control Typical Connection Diagram Vin (AC/ DC) Vout (DC) 3 Drain Vcc 4 IR4007K FB Source Gnd 5 1 2 *Please note that this datasheet contains advance information which could change before the product is released to production. www.irf.com 1 IR4007 ADVANCE INFORMATION Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak IDmax EAS VCC VTH P D1 P D2 RthJC TJ TS Tf TOP TL Definition Peak drain current Maximum switching current Single pulse avalanche energy Power supply voltage OCP/FB terminal voltage Power dissipation for MOSFET Power dissipation for control part (MIC) Thermal resistance, junction to case Junction temperature Storage temperature Internal frame temperature in operation Ambient operating temperature Lead temp. (soldering, 10 seconds) Terminals 3-1 3-1 3-1 4-3 5-2 3-1 4-2 — — — — — — Max. Ratings 20 5.0 100 35 6 TBA TBA 0.8 1.7 -55-150 -40-125 -20-125 -20-125 300 Units A mJ Note Single pulse V2-3 = 0.78V Tc=25oC Vdd=50V,L=10mH, Tc=25oC V With infinite heatsink W Without heatsink Specified by VIN x IIN °C/W °C Refer to recommended operating temperature Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the VDCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth(2) VOCP/FB Tth(2) ≥1.0µs Vth(2) 2 www.irf.com ADVANCE INFORMATION IR4007 Electrical Characteristics (for Control IC) VCC = 18V, (TA = 25 °C) unless otherwise specified. Symbol VCCUV+ VCCUVIQCCUV IQCC TOFF/(MAX) TTH(2) TOFF/(MIN) VTH(1) VTH(2) IOCP/FB VCC(OVP) ICC(LA) VCC(LaOFF) TJ(TSD) Definition VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold UVLO mode quiescent current Quiescent operating VCC supply current Maximum OFF time Minimum input pulse width for quasi resonant signals Minimum OFF time OCP/FB terminal threshold voltage 1 OCP/FB terminal threshold voltage 2 OCP/FB terminal sink current VCC overvoltage protection limit Latch circuit holding current Latch circuit reset voltage Thermal shutdown activation temperature Min. Typ. Max. Units Test Conditions 14.4 9 — — 45 — — 0.68 1.3 1.2 20.5 — 6.6 140 16 10 — — — — — 0.73 1.45 1.35 22.5 — — — 17.6 11 100 30 55 1.0 1.5 0.78 1.6 1.5 24.5 400 8.4 — V mA V µA V oC V µA mA µsec VCC < VCCUV+ Electrical Characteristics (for MOSFET) (TA = 25°C) unless otherwise specified. Symbol VDSS IDSS RDS(ON) tr THj-C Definition Drain-to-source breakdown voltage Drain leakage current On-resistance Rise time (10% to 90%) Thermal resistance Min. Typ. Max. Units Test Conditions 200 — — — — — — — — — — 250 0.4 200 1.7 V µA Ω ns oC/W Vds=160V, VCC=0V Tj =125oC V3-1=10V, ID=5A Between junction and case www.irf.com 3 IR4007 Block Diagram 4 Vcc ADVANCE INFORMATION 3 START O.V.P LATCH D REG. DRIVE 1 T.S.D OSCILLATOR S Vth(1) + Comp.1 5 OCP/ FB + Comp.2 Vth(2) 2 Ground Lead Assignments Pin # S y m b o l 1 S Description MOSFET Source terminal 2 Ground Ground terminal 3 D MOSFET Drain terminal 4 1 2 3 4 5 5 Vcc Control circuit supply volta g e OCP/FB Overcurrent detection, and Volta g e mode control feedback si g nal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit 4 www.irf.com ADVANCE INFORMATION IR4007 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 10/19/2000 www.irf.com 5
IR4007K
1. 物料型号:IR4007K,由International Rectifier生产。

2. 器件简介: - IR4007是一款集成了MOSFET的双模式电压和电流控制器,用于AC/DC和DC/DC开关电源,最高输入电压可达100VDC。 - 设计用于准谐振或脉冲比控制(PRC)模式,实现变频操作。

3. 引脚分配: - 1号引脚:S(MOSFET源极) - 2号引脚:GND(地) - 3号引脚:D(MOSFET漏极) - 4号引脚:Vcc(控制电路供电电压) - 5号引脚:OCP/FB(过流检测和电压模式控制反馈信号)

4. 参数特性: - 峰值漏极电流(Iopeak):20A(单脉冲) - 最大开关电流(Iomax):5.0A(V2-3=0.78V,Tc=25°C) - 单脉冲雪崩能量(EAS):100mJ(Vdd=50V,L=10mH,Tc=25°C) - 供电电压(Vcc):35V - MOSFET的漏源导通电阻(Rds(on))最大值为0.4Ω

5. 功能详解: - 具有Vcc过压保护(锁定)、过流和过温保护。 - 支持准谐振、变频操作。 - 采用5引脚TO262封装。 - 完全表征的雪崩能量。

6. 应用信息: - 适用于AC/DC和DC/DC开关电源。

7. 封装信息: - 采用5引脚TO262封装。
IR4007K 价格&库存

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